Specific emitter identification for satellite communication using probabilistic neural networks

Electromagnetic signal emitted by satellite communication (satcom) transmitters are used to identify specific individual uplink satcom terminals sharing the common transponder in real environment, which is known as specific emitter identification (SEI) that allows for early indications and warning (I&W) of the targets carrying satcom furnishment and furthermore the real time electromagnetic situation awareness in military operations. In this paper, the authors are the first to propose the identification of specific transmitters of satcom by using probabilistic neural networks (PNN) to reach the goal of target recognition. We have been devoted to the examination by exploring the feasibility of utilizing the Hilbert transform to signal preprocessing, applying the discrete wavelet transform to feature extraction, and employing the PNN to perform the classification of stationary signals. There are a total of 1000 sampling time series with binary phase shift keying (BPSK) modulation originated by five types of satcom transmitters in the test. The established PNNs classifier implements the data testing and finally yields satisfactory accuracy at 8 dB(±1 dB) carrier to noise ratio, which indicates the feasibility of our method, and even the keen insight of its application in military.     

一种高性能的新结构IGBT

提出了一种低功率损耗的新结构IGBT.该新结构的创新点在于其复合耐压层结构,该耐压层包括深扩散形成的n型缓冲层和硼注入形成的透明背发射区两部分.虽然在正常工作条件下,该新结构IGBT工作于穿通状态,但器件仍具有非穿通IGBT(NPT-IGBT)的优良特性.该新结构IGBT具有比NPT-IGBT更薄的芯片厚度,从而可以获得更好的通态压降和关断功耗之间的折衷.实验结果表明:与NPT-IGBT相比较,新结构IGBT的功率损耗降低了40%.     

Investigation of thin-film electroluminescent structures on rough subsrates

Results of experimental investigations of the volt-brightness characteristics, frequency dependences of brightness, and the directional radiation pattern of electroluminescent MSDM, MSCM, and MSDCM emitters, where M stands for the first transparent and second nontransparent electrodes, S is a semiconductor, D is a thin-film dielectric, and C is a silicone-based composite liquid dielectric with a powdered segnetoelectric filler, developed on conventional “smooth” and rough glass substrates are presented. It is shown that electroluminescent structures on rough surfaces have a brightness approximately two times higher than that of similar structures developed on a “smooth” substrate. Ul’yanovsk State University, 42, L. Tolstoi St., Ul’yanovsk, 432700, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 4, pp. 507–512, July–August, 1997.     

Effect of epitaxial realignment on the leakage behavior of arsenic-implanted,as-deposited polycrystalline Si-on-single crystal Si diodes

When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.     

Low-resistance polysilicon process in contact application for high density devices

For the lowest resistance, it is required to have the epitaxial silicon contact between the silicon plug and the substrate and good step coverage at the high aspect-ratio contact holes, simultaneously. In this work, a double polysilicon (DPS) deposition technique was proposed for the requirements. The first, thin silicon layer is deposited in a single-wafer process chamber with an in-situ H₂-RTP (rapid thermal process) treatment for the epitaxial contact, and the second silicon layer is formed in a batch-type furnace for good step coverage. From chain resistance, Kelvin R_c, and current-voltage (I–V) measurement, the DPS process meets both low resistance and good uniformity, so that it suggests a breakthrough in the small-sized, semiconductor device application.     

