Selective area epitaxy of CdTe

We have performed selective area epitaxy (SAE) of CdTe layers grown by molecular beam epitaxy using a shadow mask technique. This technique was chosen over other SAE techniques due to its simplicity and its compatibility with multiple SAE patterning steps. Features as small as 50 microns × 50 microns were obtained with sharp, abrupt side walls and flat mesa tops. Separations between mesas as small as 20 microns were also obtained. Shadowing effects due to the finite thickness of the mask were reduced by placing the CdTe source in a near normal incidence position. Intimate contact between the mask and the substrate was essential in order to achieve good pattern definition.     

Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge x Si1-x grown on patterned Si substrates

We have grown Ge _x Si_1-x (0 <x < 0.20,1000–3000Å thick) on small growth areas etched in the Si substrate. Layers were grown using both molecular beam epitaxy (MBE) at 550° C and rapid thermal chemical vapor deposition (RTCVD) at 900° C. Electron beam induced current images (EBIC) (as well as defect etches and transmission electron microscopy) show that 2800Å-thick, MBE Ge_0.19Si_0.81 on 70-μm-wide mesas have zerothreading and nearly zero misfit dislocations. The Ge_0.19Si{0.81} grown on unpatterned, large areas is heavily dislocated. It is also evident from the images that heterogeneous nucleation of misfit dislocations is dominant in this composition range. 1000Å-thick, RTCVD Ge_0.14Si_0.86 films deposited on 70 μm-wide mesas are also nearly dislocation-free as shown by EBIC, whereas unpatterned areas are more heavily dislocated. Thus, despite the high growth temperatures, only heterogeneous nucleation of misfit dislocations occurs and patterning is still effective. Photoluminescence spectra from arrays of GeSi on Si mesas show that even when the interface dislocation density on the mesas is high, growth on small areas results in a lower dislocation density than growth on large areas.     

Surface Growth of Boron Nitride Nanotubes through Boron Source Design

Boron nitride nanotubes (BNNTs) are promising materials due to their unique physical and chemical properties. Fabrication technologies based on gas-phase reactions reduce the control and collection efficiency of BNNTs due to reactant and product dispersion within the reaction vessel. A surface growth method that allows for controllable growth of BNNTs in certain regions using a preburied boron source is introduced. This work leverages the high solubility of boron in metals to create a boronized layer on the surface which serves as the boron source to confine the growth of BNNTs. Dense and uniform BNNTs are obtained after loading catalysts onto the boronized substrate and annealing under ammonia. Confirmatory experiments demonstrate that the boride layer provides boron for BNNTs growth. Furthermore, the patterned growth of BNNTs is realized by patterning the boronizing region, demonstrating the controllability of this method. In addition, the Ni substrate with BNNTs growth exhibits better performance in corrosion resistance and thermal conductivity than pure Ni. This study introduces an alternative strategy for the surface growth of BNNTs based on boron source design, which offers new possibilities for the controllable preparation of BNNTs for various applications.     

超高密度图案化磁记录介质中偶极作用与热辅助磁化研究

由于记录介质的超顺磁效应,传统的水平磁记录方式已经达到理论极限。为了实现特比(Tb,1Terabit=240bit)级的超高密度存储,各种记录方案正在探索之中,其中图案化介质和热辅助磁记录技术被认为是最有发展潜力的方向,如果将两者结合则记录密度会更高。笔者结合已有的实验数据与前人的理论工作,通过有限差分法求解动力学方程和Monte Carlo随机方法,重点研究了以下几个与图案化介质及热辅助磁化技术有关的问题:(1)针对数值微磁学中矩形网格处理复杂边界时计算精度较低的问题,利用磁体本身的几何对称性和退磁张量的性质,通过在实空间求积分的方法解析地推导了等边三棱柱的退磁张量。根据这一张量表达式,可以得到任意精度的退磁因子,把这一结果应用在微磁学的网格划分当中,可以提高对复杂边界的处理能力。(2)为了能够在数值计算中高效地求出系统中的偶极作用能,解决由于偶极作用长程性带来求和速度收敛缓慢的问题,笔者通过重新定义网格求和方程,并采取分段处理的方法,解决了Lekner求和法中由于对称性降低而导致的奇异性问题,成功地把Lekner求和法从三维周期性边界条件下的库仑作用系统,推广到了二维周期性结构的磁偶极作用系统。应用Lekner求和法,可以高效地处理图案化介质这类规则排列的磁偶极子系统中、偶极作用能的计算问题。(3)为了深入理解偶极作用能对信息位稳定性与信息写入过程的具体影响,为实际设计图案化记录系统时选择合适的图案化介质提供理论指导,笔者通过求解二维系统的动力学方程,研究了有限阵列和周期性边界条件阵列磁性颗粒间偶极作用能对系统静态与动态性质的影响。发现有限阵列的静态磁学性质,诸如剩磁状态、矫顽力等与系统的大小密切相关,而磁化动力学过程则不受系统大小的影响。发现偶极作用能对系统的磁化强度翻转模式有决定性的作用。对于有限阵列来说,在平面各向异性的水平磁化翻转过程中,由偶极作用强度决定了三种翻转模式,即一致转动、成核模式及这两种模式的过渡区域;在垂直各向异性的垂直磁化翻转过程中,由偶极作用强度决定了四种翻转模式,即成核模式、非线性激发、旋卷模式以及成核与旋卷的过渡区域。对于周期性边界条件下的阵列,由磁场脉冲持续时间和偶极作用强度共同决定了中心磁矩翻转类型相图,相图可以分为五种翻转类型,即关联翻转、过冲翻转、下冲翻转、弹道翻转以及未发生翻转区。(4)为了理解偶极作用能对系统热稳定性的影响以及温度不均匀性对热辅助写入过程的具体影响,笔者运用Monte Carlo方法研究了这两个问题。发现偶极作用能的增加,会导致系统闭锁温度的升高,从而提高系统的热稳定性。在高斯分布型的稳定温度场中,发现根据温度场的半高宽,可以把翻转过程分为三类不同的成核模式,即边缘成核而后中心扩展模式、边缘成核而后边缘扩展模式以及两种模式的混合模式,并且翻转弛豫时间的对数与半高宽导数之间成分段的线性关系,其分段点受外场和中心温度的影响。而对于给定半高宽的温度场来说,弛豫时间与温度的关系与经典成核理论描述均匀温度场中弛豫时间与温度的关系相似,只是此时的能量势垒和比例系数都与温度场的半高宽有关。     

