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1.
发光体MAl2O4:Eu2+,RE3+的长余辉形成机理 总被引:7,自引:0,他引:7
提出了Eu^2 激活的MAl2O4:Eu^2 ,RE^3 (M=Ca,Sr,Ba;RE=Dy,Nd,Ho,Er,Pr,Tb等稀土元素)系列铝酸盐发光体的长余辉发光机理。认为O^2-空位Vo是一种电子俘获陷际,是形成余辉的根本原因,RE^3 的引入使陷阱深度适宜而使余辉时间延长。缺陷在晶格中成簇分布,Vo和碱土金属离子空位VM在高温下可相互缔合。利用电子陷阱模型解释了实验中的一些普遍现象并提出了固相反应法合成此类发光体的工艺改进措施。 相似文献
2.
The dipole moment and polarizability changes have been determined from electroabsorption (EA) spectroscopy of solid films of fac tris(2-(phenyl)pyridinato,N,C2′)iridium (III) [Ir(ppy)3]. The maximum changes in the dipole moment |Δμ|S=(5.0±0.5) D/f (f is the local field correction factor: 1.3–1.7) accompany ground state to the lowest singlet, and |Δμ|T=(1.7±0.5) D/f ground state to the lowest triplet metal-to-ligand charge transfer (MLCT) excited states formation, while the average polarizability change
Å3/f2 follows from the fitting procedure throughout the visible absorption spectrum range. The experimental values of |Δμ| as well as energy positions of the MLCT states correlate with the literature results of time-dependent density functional theory. 相似文献
3.
4.
Oleg B. Shchekin Peter J. Schmidt Fahong Jin Nate Lawrence Kenneth J. Vampola Helmut Bechtel Danielle R. Chamberlin Gerd O. Mueller 《固体物理学:研究快报》2016,10(4):310-314
Droop, the decrease of efficiency with increased power density, became a major topic with InGaN LEDs, after its introduction in 2007. This paper provides insight into droop in localized center luminescence phosphors, exemplified here by Eu2+ doped materials. This topic is of increasing importance, as high brightness blue LEDs have reached outputs >1 W/mm2. The nonlinearities in phosphor quantum efficiency result in drive‐dependent color point shift and reduction of overall efficiency of phosphor converted white LEDs which utilize Eu2+ activated phosphors. The efficiency quenching can be traced back to two processes, well‐known in laser physics, excited state absorption or/and cross relaxation by Foerster/Dexter transfer. Both processes lead to reduction in phosphor efficiency, but they can be differentiated. Understanding the root cause of efficiency quenching opens ways to minimize the practical consequences. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
5.
分别以高温固相法、溶胶-凝胶法、水热法和共沉淀法合成Eu3+掺杂的CaMoO4红色荧光粉,通过X-射线衍射(XRD)、场发射扫描电镜(FESEM)、傅立叶变换红外光谱(FTIR)、光致荧光光谱(PL)进行表征,考察荧光粉晶相、形貌及发光性能对制备方法的依赖性。实验表明,由于Ca2+的半径(0.099 nm)与Eu3+半径(0.094 7 nm)大小相差不大,Eu3+容易取代Ca2+的位置进入晶格,Eu3+掺杂的CaMoO4在晶体结构上保持白钨矿结构。FESEM结果表明:未经后处理的水热法所得样品为片状、多孔结构;高温固相法所得样品尺寸大、团聚严重;溶胶-凝胶法所得样品分散度好、呈条形结构;共沉淀法所得样品形貌、尺寸比较均一。荧光光谱显示,四种样品发光强度差异很大,共沉淀法制得样品的发光强度为未经后处理的水热法制得样品的6-7倍,该现象主要是由样品形貌及表面缺陷的差异引起的。 相似文献
6.
以Sm3+作为激活剂,Bi3+作为辅助激活剂,采用水热法合成Ca1-x-ySmxBiySi O3前驱体,然后在1 100℃焙烧得到系列橙红色荧光粉。用X-射线衍射仪、扫描电镜和荧光分光光度计和傅里叶变换红外光谱等手段对样品的组成、结构和形貌及其发光性质进行分析和表征。分析结果表明:产物都为三斜晶系结构的Ca1-x-ySmxBiySi O3和四方结构的方石英Si O2共熔体。在405 nm近紫外光激发下,产物的发射光谱由3个峰组成,发射峰值位于566、606和650 nm处,分别归属于Sm3+的4G5/2→6HJ/2(J=5,7,9)跃迁。产物的激发光谱在405 nm有很强的发射带,与近紫外LED芯片匹配。随着Sm3+掺量的增加,样品发光强度先增强后减弱,当Sm3+的物质的量分数为3%时发光强度达到最大,浓度猝灭机理为电偶极-电偶极相互作用。当Bi3+的物质的量分数在0.3%~1.5%时,对产物Ca0.97Sm0.03Si O3的荧光强度起敏化作用。Sm3+和Bi3+的最佳物质的量分数分别为3%和0.5%。 相似文献
7.
