IRS辅助的SWIPT系统中基于能效优先的波束成形设计与优化

以智能反射面(intelligent reflecting surface,IRS)辅助的无线携能通信(simultaneous wireless information and power transfer,SWIPT)系统为背景,研究了该系统中基于能效优先的多天线发送端有源波束成形与IRS无源波束成形联合设计与优化方法。以最大化接收端的最小能效为优化目标,构造在发送端功率、接收端能量阈值、IRS相移等多约束下的非线性优化问题,用交替方向乘子法(alternating direction method of multipliers,ADMM)求解。采用Dinkelbach算法转化目标函数,通过奇异值分解(singular value decomposition,SVD)和半定松弛(semi-definite relaxation,SDR)得到发送端有源波束成形向量。采用SDR得到IRS相移矩阵与反射波束成形向量。结果表明,该系统显著降低了系统能量收集(energy harvesting,EH)接收端的能量阈值。当系统总电路功耗为?15 dBm时,所提方案的用户能效为300 KB/J。当IRS反射阵源数与发送天线数均为最大值时,系统可达最大能效。     

Developing Flexible Quinacridone-Derivatives-Based Photothermal Evaporaters for Solar Steam and Thermoelectric Power Generation

Solar-driven interfacial vaporization by localizing solar-thermal energy conversion to the air−water interface has attracted tremendous attention. In the process of converting solar energy into heat energy, photothermal materials play an essential role. Herein, a flexible solar-thermal material di-cyan substituted 5,12-dibutylquinacridone (DCN−4CQA)@Paper was developed by coating photothermal quinacridone derivatives on the cellulose paper. The DCN−4CQA@Paper combines desired chemical and physical properties, broadband light-absorbing, and shape-conforming abilities that render efficient photothermic vaporization. Notably, synergetic coupling of solar-steam and solar-electricity technologies by integrating DCN−4CQA@Paper and the thermoelectric devices is realized without trade-offs, highlighting the practical consideration toward more impactful solar heat exploitation. Such solar distillation and low-grade heat-to-electricity generation functions can provide potential opportunities for fresh water and electricity supply in off-grid or remote areas.     

超宽带大功率合成器设计北大核心CSCD

在80 MHz~1 GHz频段,单个功率管输出功率能达到100 W以上,为研制输出功率400 W的功率放大器,文中设计了四路功率合成器。该合成器需要实现功率容量大、工作频带宽、体积小的设计目标。在功率容量方面,文中采用悬置带状线结构,其功率容量远远大于微带线结构;在工作频带方面,采用切比雪夫九节阻抗变换器,将工作带宽拓宽为80 MHz~1 GHz;在体积方面,文中合成器的功率合成部分采用Y型节级联实现四路功率合成,阻抗变换部分采用切比雪夫阻抗变换器进行阻抗变换,该结构相较于磁环巴伦功率合成器,不但具有损耗小、平坦度高的优点,而且通过将阻抗变换器设计成曲折的形状,进一步缩小了合成器体积。仿真与实测结果显示该合成器在80 MHz~1 GHz范围内还具有较高的平坦度,合成效率可达90%以上。     

F-OFDM仿真系统设计与时频同步算法

针对新一代5G波形的F-OFDM技术开展了研究,通过把一个宽带分为若干个子带,对每个子带进行滤波处理以实现更好的通信效能。基于Simulink平台进行了F-OFDM仿真系统的搭建,重点对F-OFDM符号同步方法和频偏估计方法进行了研究与仿真分析。实验结果表明,基于Chu序列相比采用PN序列可以获得更好的同步效果,基于导频的Classen频偏估计算法相比基于CP的CFO估计算法和基于训练序列的Moose估计方法可以获得更好的频偏估计效果。     

干扰条件下的“北斗”信号解扩重构DOA估计

在干扰条件下，卫星导航抗干扰波束形成算法往往需要卫星信号波达方向（Direction-of-Arrival，DOA）的先验信息。但当存在低信噪比信号或主动干扰源时，常规的DOA估计算法性能急剧下降甚至失效。针对此问题，提出了一种被干扰信号压制的低信噪比“北斗”信号的DOA估计算法。该算法首先通过对接收信号进行子空间投影抑制干扰信号，然后对抑制干扰后的信号进行解扩重构处理，最后通过多重信号分类算法完成对“北斗”信号的DOA估计。仿真结果表明，在干扰信号干信比80 dB条件下，“北斗”信号DOA估计误差在5°以内，为下一步进行波束形成计算提供了高精度的入射角信息。     

基于关键路径延时检测的自适应电压缩减技术

为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4％,11.3％,10.4％和11.6％.     

Semilinear wave models with friction and viscoelastic damping

In this paper, we study the global (in time) existence of small data solutions to the Cauchy problem for the semilinear wave equation with friction, viscoelastic damping, and a power nonlinearity. We are interested in the connection between regularity assumptions for the data and the admissible range of exponents p in the power nonlinearity.     

Voltage reference architectures for low-supply-voltage low-power applications

This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm² and 0.08 mm², respectively.     

Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.