Acridone-Based Host Materials for Green Phosphorescent and Thermally Activated Delayed Fluorescent OLEDs with Low-Efficiency Roll-Offs

By linking the carbazole unit to the nitrogen atom of acridone through phenyl or pyridyl, two compounds, named 10-(4-(9H-carbazol-9-yl)phenyl)acridin-9(10H)-one (AC-Ph-Cz) and 10-(5-(9H-carbazol-9-yl)pyridin-2-yl)acridin-9(10H)-one (AC-Py-Cz) were designed and synthesized. These two materials, characterized with highly twisted and rigid structure, good thermal stability, and balanced carrier-transporting properties, were employed as host materials for green phosphorescent and thermally activated delayed fluorescent organic light-emitting diodes (OLEDs). The carbazole group, despite its small contribution to the highest occupied molecular orbitals (HOMOs) of these two materials, plays an essential role as an intramolecular host in energy delivering and improving the hole transporting ability of these two hosts. The incorporation of the electron-deficient pyridyl group as a linking group slightly improves the electron transporting capability of AC-Py-Cz. The green phosphorescent OLED (PhOLED) based on AC-Py-Cz exhibited excellent device performance with a turn-on voltage of 2.5 V, a maximum power efficiency and an external quantum efficiency (η_ext) of 89.8 lm W⁻¹ and 25.2 %, respectively, benefitting from the better charge-balancing ability of AC-Py-Cz host due to the presence of the pyridyl bridge. More importantly, all the devices based on these two hosts showed low efficiency roll-off at high brightness due to the suppressed non-radiative transition in the emitting layer. In particular, the AC-Py-Cz-hosted green PhOLED exhibited an efficiency roll-off of 1.6 % from the maximum next at a high brightness of 1000 cd m⁻² and a roll-off of 15.9 % at an extremely high brightness of 10000 cd m⁻². This study manifests that acridone-based host materials have great potential in fabricating OLEDs with low efficiency roll-off.     

Precise Extraction of Charge Carrier Mobility for Organic Transistors

Unreliable mobility values, and particularly greatly overestimated values and severely distorted temperature dependences, have recently hampered the development of the organic transistor field. Given that organic field‐effect transistors (OFETs) have been routinely used to evaluate mobility, precise parameter extraction using the electrical properties of OFETs is thus of primary importance. This review examines the origins of the various mobilities that must be determined for OFET applications, the relevant extraction methods, and the data selection limitations, which help in avoiding conceptual errors during mobility extraction. For increased precision, the review also discusses device fabrication considerations, calibration of both the specific gate‐dielectric capacitance and the threshold voltage, the contact effects, and the bias and temperature dependences, which must actually be handled with great care but have mostly been overlooked to date. This review serves as a systematic overview of the OFET mobility extraction process to ensure high precision and will also aid in improving future research.     

Charge transport and recombination in heterostructure organic light emitting transistors

Light-emitting field effect transistors (LEFETs) are a class of organic optoelectronic device capable of simultaneously delivering the electrical switching characteristics of a transistor and the light emission of a diode. We report on the temperature dependence of the charge transport and emissive properties in a model organic heterostructure LEFET system from 300 K to 135 K. We study parameters such as carrier mobility, brightness, and external quantum efficiency (EQE), and observe clear thermally activated behaviour for transport and injection. Overall, the EQE increases with decreasing temperature and conversely the brightness decreases. These contrary effects can be explained by a higher recombination efficiency occurring at lower temperatures, and this insight delivers new knowledge concerning the optimisation of both the transport and emissive properties in LEFETs.     

Measurement of Electrophysiological Signals In Vitro Using High-Performance Organic Electrochemical Transistors

Biological environments use ions in charge transport for information transmission. The properties of mixed electronic and ionic conductivity in organic materials make them ideal candidates to transduce physiological information into electronically processable signals. A device proven to be highly successful in measuring such information is the organic electrochemical transistor (OECT). Previous electrophysiological measurements performed using OECTs show superior signal-to-noise ratios than electrodes at low frequencies. Subsequent development has significantly improved critical performance parameters such as transconductance and response time. Here, interdigitated-electrode OECTs are fabricated on flexible substrates, with one such state-of-the-art device achieving a peak transconductance of 139 mS with a 138 µs response time. The devices are implemented into an array with interconnects suitable for micro-electrocorticographic application and eight architecture variations are compared. The two best-performing arrays are subject to the full electrophysiological spectrum using prerecorded signals. With frequency filtering, kHz-scale frequencies with 10 µV-scale voltages are resolved. This is supported by a novel quantification of the noise, which compares the gate voltage input and drain current output. These results demonstrate that high-performance OECTs can resolve the full electrophysiological spectrum and suggest that superior signal-to-noise ratios could be achieved in high frequency measurements of multiunit activity.     

单电子晶体管I-V特性数学建模

基于正统单电子理论，提出了单电子晶体管的I-V特性数学模型。该模型的优点是：它由实际物理参数直接获得；支持双栅极工作，更利于逻辑电路应用。I-V特性和跨导仿真结果证实了它的准确性。     

贝克曼AllegraTM21R型超高速离心机故障排除一例

贝克曼Allegra^TM 21R型超高速离心机开机后，操作面板上出现错误代码“28”，离心机不旋转。离心机的电机采用无刷感应驱动，由电机驱动电源模块BSMl0GD60DN2驱动离心机的电机。故障是由于电源模块BSMl0GD60DN2损坏引起的。采用东芝三相桥式IGBT电源模块MG25Q6ES42代替BSMl0GD60DN2，并更换已烧毁的栅极电阻后。开机试验，仪器恢复正常。     

SOI全介质隔离与高频互补双极兼容工艺

ＳＯＩ材料的全介质隔离技术与高频互补双极工艺的结合是研制抗辐照能力强、频带宽、速度高的集成运算放大器的理想途径，从实验的角度提出了一种ＳＯＩ材料全介质隔离与高频互补双极工艺兼容的工艺途径。     

CMOS电路中抗Latch-up的保护环结构研究

闩锁是CMOS集成电路中的一种寄生效应,这种PNPN结构一旦被触发,从电源到地会产生大电流,导致整个芯片的失效。针对芯片在实际测试中发现的闩锁问题,介绍了闩锁的测试方法,并且利用软件Tsuprem4和Medici模拟整个失效过程,在对2类保护环(多子环/少子环)作用的分析,以及各种保护结构的模拟基础之上,通过对比触发电压和电流,得到一种最优的抗Latch up版图设计方法,通过进一步的流片、测试,解决了芯片中的闩锁失效问题,验证了这种结构的有效性。     

一种基于能带工程设计的CaAsSb/InP异质结双极晶体三极管

异质结晶体三极管（HBT）的性能与其材料体系密不可分，利用能带工程可以大大优化器件的结构，提高器件性能，文章从分析HBT的能带结构及设计要求入手，介绍了一种利用能带工程设计的基于GaAsSb/InP材料体系的新型HBT器件的结构及其性能，分析了该器件与其它材料体系器件相比所具有的优异特性，说明了对HBT的各区材料，其带边的相对位置所起的重要作用，最后，文章还报道了近期的实验情况，说明了GaAsSb/InP体系HBT的实际性能与理论预言一致。