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1.
Through improved synthesis process, resistance reduction effect of (K0.5Bi0.5)TiO3 (KBT) doping in Y–Mn co-doped BaTiO3 (BT) lead free ceramics was investigated. By different doping methods (doping K2O, Bi2O3 and TiO2 or synthesized KBT), medium Curie temperature (around 130 °C) lead free BT ceramics were obtained with ultra-low resistivity (13.84 Ωcm) with a temperature maintaining process at 700 °C. In this contribution, effect of sintering process and doping methods is discussed in detail. 相似文献
2.
Three N-heteroleptic Pt(II) complexes, [Pt(C^C)(O^O)] [O^O = acetylacetonate, C^C = 1-phenyl-1,2,4-triazol-5-ylidene (1), C^C = 4-phenyl-1,2,4-triazol-5-ylidene (2), C^C = 2-phenylpyrazine (3)] have been investigated with density functional theory (DFT) and time-dependent density functional theory (TDDFT). The radiative decay rate constants of complexes 1–3 have been discussed with the oscillator strength (fn), the strength of spin–orbit coupling (SOC) interaction between the lowest energy triplet excited state (T1) and singlet excited states (Sn), and the energy gaps between E(T1) and E(Sn). To illustrate the nonradiative decay processes, the transition states between triplet metal-centered (3MC) and T1 states have been optimized and were verified with the calculations of vibrational frequencies and intrinsic reaction coordinate (IRC). In addition, the minimum energy crossing points (MECPs) between 3MC and ground states (S0) were optimized. At last, the potential energy curves relevant to the nonradiative decay pathways are simulated. The results show that complex 3 has the biggest photoluminescence quantum yield because the complex 3 has the biggest radiative decay rate constant and the smallest nonradiative decay rate constant in complexes 1–3. 相似文献
3.
Kai Xu Zhenchang Tang Yan Zhang Wanshu Li Haiou Li Lihui Wang Liming Liu Honghang Wang Feng Chi Xiaowen Zhang 《Current Applied Physics》2019,19(10):1076-1081
Germanium dioxide (GeO2) aqueous solutions are facilely prepared and the corresponding anode buffer layers (ABLs) with solution process are demonstrated. Atomic force microscopy, X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy measurements show that solution-processed GeO2 behaves superior film morphology and enhanced work function. Using GeO2 as ABL of organic light-emitting diodes (OLEDs), the visible device with tris(8-hydroxy-quinolinato)aluminium as emitter gives maximum luminous efficiency of 6.5 cd/A and power efficiency of 3.5 lm/W, the ultraviolet device with 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole as emitter exhibits short-wavelength emission with peak of 376 nm, full-width at half-maximum of 42 nm, maximum radiance of 3.36 mW/cm2 and external quantum efficiency of 1.5%. The performances are almost comparable to the counterparts with poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) as ABL. The current, impedance, phase and capacitance as a function of voltage characteristics elucidate that the GeO2 ABL formed from appropriate concentration of GeO2 aqueous solution favors hole injection enhancement and accordingly promoting device performance. 相似文献
4.
Ben-Jye Chang 《Telecommunication Systems》2006,33(4):333-352
3G Wideband CDMA systems adopt the Orthogonal Variable Spreading Factor code tree as the channelization codes management for
achieving high data rate transmission in personal multimedia communications. It assigns a single channelization code for each
accepted connection. Nevertheless, it wastes the system capacity when the required rate is not powers of two of the basic
rate. One good solution is to assign multiple codes for each accepted connection but it causes two inevitable drawbacks: long
handoff delay and new call setup delay due to high complexity of processing with multiple channelization codes, and high cost
of using more number of rake combiners. Especially, long handoff delay may result in more call dropping probability and higher
Grade of Service, which will degrade significantly the utilization and revenue of the 3G cellular systems. Therefore, we propose
herein an adaptive efficient codes determination algorithm based on the Markov Decision Process analysis approach to reduce
the waste rate and reassignments significantly while providing fast handoff. Numerical results demonstrate that the proposed
approach yields several advantages, including the lowest GOS, the least waste rate, and the least number of reassignments.
Meanwhile, the optimal number of rake combiners is also analyzed in this paper.
This research was supported in part by the National Science Council of Taiwan, ROC, under contract NSC-93-2213-E-324-018. 相似文献
5.
表面贴装工艺流程的关键工序之一就是焊膏印刷,其工艺控制的好坏直接影响着装配的线路板的质量。通过对印刷工艺参数的分析,利用试验设计的方法来找出关键工艺参数,并加以优化设定,从而为控制工序参数奠定基础。 相似文献
6.
7.
Modeling ion implantation of HgCdTe 总被引:2,自引:0,他引:2
H. G. Robinson D. H. Mao B. L. Williams S. Holander-Gleixner J. E. Yu C. R. Helms 《Journal of Electronic Materials》1996,25(8):1336-1340
Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction
is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant
doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by
Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T
by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution
depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released,
they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results
of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing
conditions, including implant dose, annealing temperature, and doping background. 相似文献
8.
LDD方法在提高电路工作电压中的应用研究 总被引:1,自引:0,他引:1
研究了利用轻掺杂漏结构来制作高电源电压器件的工艺方法。分析了LDD结构参数对器件击穿特性的影响,并结合实验结果对N^-区的注入剂量,长度及引入的串联电阻进行了优化设计。 相似文献
9.
NMOS器件两次沟道注入杂质分布和阈电压计算 总被引:1,自引:1,他引:0
分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂地系数,给出了表面浓度与工艺参数之间的模拟关系式,以峰值浓度为强反型条件计算了开启电压,文章还给出了开启电压、氧化条件、不同注入组合之间的关系式。 相似文献
10.
Summary Experiments and simulations prove that correlation chromatography can greatly reduce the disadvantage of a non-linear response of the chromatographic column. A factor that has been accepted as being an important source of error in correlation or multiplex chromatography, has been shown not to be. Separations affected, improve dramatically when correlation chromatography is used, and a substantial amount of correlation noise only arises when there is a large difference in separation between a conventional chromatogram and a correlogram.A model has been developed for simulating these nonlinearities. It is shown that, especially for correlation chromatography, the simulation results match the practical measurements very well. 相似文献