Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

Effect of additive length and chemistry on the morphology of blends of conjugated thiophenes and fullerene derivative acceptor molecules

Small molecule additives have been shown to increase the device efficiency of conjugated polymer (donor) and fullerene derivative (acceptor) based organic solar cells by modifying the morphology of the device active layer. In this paper we conduct a systematic study of how additives affect the donor‐acceptor morphology using molecular dynamics simulations of blends of thiophene‐based oligomers, mimicking poly(3‐dodecylthiophene) (P3DDT) or poly(2,2′:5′,2”‐3,3”‐didocyl‐terthiophene) (PTTT), and fullerene derivatives with additives of varying length and chemical functionalization, mimicking experimentally used additives like methyl ester additives, diiodooctane, and alkanedithiols. We find that functionalization of additives with end groups that are attracted to acceptor molecules are necessary to induce increased donor‐acceptor macrophase separation. In blends where acceptors intercalate between oligomer alkyl side chains, functionalized additives decrease acceptor intercalation. Functionalized additives with shorter alkyl segments increase acceptor macrophase separation more than additives with same chemical functionalization but longer alkyl segments. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015 , 53, 1046–1057     

Monte Carlo simulation of electric conductivity for pure and doping fullerene (C60)

In this paper, we have used Monte Carlo (MC) method to simulate and study the temperature and doping effects on the electric conductivity of fullerene (C60). The results show that the band gap has reduced by the doping and the charge carrier transport is facilitated from valence band to conduction band by the temperature where is touched a 300 K. In this case, the conductivity reached a value of $4\times {10}^{-7}\text{S}{\text{cm}}^{-1}$. The electric conductivity of C60 can increase by the triphenylmethane dye crystal violet (CV) alkali metal to reach $4\times {10}^{-3}\text{S}{\text{cm}}^{-1}$ at 303 K. Our results of MC simulation have a good agreement with those extracted from literature [10], [33].     

Periodic Néel skyrmion transport

In this work, we have used the MuMax3 software to simulate devices consisting of a ferromagnetic thin film placed over a heavy metal thin film. The devices are two interconnected partial-disks where a Néel domain wall is formed in the disks junction. In our simulations we investigate devices with disk radius $r=50$ nm and different distance d between the disks centers (from $d=12$ nm to $d=2R=100$ nm). By applying strong sinusoidal external magnetic fields, we find a mechanism able to create, annihilate and even manipulate a skyrmion in each side of the device. This mechanism is discussed in terms of interactions between skyrmion and domain wall. The Néel domain wall formed in the center of the device interacts with the Néel skyrmion, leading to a process of transporting a skyrmion from one disk to the other periodically. Our results have relevance for potential applications in spintronics such as logical devices.     

SIMPLIS环境中开关电源集成电路控制器模型的开发及应用

介绍现代开关电源行业仿真工作的意义和现状,以及专用仿真软件包SIM etrix/SIMPLIS的优点和不足。通过实例给出SIMPLIS环境中集成电路控制芯片的建模过程,并就其中的关键技术予以简单讨论。     

通信性能评估的仿真实验研究

研究了流量控制和差错控制对通信性能的综合影响，着重分析了停止-等待协议和连续ARQ协议的优缺点，讨论了信道利用率和帧长的关系。介绍了几种多点接人技术的基本原理，如CSMA和CSMA／CD，并给出了各自相应的性能仿真曲线。所设计的通信性能评估实验，仿真界面形象丰富，与实验知识点紧密结合，可以大大提高实验教学的效率和质量。     

带通采样在数据采集中的应用研究

在数据采集中采用带通采样，可大大降低采样率，但系统中的抗混叠滤波器会造成相位的非线性。采用对滤波后的信号进行带通采样，然后再用FRR滤波器校正相位的非线性，从而不失真地还原原信号，最后在Matlab中进行仿真，验证了该方法的有效性。     

对地域通信网呼损的研究与仿真

本文通过对具有迂回路由的地域通信网呼损的研究与计算机仿真,得出迂回路由的存在使呼损大为降低的结论,从而增加了地域通信网的抗毁性能。     

用增量的累积量方法测量大气风场

为了在非平稳、非线性条件下能得到真实风场的良好估计,提出了一种用空间分布天线（SA）雷达信号的增量累积量测量大气风场参数的方法。该方法基于结构函数方法,利用高阶累计量在信息处理中的特性,用零延迟的增量累计量求解平均水平风速等具体参量，并在大气散射模型基础上对增量累积量方法进行了数值模拟,得出了同理论分析一致的结果.分析和计算表明,该方法完全适用于局地平稳条件，可以减小风场参量估计对天线间距的敏感度；阶数k≥3时,对高斯噪声有很强抑制;同时可以得到风场参量的高阶估计，这是普通的二阶方法（如全相关分析、全谱分析）不具备的。     

Mixed Analog Digital Simulation of Integrated Circuits with BRASIL

In this paper the approach of BRASIL in modelling digitalintegrated circuits is presented. BRASIL consists of a timingsimulator for digital MOS circuits coupled with an algorithmfor circuit simulation. The timing simulation is based upon afast macromodelling approach and the calculation of time-variantRC networks. The circuit simulator takes advantage of structuringthe system of nodal equations. With BRASIL a fast and accuratesimulation of digital circuits, with special regard to the analogbehaviour of highly integrated systems is possible.