铝薄膜CMP影响因素分析

提出了在碱性抛光液中铝薄膜化学机械抛光的机理模型,对抛光液的pH值、磨料、氧化剂浓度对过程参数的影响做了一些试验分析。试验结果表面粗糙度的铝薄膜所需的最优化CMP过程参数:硅溶胶粒径为15～20nm,pH值为10.8～11.2,氧化剂浓度为2.5%～3%。     

Pad effects on material-removal rate in chemical-mechanical planarization

The role of a porous pad in controlling material-removal rate (MRR) during the chemical-mechanical planarization (CMP) process has been studied numerically. The numerical results are used to develop a phenomenological model that correlates the forces on each individual abrasive particle to the applied nominal pressure. The model provides a physical explanation for the experimentally observed domains of pressure-dependent MRR, where the pad deformation controls the load sharing between active-abrasive particles and direct pad-wafer contact. The predicted correlations between MRR and slurry characteristics, i.e., particle size and concentration, are in agreement with experimentally measured trends reported by Ouma¹ and Izumitani.²     

Mono-Heteroatom Substitution for Harnessing Excited-State Structural Planarization of Dihydrodibenzo[a,c]phenazines

With the aim of generalizing the structure–properties relationship of bending heterocyclic molecules that undergo prominent photoinduced structural planarization (PISP), a series of new dihydrodibenzo[ac]phenazine derivatives in which one nitrogen atom is replaced by oxygen ( PNO ), sulfur ( PNS ), selenium ( PNSe ), or dimethylmethanediyl ( PNC ) was strategically designed and synthesized. Compounds PNO , PNS , and PNSe have significantly nonplanar geometries in the ground state, which undergo PISP to give a planarlike conformer and hence a large emission Stokes shift. A combination of femtosecond early relaxation dynamics and computational approaches established an R*→I* (intermediate)→P* sequential kinetic pattern for PNS and PNSe , whereas PNO undergoes R*→P* one-step kinetics. The polarization ability of the substituted heteroatoms, which is in the order O<S<Se, correlates with their increase in π conjugation, and hence the Stokes shift of the emission is in the order PNO < PNS < PNSe . Compound PNSe with the largest PISP barrier was shown to be a highly sensitive viscosity probe. Further evidence for heteroatom-harnessing PISP is given by PNC , in which the dimethylmethanediyl substituent lacks lone pair electrons for π extension, showing the normal emission of the bent structure. The results led to the conclusion that PISP is ubiquitous in dihydrodibenzo[ac]phenazines, for which the driving force is elongation of the π delocalization to gain stabilization in the excited state.     

碱性铜粗抛液中氧化剂对化学机械平坦化的影响

针对不合腐蚀抑制剂苯并三氮唑(BTA)的碱性铜粗抛液,通过对3英寸(1英寸=2.54 cm)铜片上的动态抛光速率和静态腐蚀速率的研究来模拟评估氧化剂对晶圆表面平坦化的影响.在12英寸铜镀膜片和TM1图形片上分别研究氧化剂体积分数对表面平坦化的影响.实验结果表明:动态抛光速率和静态腐蚀速率均随着氧化剂体积分数的增加先逐渐增大,达到最大值,然后下降,趋于平缓.片内非均匀性和剩余高低差均随H2O2体积分数的增加,先呈下降趋势,后缓慢上升.当氧化剂体积分数为3％时,动态去除速率(vRR)为398.988 nm/min,静态腐蚀速率vER为6.834 nm/min,vRR/vER比值最大,片内非均匀性最小为3.82％,台阶高低差最小为104.6 nm/min,此时晶圆片有较好的平坦化效果.     

Diversified Excited-State Relaxation Pathways of Donor–Linker–Acceptor Dyads Controlled by a Bent-to-Planar Motion of the Donor

Herein, we introduce the cyclic 8π-electron (C8π) molecule N,N′-diaryl-dihydrodibenzo[a,c]phenazine ( DPAC ) as a dual-functional donor to establish a series of new donor–linker–acceptor (D–L–A) dyads DLA1 – DLA5 . The excited-state bent-to-planar dynamics of DPAC regulate the energy gap of the donor, while the acceptors A1 – A5 are endowed with different energy gaps and HOMO/LUMO levels. As a result, the rate and efficiency of the excited-state electron transfer vs. energy transfer can be finely harnessed, which is verified via steady-state spectroscopy and time-resolved emission measurements. This comprehensive approach demonstrates, for the first time, the manifold of excited-state properties governed by bifunctional donor-based D–L–A dyads, including bent-to-planar, photoinduced electron transfer (PET) from excited donor to acceptor (oxidative-PET), fluorescence resonance energy transfer (FRET), bent-to-planar followed by electron transfer (PFET), and PET from donor to excited acceptor (reductive-PET).     