Binary hairy nanoparticles: Recent progress in theory and simulations

Binary polymer brushes, including mixed homopolymer brushes and diblock copolymer brushes, are an attractive class of environmentally responsive nanostructured materials. Owing to microphase separation of the two chemically distinct components in the brush, multifaceted nanomaterials with functionalized and patterned surfaces can be obtained. This review summarizes recent progress on the theory and simulations related to binary polymer brushes grafted to flat, spherical, and cylindrical substrates, with a focus on patterned morphologies of multifaceted hairy nanoparticles, an intriguing class of hybrid nanostructured particles (e.g., nanospheres and nanorods). In particular, powerful field theory and particle-based simulations suitable for revealing novel structures on these patterned surfaces, including self-consistent field theory and dissipative particle dynamics simulations, are emphasized. The unsolved yet critical issues in this research field, such as dynamic response of binary polymer brushes to environmental stimuli and the hierarchical self-assembly of binary hairy nanoparticles, are briefly discussed. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2014 , 52, 1583–1599     

Formylated polystyrene for the fabrication of pore selective aldehyde group functionalized honeycomb patterned porous polystyrene films

Formylated polystyrene (PS‐CHO) was synthesized by chemical modification of polystyrene (PS) for the fabrication of honeycomb patterned (HCP) porous PS films with aldehyde group functionalized pores via breath figure method under humid conditions. The incorporation of hydrophilic aldehyde group affected the hydrophobicity of PS solution and assisted the self‐assembly of PS‐CHO toward pore. The presence of aldehyde groups in the films were proved by the post treatment with Tollens's reagent, which results in silver decoration at pores. The morphology of the films before and after silver decoration was studied by scanning electron microscopy analysis. The pore selectively self‐assembled aldehyde groups in the patterned porous films can have many applications as a reactive substrate in biomaterials and chemical moieties adhesion. © 2018 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2018 , 56, 1181–1192     

带有锥状反射结构的AlGaInP键合衬底LED

本研究通过光辅助化学腐蚀技术在衬底键合AlGaInP反极性发光二极管中制备出锥状反射镜结构提升器件的光提取效率。首先利用氢氟酸与双氧水在532nm激光的辐射下载GaP:Mg层制备出锥状腐蚀结构,然后将金属反射镜蒸镀在锥状结构之上制备锥状的反射镜结构。在完成全部芯片工艺后,测试结果表明锥状反射镜结构可以显著提升光提取效率,并在光通量测量中与表面粗化集成平板反射镜LED相比较,得到了18.55%的增强。     

65-nm CMOS上带图案悬浮屏蔽的片上巴伦的特性

本文首先用一种简单的巴伦综合方法在工作频率范围内对巴伦结构进行估计,并借助电磁场仿真优化来检验估计的准确性,然后把优化后的巴伦（包括带屏蔽和不带屏蔽的两种情况）用于65-nm 1P6M CMOS工艺进行实现。测试结果显示图案悬浮屏蔽结构在频率范围内明显改善了插入损耗,并十分清晰地显示了线性改善的趋势。我们同样注意到图案悬浮屏蔽结构随着频率的增加逐渐改善了巴伦的相位平衡性,但对巴伦的幅度平衡性影响很小。为了得到器件本身的功率传输能力,我们提出一种方法从测得的三端口S参数直接获得巴伦的最大可用增益（Gmax）,并发现使用插入损耗比较的方式来检验屏蔽效果不是十分客观。另外阻性耦合效率也被用来衡量屏蔽效果。虽然图案悬浮屏蔽结构在测试中是完全对称的,但我们发现它对巴伦显示出不平衡的屏蔽效果。我们可以证明这种不平衡的屏蔽现象来自于巴伦本身的版图不平衡性。