Statistical Piezotronic Effect in Nanocrystal Bulk by Anisotropic Geometry Control

Utilizing inner-crystal piezoelectric polarization charges to control carrier transport across a metal-semiconductor or semiconductor–semiconductor interface, piezotronic effect has great potential applications in smart micro/nano-electromechanical system (MEMS/NEMS), human-machine interfacing, and nanorobotics. However, current research on piezotronics has mainly focused on systems with only one or rather limited interfaces. Here, the statistical piezotronic effect is reported in ZnO bulk composited of nanoplatelets, of which the strain/stress-induced piezo-potential at the crystals’ interfaces can effectively gate the electrical transport of ZnO bulk. It is a statistical phenomenon of piezotronic modification of large numbers of interfaces, and the crystal orientation of inner ZnO nanoplatelets strongly influence the transport property of ZnO bulk. With optimum preferred orientation of ZnO nanoplatelets, the bulk exhibits an increased conductivity with decreasing stress at a high pressure range of 200–400 MPa, which has not been observed previously in bulk. A maximum sensitivity of 1.149 µS m⁻¹ MPa⁻¹ and a corresponding gauge factor of 467–589 have been achieved. As a statistical phenomenon of many piezotronic interfaces modulation, the proposed statistical piezotronic effect extends the connotation of piezotronics and promotes its practical applications in intelligent sensing.     

Elongating the area of plasma/fluid interaction of surface nanosecond pulsed discharges

Plasma-assisted flow control is of high industrial interest, but practical applications at full scale require a large surface of interaction. Nanosecond pulsed Dielectric Barrier Discharge (DBD) have demonstrated promising results of flow control, but their interacting region is limited to only a few cm². In this paper, the conditions to extend a surface nanosecond DBD are documented. It is shown that a sliding discharge regime can fully fill an inter-electrode distance of 40 mm. This discharge regime promotes the formation of two hemispheric pressure waves originating from both air-exposed electrodes while an horizontal region of pressure gradient is also observed.     

RF磁控溅射制备钛酸锶钡BST纳米薄膜

钛酸锶钡(BST)薄膜作为一种高K介质材料在微电子和微机电系统等领域具有广阔的应用前景,人们已对BST薄膜的制备工艺技术和介电性能进行了大量的研究。BST纳米薄膜的制备工艺直接影响和决定着薄膜的介电性能(介电常数、漏电流密度、介电强度等)。对RF磁控反应溅射制备BST纳米薄膜的工艺技术进行了综述。从溅射靶的制备、溅射工艺参数的优化、热处理、薄膜组分的控制,及制备工艺对介电性能的影响等方面,对现有研究成果进行了较全面的总结。     

低插损窄带型10.7MHz压电陶瓷滤波器的研制

介绍了低插损窄带型10.7 MHz压电陶瓷滤波器的一种设计制作方法。结合压电陶瓷能陷模理论,通过对滤波器分割电极设计和制造工艺控制技术的研究,强调了工艺控制的重要性。产品达到日本村田同类产品水平,对国产化窄带型10.7 MHz压电陶瓷滤波器的研发和生产具有十分重要的意义。认为选用高Qm值压电陶瓷材料、分割电极和耦合电容的设计、焊接和点蜡工艺的控制等是研制低插损窄带型10.7 MHz压电陶瓷滤波器的重点。     

压电驱动器迟滞特性的Preisach模型研究

压电驱动器的迟滞特性是影响其位移输出精度的主要因素。该文采用改进的Preisach模型对压电驱动器的迟滞特性进行建模，并进行了相应的实验研究。实验结果表明该模型可以很好地预测压电驱动器在经过一定的控制电压序列以后的位移输出值．能够有效地降低迟滞特性对压电驱动器位移输出精度的影响。     

基于压电陶瓷动态信息的结构裂纹识别方法

利用压电陶瓷的动态特性和压电系统的动态信息,对铝梁的裂纹损伤进行了分析研究。随着梁裂纹尺寸的增加,压电陶瓷片的导钠幅值下降,且系统固有频率减小。利用导钠幅值的变化和系统的动态信息,可以对裂纹的位置和尺寸大小进行识别。实验证明该方法的有效性。     

片式多层陶瓷微波谐振器

介绍了片式陶瓷微波谐振器的工艺过程、谐振器的结构以及结构对谐振器参数的影响,谐振器与外电路的耦合采用耦合间隙的方法与谐振单元在同一层内实现,这种新结构既可给制备工艺带来方便,又可减少工艺所带来的误差。用多层陶瓷工艺技术,用高介电常数、低温烧结微波陶瓷实现了中心频率为1GHz,有载品质因数大于80的试验双端口多层微波谐振器。微波谐振器体积小,整个谐振器的尺寸为7mm×2mm×1mm,适用于表面贴装技术。     

从PZT体系看无铅压电陶瓷的可能应用

总结了主要以(Bi0.5Na0.5)TiO3和NaNbO3为基的无铅压电陶瓷的性能，以Pb(Ti，Zr)TiO3基二元系、三元系压电陶瓷的性能与应用为参考，分析了无铅压电陶瓷可能的器件应用。此外，还对拓宽无铅压电陶瓷应用需要改进的性能提出了建议。     

微波陶瓷基印制板制造工艺性研究

对微波陶瓷基印制板的制造工艺流程进行了简单的介绍,对所采用的工艺技术的有效性进行了较为详细的论述。     

用于高频谐振器的PbTiO_3基压电陶瓷

传统的PZT压电陶瓷的相对介电常数较大,一般为1 000以上,用于高频谐振器不易与线路匹配;而PbTiO3基压电陶瓷的相对介电常数较小,一般仅为200左右,对于10 MHz以上频率的谐振器,用PbTiO3基压电陶瓷作为压电振子是最佳的选择。本文主要研究用于高频谐振器的MnO2和Nd2O3改性PbTiO3基压电陶瓷的性质。PbTiO3基压电陶瓷的性质的改善是与此种陶瓷的制备工艺,显微结构和电导机制紧密相关的。