采用高温固相法合成了绿色荧光粉Ca3Y2Si3O12:Tb3+.XRD检测结果显示,荧光粉主晶相为Ca3Y2Si3O12,属单斜晶系.荧光光谱分析表明:Ca3Y2Si3O12:Tb3+硅酸盐荧光粉可以被370 nm的近紫外光激发,发射绿光,主发射峰位于490 nm(5D4→7F6),544 nm(5D4→7F5),585 nm(5D4→7F4)和621 nm(5D4→7F3).用544 nm最强峰监测,得到主激发峰位于370 nm的激发光谱,此光谱覆盖了300~450 nm的波长范围.研究了煅烧条件、掺杂浓度及Ce3+共掺杂对荧光粉发光性能的影响:在1 400 ℃下经二次煅烧 6 h得到的样品的发光性能最佳,Tb3+离子的最佳掺杂浓度为20mol%,Ce3+离子共掺杂能够提高荧光粉的发光强度,其最佳掺杂量为4mol%,说明存在Ce3+→Tb3+的能量传递. 相似文献
8.
Dr. Yongchao Jia Ning Guo Yuhua Zheng Hui Qiao Wenzhen Lv Qi Zhao Prof. Hongpeng You 《Chemphyschem》2012,13(14):3383-3387
A series of the solid‐solution phosphors Lu3?x?yMnxAl5?xSixO12:yCe3+ is synthesized by solid‐state reaction. The obtained phosphors possess the garnet structure and exhibit similar excitation properties as the phosphor Lu3Al5O12:Ce3+, but with an effectively improved red component in the emission spectrum. This can be attributed to the energy transfer from Ce3+ to Mn2+. Our investigation reveals that electric dipole–quadrupole interactions dominate the energy‐transfer mechanism and that the critical distance determined by the spectral overlap method is about 9.21 Å. The color‐tunable emissions of the Lu3?x?yMnxAl5?xSixO12:yCe3+ phosphor as a function of Mn3Al2Si3O12 content are realized by continuously shifting the chromaticity coordinates from (0.354, 0.570) to (0.462, 0.494). They indicate that the obtained material may have potential application as a blue radiation‐converting phosphor for white LEDs with high‐quality white light. 相似文献
9.
An experimental method has been developed for determining the mechanism of luminescence of crystals by the changes arising in the intensity of a burst of their luminescence under the action of a constant electric field. An example of determining the mechanism of luminescence of AgBr crystals and AgBr0.95 and AgBr0.60Cl0.40 solid solutions by the method proposed is presented. We were the first to establish that the low-temperature photoluminescence of AgBr0.95I0.05 in the band with max = 540 nm proceeds by the Schone–Klasens recombination mechanism. It has also been established that the longwave luminescence of AgBr, AgBr0.95I0.05, and AgBr0.60Cl0.40 in the band with max = 630 nm arises as a result of the recombination of electrons localized on a luminescence center with free holes. 相似文献
10.
The red-emitting Ca0.54Sr0.16Eu0.08Gd0.12(MoO4)0.2(WO4)0.8 phosphor is improved in the emission charateristics by charge compensation, of which chromaticity coordinates (CIE) are x=0.66 and y=0.33. Three approaches to charge compensation are investigated, namely (a) 3Ca2+/Sr2+→2Eu3+/Gd3++vacancy, (b) 2Ca2+/Sr2+→Eu3+/Gd3++M+(M+ is a monovalent cation like Li+, Na+ and K+ employed as a charge compensator) and (c) Ca2+/Sr2+→Eu3+/Gd3++N− (N− is a monovalent anion like F−, Cl−, Br− and I− employed as charge compensation ions). Through photoluminescent spectra analyzing the radiative and non-radiative relaxation mechanisms of luminescent system are obtained. Under 20 mA forward-bias current, one red-emitting LED is made by combining 390-405 nm-emitting LED chip and the phosphor. The red-emitting phosphor has broad prospects in LED application field. 相似文献