Metalorganic chemical vapor deposition of silver thin films for future interconnects by direct liquid injection system

Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt₃)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO₂/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO₂/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO₂ substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas.     

Barrier layer effect of tantalum on the electromigration in sputtered copper films on hydrogen silsesguioxane and SiO2

As IC devices scale down to the submicron level, the resistance-capacitance (RC) time delays are the limitation to circuit speed. A solution is to use low dielectric constant materials and low resistivity materials. In this work, the influence of underlying barrier Ta on the electromigration (EM) of Cu on hydrogen silsesquioxane (HSQ) and SiO₂ substrates was investigated. The presence of a Ta barrier not only improves the adhesion between Cu and dielectrics, but also enhances the crystallinity of Cu film and improves the Cu electromigration resistance. The activation energy obtained suggests a grain boundary migration mechanism and the current exponent calculated indicates the Joule heating effect.     

钨金属化与氧化铝陶瓷高温共烧

阐述了钨金属化与氧化铝陶瓷高温共烧工艺的特点,分析了烧结过程中温度曲线和露点等工艺参数对钨金属化与瓷件结合强度、密封气密性和收缩率的影响。通过反复的试验和烧结机理分析对比,给出了最佳的控制参数。     

New antenna design approach – 3D polymer printing and metallization. experimental test at 14–18 GHz

This paper proves a new approach for rapid prototyping of radio antennas through 3D printing and chemical metallization. For this purpose, a standard metal pyramidal horn prototype is compared with its 3D printed replica. Three different 3D polymer printers are tested. The printed samples are assessed nondestructively by an X-ray Industrial Computed Tomography (CT) scanner, and then metalized via chemical deposition and chemical-electrochemical deposition. Copper with two different layer thicknesses and nickel materials are deployed and verified as a metallization opportunity. Again the CT scanner, X-ray fluorescent analysis and nanoindentation technique were used to perform the metallization quality estimation. As a result, a qualitative polymer prototype was produced having weight of 13 g – ten times lighter than the original. The prototype was successfully metalized and was able to be soldered. The radio-measurement comparison with the metal original for frequencies 14–18 GHz showed no significant differences. Finally, a simple dynamometric test confirmed the bonding between the metal and the polymer. To the best of our knowledge this is the first known comprehensive analysis of the possibility to print 3D lightweight wideband polymer antenna prototypes with a stable chemical metallization and radio properties very close to the original at 14–18 GHz.     

UV‐Triggered Polydopamine Secondary Modification: Fast Deposition and Removal of Metal Nanoparticles

Since the first report in 2007, polydopamine (PDA) coating has shown great potential as a general and versatile method to create functional nanocoatings on arbitrary substrates. Slow kinetics and poor controllability of the coating and secondary modification processes, however, have limited the further development of this attractive method. In this work, it is demonstrated that UV irradiation at 365 nm significantly accelerates the process of secondary modification of a PDA‐coated surface. The kinetics of both thiol and amine modifications of PDA are increased 12‐fold via UV irradiation, while the kinetics of metal ion reduction at the PDA interface is increased more than 550 times. Moreover, it is demonstrated that irradiating a PDA/metal nanoparticle composite surface with UV light at 254 nm leads to dissolution of the deposited metal nanoparticles (MNPs). Finally, grayscale metallic patterns, dynamic deposition, and removal of MNPs on PDA surface are realized with the proposed method.     

氢吸附导致的SiC表面金属化

文章报道了最近对氢吸附导致β-SiC（001）-32表面金属化的研究结果.提出了β-SiC（001）-32表面金属化的一种新机制：通过形成氢桥键（Si-H-Si 复合结构）形成表面n型掺杂.该复合结构通过氢桥键增强了沟槽底部的弱结合的Si-Si二聚体,并向体系的导带提供电子.     

Localized Ligand Induced Electroless Plating (LIEP) Process for the Fabrication of Copper Patterns Onto Flexible Polymer Substrates

The “ligand induced electroless plating (LIEP) process” is a simple process to obtain localized metal plating onto flexible polymers such as poly(ethylene terephtalate) and polyvinylidene fluoride sheets. This generic and cost‐effective process, efficient on any common polymer surface, is based on the covalent grafting by the GraftFast process of a thin chelating polymer film, such as poly(acrylic acid), which can complex copper ions. The entrapped copper ions are then chemically reduced in situ and the resulting Cu⁰ species act as a seed layer for the electroless copper growth which, thus, starts inside the host polymer. The present work focuses on the application of the LIEP process to the patterning of localized metallic tracks via two simple lithographic methods. The first is based on a standard photolithography process using a positive photoresist masking to prevent the covalent grafting of PAA in designated areas of the polymer substrate. In the second, the patterning is performed by direct printing of the mask with a commercial laser printer. In both cases, the mask was lifted off before the copper electroless plating step, which provides ecological benefits, since only the amount of copper necessary for the metallic patterning is used.     

Structural and Passivative Behaviors of Cu(In) Thin Film

This investigation prepares a low-resistivity and self-passivated Cu(In) thin film. The dissociation behaviors of dilute Cu-alloy thin films, containing 1.5–5at.%In, were prepared on glass substrates by a cosputter deposition, and were subsequently annealed in the temperature range of 200–600 °C for 10–30 min. Thus, self-passivated Cu thin films in the form In₂O₃/Cu/SiO₂ were obtained by annealing Cu(In) alloy films at an elevated temperature. Structural analysis indicated that only strong copper diffraction peaks were detected from the as-deposited film, and an In₂O₃ phase was formed on the surface of the film by annealing the film at an elevated temperature under oxygen ambient. The formation of In₂O₃/Cu/SiO₂ improved the resistivity, adhesion to SiO₂, and passivative capability of the studied film. A dramatic reduction in the resistivity of the film occurred at 500 °C, and was considered to be associated with preferential indium segregation during annealing, yielding a low resistivity below 2.92 μΩcm. The results of this study can be potentially exploited in the application of thin-film transistor–liquid crystal display gate electrodes and copper metallization in integrated circuits.     

The effect of composition on the barrier height and contact resistance of Tixw1-x/si contacts

Barrier height is an important parameter for metal/silicon rectifying contacts. In this paper the barrier heights of Ti_xW{1-x}/Si contacts have been studied and found to range from 0.54 eV for high Ti content to 0.66 eV for pureW. Interpretation is made in terms of the parallel Schottky diode model of Tu. Ohmic contact measurements of Ti_xW_1-x/ Si metallization after heat treatment at 500° C have also been made and specific contact resistances of less than 10⁻⁶ ohm-cm² obtained in shallow implanted junction devices.