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1.
Modeling ion implantation of HgCdTe 总被引:2,自引:0,他引:2
H. G. Robinson D. H. Mao B. L. Williams S. Holander-Gleixner J. E. Yu C. R. Helms 《Journal of Electronic Materials》1996,25(8):1336-1340
Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction
is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant
doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by
Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T
by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution
depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released,
they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results
of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing
conditions, including implant dose, annealing temperature, and doping background. 相似文献
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Optical, electrical, and structural properties of Al2O3 films subjected to silicon-ion implantation and annealing were investigated by means of photoluminescence measurements, current-voltage
measurements and transmission electron microscopy. Transmission electron microscopy revealed that silicon nanocrystals were
epitaxially formed in ϑ-Al2O3. Visible photolum inescence was observed, for the first time, from Al2O3 films containing silicon nanocrystals. Observed visible photoluminescence seems to be related to quantum size effects in
silicon nanocrystals as well as localized radiative recombination centers located at the interface between silicon nanocrystals
and matrix, similar to porous Si and other Si nanostructures. The conduction mechanism in the samples was studied by using
dc current-voltage measurements. The conduction properties depend on temperature and applied electric fields. The conduction
behavior in low electric fields consists of thermally activated region dominated by the Schottky conduction and nonthermally
activated region in which carrier transport is controlled by space-charge-limited currents. The conduction behavior under
relatively high electric fields is almost independent of temperature and well fitted by space-charge-limited conduction. 相似文献
4.
High temperature plastic deformation is associated with large changes in the microstructure of single crystals. To observe this microstructure during the creep test, we have performed X-ray reflection topography, taking advantage of the high intensity of the synchrotron radiation. A special creep machine was designed which permits in situ observation. Creep tests and microstructural observations were performed on NaCl single crystals compressed along <100> at about 600°C. As soon as the deformation started, subgrains appeared within the crystal, independent of the initial microstructure. Migration of the subboundaries during transient creep is followed by stabilization during steady state creep where a well developed subgrain structure keeps constant while new appearing subboundaries migrate. Misorientation between sub-grains increases progressively although more slowly in the steady state creep. A correlation between the microstructure evolution and the changes in the creep curves has been attempted. 相似文献
5.
利用二次离子质谱和扩展电阻探针技术测量了硅中注入硼的深度分布 .在适当的测量深度 ,用扩展电阻探针技术测得的结果对二次离子质谱技术测量的结果进行了标定 ,从而得到硅片中硼原子的深度分布 .用近似模型估算了扩展电阻探针针尖半径对测试分辨率的影响 .若探针针尖半径为r0 ,测量斜面的角度为 ξ ,在用扩展电阻探针技术测量载流子浓度的深度分布时 ,可以近似认为深度分辨率为 7 86r0 sinξ.还定性讨论了样品表面耗尽层对扩展电阻探针技术的影响. 相似文献
6.
Effects of fluorine implantation in GaAs have been investigated by electrical characterization. Ion implantation at 100 keV
energy was conducted with doses of 1011 and 1012/cm2. The effect of fluorine implantation on current-voltage (I-V) characteristics of Schottky diodes was significant. Carrier
compensation was observed after implantation by the improved I-V characteristics. The lower dose implanted samples showed
thermionic emission dominated characteristics in the measurement temperature range of 300 to 100K. The starting wafer and
the low dose implanted samples after rapid thermal annealing (RTA) showed similar I-V properties with excess current in the
lower temperature range dominated by recombination. The higher dose implanted samples showed increased excess current in the
whole temperature range which may result from the severe damage-induced surface recombination. These samples after RTA treatment
did not recover from implantation damage as in the low dose implantation case. However, very good I-V characteristics were
seen in the higher dose implanted samples after RTA. The influence of the higher dose ion implantation was to produce more
thermal stability. The results show the potential application of fluorine implantation in GaAs device fabrication. 相似文献
7.
M. Kocan G.A. Umana-Membreno J.S. Chung F. Recht L. McCarthy S. Keller U.K. Mishra G. Parish B.D. Nener 《Journal of Electronic Materials》2007,36(9):1156-1159
This paper reports results of a study of non-alloyed ohmic contacts on Si-implanted AlGaN/GaN heterostructures, obtained from
current–voltage characteristics of transfer-length method (TLM) test structures. It is shown that the measured contact resistance
from the Ti/Au/Ni metal contacts, deposited on Si-implanted regions, to the two-dimensional electron gas channel at the AlGaN/GaN
heterointerface of the non-implanted region, is formed by three different components: (i) contact resistance between the metal␣and
the semiconductor (0.60 ± 0.16 Ω mm), (ii) resistance of the implanted region (0.62 ± 0.03 Ω mm) and (iii) an additional resistance
(0.72 ± 0.24 Ω mm) giving a total value of 1.9 ± 0.3 Ω mm. The specific ohmic contact resistance was determined to be (2.4 ± 0.5) × 10−5 Ω cm2. 相似文献
8.
通过测量卢瑟福背散射沟道谱和随机谱,掌握了一种可以对制作离子注入型半导体可饱和吸收镜过程中离子注入的剂量进行选择的方法。 相似文献
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用卤素灯快速退火工艺代替原始的炉退火工艺,使全离子注入的硅双极浅结器件的杂质浓度更高、结深更浅,从而有效地改善了器件的电参数性能。用这种新工艺制做的分频器,工作频率由原来的1300MHz提高到了1600MHz。该工艺操作方便,节省能源,均匀性、重复性、可控性都大大地优于原始炉退火工艺。 相似文献