dU/dt引发的MOSFET误导通分析

分析了MOSFET误导通产生的原因,分别从原理和理论推导两个方面作了分析,主要考虑了开关管中寄生参数对开关特性的影响。通过求解误导通发生的条件,得到哪些参数会导致误触发,最后给出了仿真。文中还提出如何避免MOSFET误导通产生,以及改进方法,对减少实际应用中MOSFET破坏性损坏有一定意义。     

碳纳米管场效应晶体管紧凑模型研究进展

随着摩尔定律逼近极限,碳纳米管场效应晶体管(CNTFET)被认为是5 nm以下CMOS晶体管的有力替代者。CNTFET具有准一维结构,栅极可有效控制导电沟道的导通/关断;同时,载流子在沟道内可实现近弹道输运,具有极高的迁移率。因此,CNTFET在低电压环境下,可提供较大的电流传输能力,为实现纳米级超大规模模拟/逻辑电路提供了解决方案。文章综述了CNTFET紧凑模型的发展现状,分析了现阶段面临的漏极电流精确模型、隧穿效应、寄生效应、多纳米管模型等存在的问题,重点探讨了针对这些问题的解决方案。最后对该紧凑模型未来的应用前景进行了讨论。     

Ku波段宽带高增益基片集成腔圆极化阵列天线北大核心CSCD

提出了一款应用于Ku波段的宽带高增益基片集成腔(Substrate Integrated Cavity,SIC)圆极化阵列天线。通过引入沿SIC口径面对角线放置的一对半月形寄生贴片和SIC底部馈电纵缝,使SIC中的TM_(211)和TM_(121)谐振模式幅值相等、相位相差90°,产生高增益圆极化辐射。同时,双寄生贴片还引入了一种背腔缝隙耦合振子圆极化辐射模式,扩宽了天线高增益圆极化辐射带宽。在此基础上,设计了一款2×2单元顺序旋转馈电的SIC圆极化阵列天线。阵列天线采用双层基片集成波导顺序相移馈电网络进行馈电,进一步增大了天线的圆极化带宽。综合考虑天线的-10 dB反射系数带宽、3 dB轴比带宽和3 dB增益带宽,测试结果表明,圆极化阵列天线的有效带宽为10.74-13.30 GHz(21.3%),在通带范围内最大增益为14.50 dBi。     

低截止频率多倍频程高增益对跖Vivaldi天线北大核心CSCD

针对传统对跖Vivaldi天线的最低截止工作频率较高、增益较低和方向性较差的问题,文中设计了一种新型超宽带对跖Vivaldi天线。融合运用辐射极板开矩形斜槽、加载吸收电阻和寄生矩形贴片等一系列电磁调控措施,扩展了天线的低频工作带宽;采取在天线极板间加载椭圆寄生贴片的技术方式大幅提高了天线的方向性和辐射增益。最后给出了天线的设计流程,从电场分布和表面电流分布的角度揭示了天线的微观工作机制。仿真和实测结果表明:天线的工作频带为0.85~16 GHz(近20倍频程),相对带宽达180%,在3 GHz以上频段增益均超过10 dBi,并且具有较好的端射方向性,在超宽带无线通信、雷达探测、电子对抗和遥感遥测等领域具有广泛的应用前景。     

MIMO Channel Capacity and Configuration Selection for Switched Parasitic Antennas

Multiple-input multiple-output (MIMO) systems offer significant enhancements in terms of their data rate and channel capacity compared to traditional systems. However, correlation degrades the system performance and imposes practical limits on the number of antennas that can be incorporated into portable wireless devices. The use of switched parasitic antennas (SPAs) is a possible solution, especially where it is difficult to obtain sufficient signal decorrelation by conventional means. The covariance matrix represents the correlation present in the propagation channel, and has significant impact on the MIMO channel capacity. The results of this work demonstrate a significant improvement in the MIMO channel capacity by using SPA with the knowledge of the covariance matrix for all pattern configurations. By employing the “water-pouring algorithm” to modify the covariance matrix, the channel capacity is significantly improved compared to traditional systems, which spread transmit power uniformly across all the antennas. A condition number is also proposed as a selection metric to select the optimal pattern configuration for MIMO-SPAs.     

一种对三维芯片中硅通孔进行完整建模与寄生参数提取的有效方法

针对三维芯片中硅通孔（through-silicon via, TSV）的准确电学建模问题,本文提出了一种电阻电容（RC）电路模型以及相应的有效参数提取技术。该电路模型同时考虑了半导体效应与静电场影响,适合于低频与中频的电路信号范围。该方法采用一种基于悬浮随机行走（floating random walk, FRW）算法的静电场电容提取技术,然后将它与刻画半导体效应的MOS电容结合,形成等效电路模型。与Synopsys公司软件Sdevice所采用的对静电场/半导体效应进行完整仿真的方法相比,本文方法计算效率更高,并且也能处理一般的TSV电路版图。对多个含TSV的结构进行了计算实验,结果验证了本文方法在从10KHz到1GHz频率范围内的建模准确性,也显示出它相比Sdevice方法最多有47倍的加速比。     

一种新型的X波段圆极化微带天线

该文采用双层方形贴片开对角槽的结构设计了一种新型的应用于X波段的圆极化微带贴片天线。通过仿真优化,天线轴比<3dB的带宽480 MHz,增益达到6.29dB,反射系数s11<-10dB的相对阻抗带宽达到6.6%,天线具有良好的圆极化和阻抗匹配特性。     

GaN HEMT器件封装技术研究进展

GaN高电子迁移率晶体管(HEMT)器件由于其宽禁带材料的独特性能,相比硅功率器件具有击穿场强高、导通电阻低、转换速度快等优势,在智能家电、交直流转换器、光伏逆变器以及电动汽车等领域有着广泛的应用前景.但GaN HEMT器件的高功率密度和高频工作特性,给器件封装带来了极大挑战,要使其出色性能得以充分发挥,其封装结构、材...     

高速脊波导激光器寄生电容的分析

高速调制半导体激光器光源是光纤通信系统、相控阵雷达等的关键器件。高速激光器的寄生电容是影响其调制带宽的因素之一。为了减小寄生电容,针对脊波导结构激光器的电容,采用计算机模拟与实际测试相结合的方法,进行了理论分析和实验验证。结果表明,其寄生电容大小不仅与电极金属化面积有关,还与隔离沟的腐蚀深度有关。当腐蚀至波导层时,寄生电容减小到10pF以下。这一结论对实现激光器的高速调制是非常有意义的。     

An approach to control the spurious currents in a multiphase lattice Boltzmann method and to improve the implementation of initial condition

Multiphase lattice Boltzmann methods are known to generate spurious or parasitic currents at the fluid–fluid interfaces. This nonphysical phenomenon has to be avoided, or at least controlled, in order to achieve reliable solutions. In this article, a method to control these fictitious velocities via lattice refinement is proposed, which is based on interface thickness control for which both the spurious currents and the physical fluid–fluid interface thickness vanishes as the spatial resolution increases. It has been found that a proper interface thickness adjustment is required as the lattice refinement is applied, or an increase in spurious currents, instead of a reduction, can occur. By combining the new method with an appropriate multiphase flow initialization, the overall stability for high density O(1000) and viscosity O(100) ratios is greatly improved. Although this research has been conducted with a Rothman and Keller type lattice Boltzmann model, it is believed that other types of multiphase lattice Boltzmann models could benefit from the basic ideas underlying this research. Copyright © 2015 John Wiley & Sons, Ltd.