Effect of sodium doping on graded Cu(In1−xGax)Se2 thin films prepared by chemical spray pyrolysis

In the present work we have studied the effect of Na on the properties of graded Cu(In_1−xGa_x)Se₂ (CIGS) layer. Graded CIGS structures were prepared by chemical spray pyrolysis at a substrate temperature of 350 °C on soda lime glass. Sodium chloride is used as a dopant along with metal (Cu/In/Ga) chlorides and n, n-dimethyl selenourea precursors. The addition of Na exhibited better crystallinity with chalcopyrite phase and an improvement in preferential orientation along the (112) plane. Energy dispersive analysis of X-rays (line/point mapping) revealed a graded nature of the film and percentage incorporation of Na (0.86 at%). Raman studies showed that the film without sodium doping consists of mixed phase of chalcopyrite and CuAu ordering. Influence of sodium showed a remarkable decrease in electrical resistivity (0.49–0.087 Ω cm) as well as an increase in carrier concentration (3.0×10¹⁸–2.5×10¹⁹ cm⁻³) compared to the un-doped films. As carrier concentration increased after sodium doping, the band gap shifted from 1.32 eV to 1.20 eV. Activation energies for un-doped and Na doped films from modified Arrhenius plot were calculated to be 0.49 eV and 0.20 eV, respectively. Extremely short carrier lifetimes in the CIGS thin films were measured by a novel, non-destructive, noncontact method (transmission modulated photoconductive decay). Minority carrier lifetimes of graded CIGS layers without and with external Na doping are found to be 3.0 and 5.6 ns, respectively.     

无线传感器网络中移动sink节点的路径规划

在无线传感器网络中,大量感知数据汇集到sink节点的采集方法会导致sink节点附近的节点能量耗尽,造成能量空洞。针对该问题,利用移动的sink节点进行数据收集是一种解决方法,其中移动sink的路径规划成为一个重要的问题。提出了一个移动sink路径规划算法,将无线传感器中随机分布的节点划分为不同的子区域,寻找sink节点移动的最佳转向点,最终得到最优的移动路径,以实现无线传感器网络生命周期最大化。仿真实验表明,与现有方案相比,该算法能显著延长网络的生命周期。     

阀控式密封铅酸蓄电池的寿命及失效分析

介绍了各种影响阀控式密封铅酸蓄电池寿命及容量的因素,分析了其失效的原因,并相应的对电池的维护提出了一些建议。     

HI—V族化合物半导体的高能重离子辐照缺陷研究·

用正电子湮没寿命谱技术研究了2.4×1O15/cm2、2.2×1016/cm2注量的85MeV19F离子辐照N型GaP和1.6×1016/cm 2注量的85MeV19F离子辐照P型InP所产生的辐照缺陷.结果表明:两种注量辐照在GaP中均产生较高浓度的单空位.其浓度随着辐照注量的增大而增加;辐照也在InP中产生较高浓度的单空位.     

光纤荧光传感器衰减寿命的加权对数拟合法

荧光寿命的检测是荧光光学传感器的核心内容，国际上尝试了多种方法来拟合这种理论上为单指数衰减信号的荧光衰减曲线。这些方法包括非线性函数标准拟合方法。即Levenburg-Marquardt方法，以及Prony方法、FFT方法，对数拟合法等等。为了克服在实际应用中发生的信号退化，需要在测量信号衰减寿命的同时测量信号的初始强度。文章介绍了一种加权的对数拟合法，经计算机仿真及实际数据测试均可以得到和Levenburg-Marquardt方法非常接近的结果，且拟合时间大大缩短，测量稳定性大大提高。仿真测试及具体实验测试结果显示了这种方法的有效性。该方法不仅与Levenburg-Marquardt方法的偏差曲线非常相似，而且实验测得的荧光寿命与Levenburg-Marquardt方法偏差在0．2％以内。     

带有回报计划的动态客户关系管理模型及实验应用分析

在客户最大化效用及公司最大化CLV的动态环境下。对所提的带有回报计划的动态客户关系管理模型用于某超市的客户数据库中，发现模型的结果对这类客户是适用的。并给出了不同的客户状态空间对应的有效营销组合策略。结果表明：合适的回报计划可以促进客户的购买、提高公司的利润及缓解价格竞争。回报极限应该比客户的平均购买水平偏高，回报率应该与回报极限的改变方向一致。计划的时间范围应定在一年左右比较合适。对于累积购买水平较高的客户一般不邮寄商品信息。在回报计划的初期与末期不用打折。中期对那些购买次数很少的客户可以实行相应的降价策略。     

Electron spin lifetimes in Hg0.78Cd0.22 Te and InSb

We have made direct pump–probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 μm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, τ_s300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that τ_s is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of τ_s in non-degenerate lightly n-type Hg_0.78Cd_0.22Te of approximately the same band gap as InSb, and find that τ_s varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of τ_s, imply that the Elliott–Yafet model dominates in these materials.     

Yb3+掺杂铝氟磷酸盐玻璃的光谱和激光性能

研究了Yb3 掺杂铝氟磷酸盐 (AFP)玻璃的吸收光谱、荧光光谱 ,测量了Yb3 离子的荧光有效线宽 (Δλeff>5 5nm)以及2 F5 2 能级的荧光寿命 (τmax=2ms)及随掺杂浓度的变化 .应用倒易法计算了Yb3 的发射截面 ,其发射截面可达 0 6 6 82 3pm2 ,且激光增益系数τfσemi达 1 2 89ms.pm2 .评估了Yb3 在AFP玻璃中的激光性能 ,发现其具有较理想的激发态最小粒子数 (0 15 )、饱和抽运强度 (8 3kW cm2 )和最小抽运强度 (1 2 4 5kW cm2 )值及良好的热稳定性 .研究结果表明掺Yb3 氟磷酸盐玻璃是实现高功率超短可调谐激光器的理想增益介质 .     

上海光源储存环束流托歇克寿命研究

上海同步辐射装置(SSRF)是目前在建的第3代专用同步辐射光源. 其储存环电子能量3.5GeV, 设计束团发射度3.9nm•rad. 托歇克寿命将是影响束流寿命的最主要因素, 它主要受限于储存环的能量接受度. 储存环的能量接受度不但取决于 高频电压, 同时也受动力学孔径和物理孔径的影响. 因此能量接受度的计算将是复杂的. 通过计算机模拟跟踪的方法计算储存环各点的能量接受度, 其程序是建立在Accelerator Toolbox(AT)基础上的自编程序. 通过这些能量接受度数据给出更加准确的托歇克寿命, 并且分析了感兴趣的不同运行条件下的托歇克寿命的变化情况.