The visible and ultraviolet organic light-emitting diodes with germanium dioxide as facile solution-processed anode buffer layer

Germanium dioxide (GeO₂) aqueous solutions are facilely prepared and the corresponding anode buffer layers (ABLs) with solution process are demonstrated. Atomic force microscopy, X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy measurements show that solution-processed GeO₂ behaves superior film morphology and enhanced work function. Using GeO₂ as ABL of organic light-emitting diodes (OLEDs), the visible device with tris(8-hydroxy-quinolinato)aluminium as emitter gives maximum luminous efficiency of 6.5 cd/A and power efficiency of 3.5 lm/W, the ultraviolet device with 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole as emitter exhibits short-wavelength emission with peak of 376 nm, full-width at half-maximum of 42 nm, maximum radiance of 3.36 mW/cm² and external quantum efficiency of 1.5%. The performances are almost comparable to the counterparts with poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) as ABL. The current, impedance, phase and capacitance as a function of voltage characteristics elucidate that the GeO₂ ABL formed from appropriate concentration of GeO₂ aqueous solution favors hole injection enhancement and accordingly promoting device performance.     

Environmental Effect of Macrocyclic Molecules on the Oxidation of Triethylamine by Ferricyanide Ion in Aqueous Solution

The effect of 18-crown-6 and kryptofix (2,2,1) on the oxidation of triethylamine byaqueous ferricyanide ion has been studied at pH 4, 7, and 9.The macrocycle retarded the normal oxidation process at all pH values,the effect depending on the macrocyclic ligand concentration Kryptofix (2,2,1) had a greater effect than 18-crown-6 at all pHvalues in this study. For 18-crown-6, retardation decreases in the order pH 9 > 4 > 7 while forkryptofix it follows the order pH 9 > 7 > 4.     

Optical Diffractive Memories: Angular Selectivity and Diffraction Efficiency in Dichromated Gelatin

Two thousand images of resolution 512×512 pixels as a regular matrix pattern of 10×10 elements are stored, where each element is angularly multiplexed 20 times in a 25 μm thickness of dichromated gelatin emulsion without cross-talk effect. The surface area of the matrix is 1 cm². We show good concordance of the angular selectivity between the experimental result and theory. The diffraction efficiency of each 20 multiplexed images is measured and has nearly the same value. Examples of reconstructed images for multiple applications are given, for example, storage of 160,000 images on a 3′1/2 floppy disc format, which is about 100 min of black and white film. Application can be made to automobile cartography and storage of X-ray images as well as weather forecast images. Colored diffractive images are also possible and are illustrated.     

High resolution X-ray diffraction of GaN grown on Si (1 1 1) by MOVPE

High temperature GaN layers have been grown on Si (1 1 1) substrate by metalorganic vapor phase epitaxy (MOVPE). AlN was used as a buffer layer and studied as a function of thickness and growth temperature. The growth was monitored by in situ laser reflectometry. High resolution X-ray diffraction (HRXRD) revealed that optimized monocrystalline GaN was obtained for a 40 nm AlN grown at 1080 °C. This is in good agreement with the results of morphological study by scanning electron microscopy (SEM) and also confirmed by atomic force microscopy (AFM) observations. The best morphology of AlN with columnar structure and lower rms surface roughness is greatly advantageous to the coalescence of the GaN epilayer. Symmetric and asymmetric GaN reflections were combined for twist and stress measurements in monocrystalline GaN. It was found that mosaicity and biaxial tensile stress are still high in 1.7 μm GaN. Curvature radius measurement was also done and correlated to the cracks observations over the GaN surface.     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.     

Time dependent analysis of finite buffer fluid flows and risk models with a dividend barrier

Based on the matrix-analytic approach to fluid flows initiated by Ramaswami, we develop an efficient time dependent analysis for a general Markov modulated fluid flow model with a finite buffer and an arbitrary initial fluid level at time 0. We also apply this to an insurance risk model with a dividend barrier and a general Markovian arrival process of claims with possible dependencies in successive inter-claim intervals and in claim sizes. We demonstrate the implementability and accuracy of our algorithms through a set of numerical examples that could also serve as test cases for comparing other solution approaches.      

Examining the effects of caching,compression and popup filtering on internet surfing

Over the years the number of Web users has increased dramatically unfortunately leading to the inherent problem of congestion. This can affect each user's surfing experience. This paper investigates download times associated with a web request, identifies where delays occur, and provides guidelines which can be followed by web developers to enable a faster and more efficient download and service for their users. We conclude that delays in Internet traffic and congestion can often be attributed to poorly developed sites (e.g. excessive image size). Copyright © 2005 John Wiley & Sons, Ltd.     

PARASITIC TOLERANT DIFFERENTIAL SC TRANSCONDUCTANCE USING UNITY GAIN BUFFERS

The unity gain buffer will be good to design high frequency SCF if its resistiveeffects can be eliminated,and therefore the whole parasitic sensitivities will greatly be reduced.On the basis of this concept,a novel parasitic tolerant SC DTE(differential transconductanceelement)is proposed.SC floating inductor and integrator fit for high frequency applications areformed by the DTE.The computer simulation and experiment on a third order elliptic LP filterverify its validity.     

Cyclic networks with general blocking and starvation

We introducegeneral starvation and consider cyclic networks withgeneral blocking and starvation (GBS). The mechanism of general blocking allows the server to process a limited number of jobs when the buffer downstream is full, and that of general starvation allows the server to perform a limited number of services in anticipation of jobs that are yet to arrive. The two main goals of this paper are to investigate how the throughput of cyclic GBS networks is affected by varying (1) the total number of jobsJ, and (2) the buffer allocationk=(k₁..., k_m) subject to a fixed total buffer capacityK=k ₁ +... + k_m. In particular, we obtain sufficient conditions for the throughput to be symmetric inJ and to be maximized whenJ=K/2. We also show that the equal buffer allocation is optimal under the two regimes of light or heavy usage. In order to establish these results, we obtain several intermediate structural properties of the throughput, using duality, reversibility, and concavity, which are of independent interest.Research supported in part by NSF Grant No. ECS-8919818.     

Germanium islands embedded in strained silicon quantum wells grown on patterned substrates

Germanium islands were embedded in strained silicon quantum wells in order to provide an improved electron confinement in vicinity of the islands. Growth was performed on relaxed SiGe layers. Patterned substrates were used, favouring lattice relaxation as well permitting the fabrication of small Ge islands at deposition temperatures above 500 °C. Photoluminescence analysis reveals a strongly reduced dislocation related signal. The low temperature spectra are dominated by intense signals from the germanium islands. The origin of these signals were investigated by removing the islands by etching, analysing reference samples without a silicon quantum well, varying the germanium deposition and the growth temperature.