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1.
Prof. Dr. Peter Hess 《Chemphyschem》2022,23(6):e202100880
In the periodic table the position of each atom follows the ‘aufbau’ principle of the individual electron shells. The resulting intrinsic periodicity of atomic properties determines the overall behavior of atoms in two-dimensional (2D) bonding and structure formation. Insight into the type and strength of bonding is the key in the discovery of innovative 2D materials. The primary features of 2D bonding and the ensuing monolayer structures of the main-group II–VI elements result from the number of valence electrons and the change of atom size, which determine the type of hybridization. The results reveal the tight connection between strength of bonding and bond length in 2D networks. The predictive power of the periodic table reveals general rules of bonding, the bonding-structure relationship, and allows an assessment of published data of 2D materials. 相似文献
2.
北斗三星无源定位技术 总被引:6,自引:2,他引:4
介绍了北斗双星定位系统的特点、功能、系统组成和工作原理,说明了北斗有源定位方式在应用方面的局限性。针对北斗有源定位方式不能无线电静默,和人们对具有无线电隐蔽性的卫星定位的需求,详细介绍一种北斗三星无源定位技术:包括工作原理、实现方法、定位精度分析和目前达到的定位精度。阐述了北斗三星无源定位技术的优点和应用形势。 相似文献
3.
基于粗糙集信息观的决策表属性约简方法 总被引:2,自引:0,他引:2
粗糙集理论是近年来发展起来的一种有效的处理不精确、不确定、含糊信息的数学理论方法,它被广泛应用于相容和不相容决策表的属性约简和核属性计算。利用反例指出目前基于粗糙集信息观[2、6]的决策表属性约简和核属性计算方法的局限性。对决策表的性质作了深入的研究,研究发现文献[2、6]方法的不足原因是:它们没有考虑U/ind(C)中等价类的相客性。给出了基于U/ind(C)中等价类相客性的属性约简定义和核属性定义,并给出了一种新的基于粗糙集信息观的决策表属性约简和核属性计算方法。讨论了该方法同文献[2、6]方法的区别。最后用相同实例验证了该方法的有效性。 相似文献
4.
Ting Gang Zhu Uttiya Chowdhury Michael M. Wong Jonathan C. Denyszyn Russell D. Dupuis 《Journal of Electronic Materials》2002,31(5):406-410
In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky
rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers
grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5
V at 100 A/cm2 are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage
in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm2, and a forward-voltage drop of 3.5 V at a current density of 100 A/cm2. It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC
substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge
terminations in mesageometry GaN Schottky rectifiers has also been studied. 相似文献
5.
Cheul-Ro Lee 《Journal of Electronic Materials》2002,31(4):327-331
We have investigated the growth characteristics of n-Al0.15Ga0.85N:Si/GaN and the electronic properties of Au/n-Al0.15Ga0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al0.15Ga0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure
of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al0.15Ga0.85N epilayer, which was grown without any intentional flow of SiH4. However, many cracks are observed in the n-Al0.15Ga0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al0.15Ga0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation
exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al0.15Ga0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling
components and thermionic emission influence the current transport at the Au/n-Al0.15Ga0.85N:Si barrier when Si incorporation becomes higher. 相似文献
6.
Thin Ca films were evaporated on Si(1 1 1) under UHV conditions and subsequently annealed in the temperature range 200–650 °C. The interdiffusion of Ca and Si was examined by ex situ Auger depth profiling. In situ monitoring of the Si 2p core-level shift by X-ray photoemission spectroscopy (XPS) was employed to study the silicide formation process. The formation temperature of CaSi2 films on Si(1 1 1) was found to be about 350 °C. Epitaxial growth takes place at T≥400 °C. The morphology of the films, measured by atomic force microscopy (AFM), was correlated with their crystallinity as analyzed by X-ray diffraction (XRD). According to measurements of temperature-dependent I–V characteristics and internal photoemission the Schottky-barrier height of CaSi2 on Si(1 1 1) amounts to qΦBn=0.25 eV on n-type and to qΦBp=0.82 eV on p-type silicon. 相似文献
7.
We obtain upper bounds for the tail distribution of the first nonnegative sum of a random walk and for the moments of the overshoot over an arbitrary nonnegative level if the expectation of jumps is positive and close to zero. In addition, we find an estimate for the expectation of the first ladder epoch. 相似文献
8.
L. Verger J. P. Bonnefoy F. Glasser P. Ouvrier-Buffet 《Journal of Electronic Materials》1997,26(6):738-744
There has been considerable recent progress in II-VI semiconductor material and in methods for improving performance of the
associated radiation detectors. New high resistivity CdZnTe material, new contact technologies, new detector structures, new
electronic correction methods have opened the field of nuclear and x-ray imaging for industrial and medical applications.
The purpose of this paper is to review new developments in several of these fields. In addition, we will present some recent
results at LETI concerning first the CdTe 2-D imaging system (20 × 30 mm2 with 400 × 600 pixels) for dental radiology and second the CdZnTe fast pulse correction method applied to a 5 × 5 × 5 mm3 CdZnTe detector (energy resolution = 5% for detection efficiency of 85% at 122 keV) for medical imaging. 相似文献
9.
10.
在实测和分析32、14.6、12.5和9.5mm波段大气衰减的基础上,研究了大气衰减随仰角变化的规律;讨论了仰角为3~90°时计算大气衰减的简化计算公式;给出了大气等效高度与地面水汽密度的关系式,对大气衰减和等效高度的实测值与理论值进行了比较和分析. 相似文献