Precise Extraction of Charge Carrier Mobility for Organic Transistors

Unreliable mobility values, and particularly greatly overestimated values and severely distorted temperature dependences, have recently hampered the development of the organic transistor field. Given that organic field‐effect transistors (OFETs) have been routinely used to evaluate mobility, precise parameter extraction using the electrical properties of OFETs is thus of primary importance. This review examines the origins of the various mobilities that must be determined for OFET applications, the relevant extraction methods, and the data selection limitations, which help in avoiding conceptual errors during mobility extraction. For increased precision, the review also discusses device fabrication considerations, calibration of both the specific gate‐dielectric capacitance and the threshold voltage, the contact effects, and the bias and temperature dependences, which must actually be handled with great care but have mostly been overlooked to date. This review serves as a systematic overview of the OFET mobility extraction process to ensure high precision and will also aid in improving future research.     

Metalorganic chemical vapor deposition of silver thin films for future interconnects by direct liquid injection system

Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt₃)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO₂/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO₂/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO₂ substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas.     

积层板的制造方法

概述了积层板的开发背景、制造工艺和最近的开发动向。     

动力环境集中监控系统可靠性的提高

为实现电源设备乃至通信机房的少人或无人值守和集中维护,必须建立一套完善的电信局动力环境集中监控系统。文中结合番禺区电信局的实际,讨论了提高系统运行可靠性的几点措施,包括硬件方面与软件方面的手段,关键在于加强系统的运行管理。     

电子产品研制阶段可靠性增长试验研究

结合工程实际经验,深入讨论了可靠性增长过程及实现途径,在保持试验条件和改进过程不变的条件下,实施了对具体型号电子产品的可靠性增长试验,达到了预期的可靠性增长目标,并且利用可靠性增长试验的数学模型(AMSAA模型)来评估产品的可靠性增长,对开展可靠性增长与可靠性增长试验工作具有重要的实际意义.     

Low temperature delamination of plastic encapsulated microcircuits

Plastic encapsulated microcircuits (PEMs) are increasingly being used in applications requiring operation at temperatures lower than the manufacturer’s recommended minimum temperature, which is 0°C for commercial grade components and −40°C for industrial and automotive grade components. To characterize the susceptibility of PEMs to delamination at these extreme low temperatures, packages with different geometries, encapsulated in both biphenyl and novolac molding compounds, were subjected to up to 500 thermal cycles with minimum temperatures in the range −40 to −65°C in both the moisture saturated and baked conditions. Scanning acoustic microscopy revealed there was a negligible increase in delamination at the die-to-encapsulant interface after thermal cycling for the 84 lead PQFPs encapsulated in novolac and for both 84 lead PQFPs and 14 lead PDIPs encapsulated in biphenyl molding compound. Only the 14 lead novolac PDIPs exhibited increased delamination. Moisture exposure had a significant effect on the creation of additional delamination.     

可靠性试验样本量和截尾时间的计算

可靠性寿命试验中，一般都因受到费用和时间的限制，因此要用截尾试验获得信息，再据此对其可靠性进行统计推断，用非参数估计的方法探讨了进行可靠性试验的样本量或截尾时间的估计方法。     

石油测井仪器可靠性指标探讨

在分析常用可靠性指标及其应用现状的基础上，根据可靠性理论及石油测井仪器的特点。提出了石油测井仪器的可靠性模型。在探讨常用可靠性指标对石油测井仪器适用性的同时，提出将平衡稳定工作时间NWTURE和免维修测井井次NOLWNM作为石油测井仪器可靠性指标的思想；探讨了获取可靠性指标的途径。给出了推荐使用的石油测井仪器可靠性指标。     

电子产品可靠性设计与成本控制

介绍了可靠性设计过程涉及的质量控制成本的解决方法，通过对最有可能影响可靠性的电路设计、元器件选用等方面的分析，介绍了在降低可靠性设计成本的基础下更好地解决可靠性问题的一些方法。     

Calibrating software reliability models when the test environment does not match the user environment

Software failures have become the major factor that brings the system down or causes a degradation in the quality of service. For many applications, estimating the software failure rate from a user's perspective helps the development team evaluate the reliability of the software and determine the release time properly. Traditionally, software reliability growth models are applied to system test data with the hope of estimating the software failure rate in the field. Given the aggressive nature by which the software is exercised during system test, as well as unavoidable differences between the test environment and the field environment, the resulting estimate of the failure rate will not typically reflect the user‐perceived failure rate in the field. The goal of this work is to quantify the mismatch between the system test environment and the field environment. A calibration factor is proposed to map the failure rate estimated from the system test data to the failure rate that will be observed in the field. Non‐homogeneous Poisson process models are utilized to estimate the software failure rate in both the system test phase and the field. For projects that have only system test data, use of the calibration factor provides an estimate of the field failure rate that would otherwise be unavailable. For projects that have both system test data and previous field data, the calibration factor can be explicitly evaluated and used to estimate the field failure rate of future releases as their system test data becomes available. Copyright © 2002 John Wiley & Sons, Ltd.