Context-free grammars to detect straight segments and a novel polygonal approximation method

A new method for the polygonal approximation is presented. The method is based on the search for break points through a context-free grammar, that accepts digital straight segments with loss of information, as well as the decrease in the error committed employing the comparison of a tolerable error. We present an application of our method to different sets of objects widely used, as well as a comparison of our results with the best results reported in the literature, proving that our method achieves better values of error criteria. Besides, a new way to find polygonal approximations, with context-free grammars to recognize digital straight segments without loss of pixels, it is also addressed.     

基于关键路径延时检测的自适应电压缩减技术

为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4％,11.3％,10.4％和11.6％.     

Monochromatic k-edge-connection colorings of graphs

A path in an edge-colored graph $G$ is called monochromatic if any two edges on the path have the same color. For $k\ge 2$, an edge-colored graph $G$ is said to be monochromatic $k$-edge-connected if every two distinct vertices of $G$ are connected by at least $k$ edge-disjoint monochromatic paths, and $G$ is said to be uniformly monochromatic $k$-edge-connected if every two distinct vertices are connected by at least $k$ edge-disjoint monochromatic paths such that all edges of these $k$ paths are colored with a same color. We use $m{c}_k\left(G\right)$ and $um{c}_k\left(G\right)$ to denote the maximum number of colors that ensures $G$ to be monochromatic $k$-edge-connected and, respectively, $G$ to be uniformly monochromatic $k$-edge-connected. In this paper, we first conjecture that for any $k$-edge-connected graph $G$, $m{c}_k\left(G\right)=e\left(G\right)-e\left(H\right)+\lfloor \frac{k}{2}\rfloor$, where $H$ is a minimum $k$-edge-connected spanning subgraph of $G$. We verify the conjecture for $k=2$. We also prove the conjecture for $G=K_{k+1}$ and $G=K_{k,n}$ with $n\ge k\ge 3$. When $G$ is a minimal $k$-edge-connected graph, we give an upper bound of $m{c}_k\left(G\right)$, i.e., $m{c}_k\left(G\right)\le k-1$. For the uniformly monochromatic $k$-edge-connectivity, we prove that for all $k$, $um{c}_k\left(G\right)=e\left(G\right)-e\left(H\right)+1$, where $H$ is a minimum $k$-edge-connected spanning subgraph of $G$.     

移动机器人路径规划方法研究

移动机器人技术研究中的一个重要领域是路径规划技术，它分为基于模型的环境已知的全局路径规划和基于传感器的环境未知的局部路径规划。综述了移动机器人路径规划技术的发展现状指出了各种方法的优点与不足，最后对移动机器人路径规划技术的发展趋势进行了展望。     

The 4D Klein-Gordon, Dirac and Quantization Equations from 5D Null Paths

Results from 5D induced-matter and membrane theory with null paths are extended to show that a particle obeys the 4D Klein-Gordon equation but with a variable mass. The Dirac equation also follows, but raises concerns about 4D quantization in the two natural 5D gauges, and reopens the question of a Regge-like trajectory for the spin angular momenta and squared masses of gravitationally-dominated systems.     

如何使用Photoshop6.0美化图像边框

首先介绍了给图像周围加上美丽艺术花纹的方式，其次介绍了给图像周围加上美丽的像框的方式，这两种方式都能对图像周边加以修饰，其中使用了通道法，渐变法和路径法等等。读者还可以上面介绍的方法为启迪，充分发挥个人的想象力，创作出各种各样的、多姿多彩的图像边框。     

Capacity Efficiency and Restorability of Path Protection and Rerouting in WDM Networks Subject to Dual Failures

Resilient optical networks are predominately designed to protect against single failures of fiber links. But in larger networks, operators also see dual failures. As the capacity was planned for single failures, disconnections can occur by dual failures even if enough topological connectivity is provided. In our approach the design of the network minimizes the average loss caused by dual failures, while single failures are still fully survived. High dual failure restorability is the primary aim, capacity is optimized in a second step. For WDM networks with full wavelength conversion, we formulate mixed integer linear programming models for dedicated path protection, shared (backup) path protection, and path rerouting with and without stub-release. For larger problem instances in path rerouting, we propose two heuristics. Computational results indicate that the connectivity is of much more importance for high restorability values than the overall protection capacity. Shared protection has similar restorability levels as dedicated protection while the capacity is comparable to rerouting. Rerouting surpasses the protection mechanisms in restorability and comes close to 100% dual failure survivability. Compared to single failure planning, both shared path protection and rerouting need significantly more capacity in dual failure planning.     

Adsorption effects and NMR properties: Continuous chain approach

The NMR properties of nuclei linked to long linear polymer molecules are sensitive to the influence of hard walls. In this context, the residual energy of tensorial spin-spin interactions is calculated using a path integral approach. Several thermodynamic quantities of the polymer system (free energy, equation of state,...) are also expressed, taking chain stiffness effects and the presence of two repulsive walls into consideration.     

Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH₄/SiF₄ mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH₄ and SiF₄ radicals show that the SiH₄ radicals are important in the nucleation and growth of grains. However, SiF₄ radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF₄ in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.