超宽带大功率合成器设计北大核心CSCD

在80 MHz~1 GHz频段,单个功率管输出功率能达到100 W以上,为研制输出功率400 W的功率放大器,文中设计了四路功率合成器。该合成器需要实现功率容量大、工作频带宽、体积小的设计目标。在功率容量方面,文中采用悬置带状线结构,其功率容量远远大于微带线结构;在工作频带方面,采用切比雪夫九节阻抗变换器,将工作带宽拓宽为80 MHz~1 GHz;在体积方面,文中合成器的功率合成部分采用Y型节级联实现四路功率合成,阻抗变换部分采用切比雪夫阻抗变换器进行阻抗变换,该结构相较于磁环巴伦功率合成器,不但具有损耗小、平坦度高的优点,而且通过将阻抗变换器设计成曲折的形状,进一步缩小了合成器体积。仿真与实测结果显示该合成器在80 MHz~1 GHz范围内还具有较高的平坦度,合成效率可达90%以上。     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

扬声器系统时域结构系数的仿真

从扬声器系统的等效类比线路出发,得出了阻抗特性Z(jω)的表达形式及其曲线。采用全面最小二乘法识别扬声器系统的时域函数的全套系数,从而测出扬声器系统的低频特性参数。以计算机仿真技术为基础,通过MATLAB和EWB软件进行系统模拟分析仿真,得到扬声器系统的阶跃响应、阻抗曲线等特性。     

共面波导有限金属厚度效应的研究

用保角变换法对共面波导金属厚度效应进行了理论分析，编制了相应的计算机程序，给出了数值解，并对此进行了多元曲线拟合，导出了考虑金属厚度后的形状比k、有效介电常数、特征阻抗、损耗的闭定表达式。用此修正表达式求得特征阻抗及损耗的数值解，并与K．C．格普塔的修正值及实验测量值进行了详细比较，结果表明此修正公式与实验值相符较好。     

射频板条CO_2激光器并联谐振技术的研究

本文利用周期性网络模型计算了射频板条CO2激光器电极的纵向电压分布．探讨了并联谐振技术在板条器件中获得成功运用的原因．提出了利用并联谐振技术进一步提高电压分布均匀性的两个途径．     

幅相一致行波管高频电路CAD研究

 在行波管的设计和装配过程中，各部件的尺寸必须严格控制，高频电路参数的离散对行波管色散特性有极大的影响。使用螺旋导电面模型，模拟计算了高频结构各主要参数离散对色散特性和轴向互作用耦合阻抗的影响。分析计算了夹持杆宽度、翼片高度、螺旋线平均半径、螺距、夹持杆介电常数等离散时对色散特性和轴向互作用耦合阻抗的影响，为新型幅相一致行波管的设计和生产提供了很有价值的参考建议。     

抽指加权宽带扇形叉指声表面波滤波器的等效电路分析

扇形换能器可以看成若干个沿孔径方向划分的均匀孔径换能器电端并联而成，根据梅森(Mason)等效电路模型以及由其延伸的混合场等效电路模型，推导出整个扇形换能器的导纳矩阵和频率响应，其中采用复阻抗模型考虑了叉指电极与自由表面的阻抗不连续的因素。本方法能够模拟指间反射、三次行程、指条寄生阻抗以及外围电路等对器件性能的影响；理论模拟与实验结果吻合。     

弱电系统中的地线干扰与接地方法

介绍了地线的干扰机理以及减小地线干扰的对策和接地的基本方法.在电子电路中,地线不仅为电路提供一个电位公共参考点,而且也为电流提供一条能够流回源的低阻抗路径.由于地线存在阻抗,当电流流过地线时,会在地线上产生电压差,从而形成地线干扰,严重时将会影响电路的正常工作.减小或消除地线干扰的主要方法是减小地线的阻抗和地线电流.为此,可以针对不同的信号频率及干扰性质,根据系统的结构和功能采用相应的接地方式,将接地、屏蔽及滤波等措施结合使用.     

Determination of the degree of cure under dynamic and isothermal curing conditions with electrical impedance spectroscopy

This article presents a new methodology for the quantitative determination of the progress of the curing reaction of a thermosetting resin, using the results of electrical impedance spectroscopy. The method is an extension of the use of the imaginary impedance maximum as a reaction progress indicator and is based on the demonstration of a close correlation between the reaction rate, as measured by conventional differential scanning calorimetry, and the rate of change of the value of the imaginary impedance spectrum maximum. Tests on a commercial aerospace epoxy resin under both isothermal and dynamic heating conditions with calorimetry and impedance spectroscopy have demonstrated the validity of the method and set the accuracy limits involved. This technique can be used as a real-time online control tool for thermoset composite manufacturing. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 146–154, 2004     

螺旋线径向挤压变形对其慢波结构冷测特性的影响

 介绍了用MAFIA软件的准周期边界条件计算螺旋线行波管慢波结构的色散和耦合阻抗，以及用ANSYS软件对螺旋线径向挤压变形建模的方法，并对螺旋线受挤压径向变形对其冷测特性的影响进行了详细的分析。结果表明:螺旋线径向挤压变形会导致相速增大，而在通常的变形范围内耦合阻抗也会增加；当变形继续增大时耦合阻抗上升到最大值后开始下降。