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排序方式: 共有57条查询结果,搜索用时 609 毫秒
1.
D. Ravichandran K. Yamakawa A.S. Bhalla R. Roy 《Journal of Sol-Gel Science and Technology》1997,9(1):95-101
Phase pure powder and thin films of the novel ferroelectric materials SrBi2Ta2O9 (SBT) have been prepared using the organic precursors. The xero-gel formed was dried and characterized using TGA and DTA
to determine the organic burn out and crystallization temperature of SBT. Powder X-ray diffraction was used systematically
to check the crystallinity of SBT. Phase pure SBT powder was formed as low as 650°C and thin films at 600°C in comparison
to other earlier reported work. SEM micrographs show a grain size of ≈0.1 μm and show crack free films with a film thickness
of 2 μm. 相似文献
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3.
DDF是一种高容量的NAND Flash。以DDF产品为例,研究和讨论了它的Read Disturb测试方法。受测试时间的限制,只能选择局部的存储区间进行DDF的Read Disturb测试。这样局部区间的测试结果是否能够代表整个芯片的性能,设计了一套实验,对这个课题进行了研究和讨论。依据非挥发性记忆体产品的特性,主要以阈值电压的分布为参考来评价DDF芯片性能的一致性和性能恶化趋势的一致度。最后的实验结果证明了这种测试方法的正确性和合理性。这种分析方法也可以用于其他非挥发性记忆体产品的其他可靠性测试项目的评估。 相似文献
4.
Hiroya Kitahata Kiyoharu Tadanaga Tsutomu Minami Norifumi Fujimura Taichiro Ito 《Journal of Sol-Gel Science and Technology》2000,19(1-3):589-593
Hexagonal YMnO3 has a ferroelectric property with an optimal remanent polarization along the c-axis. The c-axis oriented YMnO3 thin films with a small leakage current were prepared by the sol-gel dipping method. The c-axis orientation of the films was promoted by the addition of diethanolamine to the Mn precursor solution. A heat treatment with multiple steps led to a dense film structure with fine grains. The dense structure resulted in the decrease of the leakage current. Furthermore, when the films were heat-treated in a vacuum, the leakage current became considerably small and the ferroelectricity of the YMnO3 thin films was observed even at room temperature. 相似文献
5.
Boeun Cho Seong Hun Yu Moo Hyung Lee Juhee Lee Jun Young Lee Jeong Ho Cho Moon Sung Kang 《Organic Electronics》2014,15(12):3439-3444
We demonstrate the versatility of the threshold voltage control for organic thin-film transistors (OTFTs) based on formation of discontinuous pn-heterojunction on the active channel layer. By depositing n-type dioctyl perylene tetracarboxylic diimide molecules discontinuously onto base p-type pentacene thin films (the formation of the discontinuous pn-heterojunction), a positive shift of the threshold voltage was attained which enabled realizing a depletion-mode transistor from an original enhancement-mode pristine pentacene transistor. Careful control of the threshold voltage based on this method led assembling a depletion-load inverter comprising a depletion-mode transistor and an enhancement-mode transistor connected in series that yielded tunable signal inversion voltage approaching 0 V. In addition, the tunability could be applied to improve the program/erase signal ratio for non-volatile transistor memories by more than 4 orders of magnitude compared to reference memory devices made of pristine pentacene transistors. 相似文献
6.
Dhinesh Babu Velusamy Richard Hahnkee Kim Kazuto Takaishi Tsuyoshi Muto Daisuke Hashizume Soyoon Lee Masanobu Uchiyama Tetsuya Aoyama Jean-Charles Ribierre Cheolmin Park 《Organic Electronics》2014,15(11):2719-2727
Polymer ferroelectric-gate field effect transistors (Fe-FETs) employing ferroelectric polymer thin films as gate insulators are highly attractive as a next-generation non-volatile memory. For minimizing gate leakage current of a device which arises from electrically defective ferroelectric polymer layer in particular at low operation voltage, the materials design of interlayers between the ferroelectric insulator and gate electrode is essential. Here, we introduce a new solution-processed interlayer of conductive reduced graphene oxides (rGOs) modified with a conjugated block copolymer, poly(styrene-block-paraphenylene) (PS-b-PPP). A FeFET with a solution-processed p-type oligomeric semiconducting channel and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) insulator exhibited characteristic source–drain current hysteresis arising from ferroelectric polarization switching of a PVDF-TrFE insulator. Our PS-b-PPP modified rGOs (PMrGOs) with conductive moieties embedded in insulating polymer matrix not only significantly reduced the gate leakage current but also efficiently lowered operation voltage of the device. In consequence, the device showed large memory gate voltage window and high ON/OFF source–drain current ratio with excellent data retention and read/write cycle endurance. Furthermore, our PMrGOs interlayers were successfully employed to FeFETs fabricated on mechanically flexible substrates with promising non-volatile memory performance under repetitive bending deformation. 相似文献
7.
Design and scaling of the NEMory cell have been discussed. Based on analytical simulation using a simple parallel-plate approximation, scaling guideline is derived in terms of pull-in, release voltage, pull-in time and release time. It has been proved that beam length is the most dominant factor which increases operating voltage with scaling-down. Beam and air gap thickness also need to be scaled down in order to lower operating voltage while improving operating speed. 相似文献
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10.
Yu-Ting Liu Xian-Bin Li Hui Zheng Nian-Ke Chen Xue-Peng Wang Xu-Lin Zhang Hong-Bo Sun Shengbai Zhang 《Advanced functional materials》2021,31(21):2009803
Phase change memory (PCM) is an emerging non-volatile data storage technology concerned by the semiconductor industry. To improve the performances, previous efforts have mainly focused on partially replacing or doping elements in the flagship Ge-Sb-Te (GST) alloy based on experimental “trial-and-error” methods. Here, the current largest scale PCM materials searching is reported, starting with 124 515 candidate materials, using a rational high-throughput screening strategy consisting of criteria related to PCM characteristics. In the results, there are 158 candidates screened for PCM materials, of which ≈68% are not employed. By further analyses, including cohesive energy, bond angle analyses, and Born effective charge, there are 52 materials with properties similar to the GST system, including Ge2Bi2Te5, GeAs4Te7, GeAs2Te4, so on and other candidates that have not been reported, such as TlBiTe2, TlSbTe2, CdPb3Se4, etc. Compared with GST, materials with close cohesive energy include AgBiTe2, TlSbTe2, As2Te3, TlBiTe2, etc., indicating possible low power consumption. Through further melt-quenching molecular dynamic calculation and structural/electronic analyses, Ge2Bi2Te5, CdPb3Se4, MnBi2Te4, and TlBiTe2 are found suitable for optical/electrical PCM applications, which further verifies the effectiveness of this strategy. The present study will accelerate the exploration and development of advanced PCM materials for current and future big-data applications. 相似文献