Flapping Peryleneimide as a Fluorogenic Dye with High Photostability and Strong Visible‐Light Absorption

Flapping fluorophores (FLAP) with a flexible 8π ring are rapidly gaining attention as a versatile photofunctional system. Here we report a highly photostable “flapping peryleneimide” with an unprecedented fluorogenic mechanism based on a bent‐to‐planar conformational change in the S₁ excited state. The S₁ planarization induces an electronic configurational switch, almost quenching the inherent fluorescence (FL) of the peryleneimide moieties. However, the FL quantum yield is remarkably improved with a prolonged lifetime upon a slight environmental change. This fluorogenic function is realized by sensitive π‐conjugation design, as a more π‐expanded analogue does not show the planarization dynamics. With strong visible‐light absorption, the FL lifetime response synchronized with the flexible flapping motion is useful for the latest optical techniques such as FL lifetime imaging microscopy (FLIM).     

钛基片的化学机械抛光技术研究

采用化学机械抛光（CMP）方法对钛基片进行纳米级平坦化处理,通过系列抛光试验优化抛光液组成和抛光工艺条件后,得到AFM-Ra为0.159 nm的纳米级抛光表面和156.5 nm/min的抛光速率。抛光液的电化学分析结果表明：二氧化硅颗粒和乳酸在钛表面有不同程度的吸附缓蚀作用,氨水和F-的络合、扩散作用能破坏缓蚀膜层,两者的中间平衡状态才能得到最佳抛光效果。抛光后钛表层XPS测试结果显示钛表层经过化学氧化形成疏松氧化层后,再通过磨粒和抛光垫的机械作用去除。     

软抛光垫条件下非晶态Ge2Sb2Te5的化学机械抛光

Chemical mechanical planarization（CMP） of amorphous Ge₂Sb₂Te₅（a-GST） is investigated using two typical soft pads（politex REG and AT） in acidic slurry.After CMP,it is found that the removal rate（RR） of a-GST increases with an increase of runs number for both pads.However,it achieves the higher RR and better surface quality of a-GST for an AT pad.The in-situ sheet resistance（R_s） measure shows the higher R_s of a-GST polishing can be gained after CMP using both pads and the high R_s is beneficial to lower the reset current for the PCM cells. In order to find the root cause of the different RR of a-GST polishing with different pads,the surface morphology and characteristics of both new and used pads are analyzed,it shows that the AT pad has smaller porosity size and more pore counts than that of the REG pad,and thus the AT pad can transport more fresh slurry to the reaction interface between the pad and a-GST,which results in the high RR of a-GST due to enhanced chemical reaction.     

利用非光敏BCB树脂实现多芯片组件平坦化研究

多层布线和绝缘介质材料的引入使得多芯片组件的芯片表面形貌凸凹不平,采用旋涂介质膜实现芯片表面平坦是常用的平坦化方法.分别介绍了聚酰亚胺、旋涂玻璃膜和苯并环丁烯(BCB)的平坦化特性,论述了非光敏BCB树脂的平坦化工艺原理.在此原理的基础上实现了非致冷红外焦平面的读出电路芯片平坦化,表面台阶从1.39 μm下降到0.097 μm,平坦度达到93%.     

化学机械抛光制程中铜抛光液平坦化能力的评估

The evaluation methods of planarization capability of copper slurry are investigated.Planarization capability and material removal rate are the most essential properties of slurry.The goal of chemical mechanical polishing(CMP) is to achieve a flat and smooth surface.Planarization capability is the elimination capability of the step height on the copper pattern wafer surface,and reflects the passivation capability of the slurry to a certain extent.Through analyzing the planarization mechanism of the CMP process and experimental results,the planarization capability of the slurry can be evaluated by the following five aspects:pressure sensitivity,temperature sensitivity,static etch rate,planarization efficiency and saturation properties.