热场致发射电子源曝光系统的技术现状和应用前景

高亮度、长寿命的热场致发射(Thermal field emitter)阴极自七十年代中期已受到人们的关注和重视,历经十多年在理论分析、工艺制备和实验研究上做了大量工作之后,于1988年在电子束曝光机上的应用中取得了突破性进展。用晶向为(100)的钨和具有低逸出功的锆制成的(Zr/O/W)热场致发射阴极在四千小时的使用寿命下亮度值超过六硼化镧阴极一个数量级以上,最近的实验结果表明:在工件台上小束斑下能得到接近两千安培每平方厘米的束流密度,而且四十小时内束流稳定度接近千分之一。显然,这几个表征曝光系统综合技术性能的重要指标,说明多年困扰于各种电子束曝光系统(特别是高斯圆斑电子束系统)在高分辨率情况下生产率较低的技术难题已经得到了比较圆满的解决。 八十年代末期,当热场致发射电子源曝光系统的技术关键解决后,这项技术就成为技术发达国家,特别是美国和日本,在电子束曝光领域进行技术竞争的热点;九一年五月底在美国召开的国际三束会议上有关场致发射阴极和MEBES—4型机已经采用TFE的最新报道充分证实了这项技术在电子束曝光技术应用中的重要地位和发展潜力。     

涂敷法制作质谱场电离发射丝的方法及性能研究

本文介绍一种新的质谱场电离发射丝的制备方法——涂敷法,并研究了其制备机理及影响发射丝灵敏度的因素。此外,还对涂敷法制作的发射丝及高温活化法制作的发射丝进行了各项性能对比试验。最后,介绍了涂敷发射丝的应用效果。     

Highly Efficient Quasi 2D Blue Perovskite Electroluminescence Leveraging a Dual Ligand Composition

Perovskite light-emitting diodes (PeLEDs) are advancing because of their superior external quantum efficiencies (EQEs) and color purity. Still, additional work is needed for blue PeLEDs to achieve the same benchmarks as the other visible colors. This study demonstrates an extremely efficient blue PeLED with a 488 nm peak emission, a maximum luminance of 8600 cd m⁻², and a maximum EQE of 12.2% by incorporating the double-sided ethane-1,2-diammonium bromide (EDBr₂) ligand salt along with the long-chain ligand methylphenylammonium chloride (MeCl). The EDBr₂ successfully improves the interaction between 2D perovskite layers by reducing the weak van der Waals interaction and creating a Dion–Jacobson (DJ) structure. Whereas the pristine sample (without EDBr₂) is inhibited by small stacking number (n) 2D phases with nonradiative recombination regions that diminish the PeLED performance, adding EDBr₂ successfully enables better energy transfer from small n phases to larger n phases. As evidenced by photoluminescence (PL), scanning electron microscopy (SEM), and atomic force microscopy (AFM) characterization, EDBr₂ improves the morphology by reduction of pinholes and passivation of defects, subsequently improving the efficiencies and operational lifetimes of quasi-2D blue PeLEDs.     

雷达辐射源信号分选研究进展

雷达辐射源信号分选是雷达信号侦察的关键技术之一,同时也是战场态势感知的重要环节。该文系统梳理了雷达辐射源信号分选的主流技术,从基于脉间调制特征、基于脉内调制特征、基于机器学习的雷达辐射源信号分选3个角度阐述了目前雷达辐射源信号分选工作的主要研究方向及进展,并重点阐释了基于深度神经网络、数据流聚类等最新分选技术的原理与特点。最后,对现有雷达辐射源信号分选技术的不足进行了总结并对未来趋势进行了预测。      

基于IVIF-VIKOR的雷达辐射源信号分选识别特征性能综合评价方法

为解决雷达辐射源信号分选识别特征评价不够客观和缺乏评价依据等问题,提出了一种基于区间模糊原理、模糊交叉熵和多准则折衷法的特征评价方法. 首先通过区间模糊原理建立信噪比分级评价模型,并基于汉明距离进行寻优得出信噪比权重;其次结合信噪比权重和区间直觉模糊加权平均算子将分级模型整合成群决策矩阵,使用熵最大化法计算属性权重;最后基于多准则折衷法框架,采取模糊交叉熵实现特征方案排序. 仿真实验结果表明,所提方法能够给出与实际仿真实验相一致的分选识别特征评价排序结果,并优于逼近理想点方法,验证了所提方法的可行性和有效性.