Waveguide external cavity narrow linewidth semiconductor lasers

Narrow linewidth light source is a prerequisite for high-performance coherent optical communication and sensing.Waveguide-based external cavity narrow linewidth semiconductor lasers(WEC-NLSLs)have become a competitive and attractive candidate for many coherent applications due to their small size,volume,low energy consumption,low cost and the ability to integrate with other optical components.In this paper,we present an overview of WEC-NLSLs from their required technologies to the state-of-the-art progress.Moreover,we highlight the common problems occurring to current WEC-NLSLs and show the possible approaches to resolving the issues.Finally,we present the possible development directions for the next phase and hope this review will be beneficial to the advancements of WEC-NLSLs.     

光刻技术及其新进展

介绍了用于制作半导体集成电路的光刻工艺的概念、分类及发展过程，阐述了当前光刻工艺的主流，并重点介绍了极紫外光刻、X射线光刻、电子束光刻、离子束光刻、纳米图形转印等下一代光刻技术的特点及其面临的挑战。     

高效全固化钛宝石腔内倍频蓝光和四倍频紫外激光器的研究

用半导体抽运的Q开关YLF倍频激光器抽运钛宝石晶体，在平凹腔内加入组合的石英双折射滤光片压缩线宽，用LBO晶体腔内激发二次谐波，聚焦到BBO上产生四次谐波深紫外光。在抽运功率3．8w时，输出610mW．416nm蓝光。用长焦距的透镜聚焦二次谐波．得到64mW，208nm的紫外激光。基频光的谱线宽度是决定倍频效率的关键因素。实验观察到激光器的频谱宽度与双折射滤光片的带宽有一个数量级的差别，考虑到模式竞争和增益饱和效应，数值模拟了加入双折射滤光片后的钛宝石激光器的实际线宽，结果与实验中测量的数据基本一致。实验还分析了基频光的线宽对二次谐波效率的影响、二次谐波的线宽对四次谐波效率的影响、基频光的波长对四次谐波激发效率的影响。     

Zn~(2+)、Sn~(4+)共取代对YIG铁氧体性能的影响

该文通过1 400℃固相烧结制备出Zn2+和Sn4+共取代的Y3Fe5-2xZnxSnxO12(x=0~0.35)铁氧体材料,详细研究了离子取代量对钇铁石榴石铁氧体微观结构及磁性能的影响。研究表明,Zn2+、Sn4+都进入了钇铁石榴石铁氧体的晶格中。随着离子取代量的增加,钇铁石榴石铁氧体的密度与饱和磁化强度先增大后减小;其磁损耗则先减小后增大,在x=0.25时磁损耗取得最小值。该研究进一步说明了Zn2+和Sn4+取代在一定范围内可有效降低材料的磁损耗及控制材料的饱和磁化强度。     

闪耀光栅外腔反馈压窄半导体激光器线宽技术的研究

在讨论半导体激光线宽压窄理论的基础上,利用闪耀光栅作为外部反馈元件,介绍了由中心波长为949.6nm、原始线宽为1.2THz的单管半导体激光器构成的反馈外腔,它能够很好的改善半导体激光器的性能。实验得到了中心波长稳定的、单纵模的高质量激光输出,边模抑制比大于30dB,线宽优于1.2MHz(Δλ<3.6×10-6nm)。实验证实了强反馈能够很好地改善外腔半导体激光器的动态特性。     

大能量窄线宽全固态钛宝石激光器的研究进展

主要介绍了用于差分吸收激光雷达系统和蓝绿激光通信的大能量、窄线宽全固态脉冲钛宝石（Tn：Al2O3）激光器的应用及其在国内外的研究历史和现状。阐述了目前获得大能量、窄线宽全固态钛宝石激光器的几种典型方法,比较了其优缺点,并对这种激光器的发展前景进行了展望。     

值得重视的田口式参数设计法

本文着重论述了田口式参数设计法在半导体制造中对线宽的质量控制.通过田口式参数设计法,可以优化线宽控制对光刻过程步骤中的可控参数的条件,以便将不可控因素的影响降到最低.     

Analysis of the temperature dependence of the high-frequency EMR spectra of Mn ions in the lithium-ion battery material LiMn<Subscript>2</Subscript>O<Subscript>4</Subscript>

This paper deals with the analysis of the temperature dependence of high-frequency EMR (HF-EMR) spectra due to Mn³⁺ and Mn⁴⁺ ions in the lithium manganese spinel LiMn₂O₄. A range of powder samples obtained by the sol-gel method with calcinations in several temperature ranges were prepared for this study. Based on the initial characterization carried out by a number of techniques, the physicochemical and structural properties of the samples were earlier determined. Independently, temperature magnetization and HF-EMR measurements were carried out. The EMR spectra vary strongly between samples, indicating possible structural or chemical changes. Quantitative analysis of the temperature dependence of the HF-EMR spectra due to Mn³⁺ and Mn⁴⁺ ions in LiMn₂O₄ is presented in this paper. The spectral analysis concerns the line shape, linewidth, intensity and g-factors. Fittings using the Lorentzian spectral shape and, to a certain extent, the Gaussian spectral shape have been carried out in order to parameterize the temperature dependence of the HF-EMR spectra. This parameterization of the HF-EMR experimental data enables a deeper characterization of the samples. Subsequently, a better insight into the role of the Mn³⁺ and Mn⁴⁺ ions in accounting for the characteristics most suitable for application of LiMn₂O₄ as a cathode material may be gained.     

双折射率色散效应对液晶可调光衰减器的影响

文章利用Jones矩阵方法计算和分析了双折射率色散效应对一种液晶可调光衰减器(VOA)衰减能力的影响.结果表明,当激光谱线宽度较窄时,双折射率色散效应将导致液晶VOA的光衰减能力大幅度减弱;反之,双折射率色散效应对液晶VOA光衰减能力的影响可以忽略,但液晶VOA本身的光衰减能力很低.因此,液晶VOA适用于较窄线宽的激光光源,在设计和使用时应充分考虑液晶双折射率色散效应对其光衰减能力的影响.