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An accurate and novel small-signal equivalent circuit model for GaN high-electron-mobility transistors (HEMTs) is proposed, which considers a dual-field-plate (FP) made up of a gate-FP and a source-FP. The equivalent circuit of the overall model is composed of parasitic elements, intrinsic transistors, gate-FP, and source-FP networks. The equivalent circuit of the gate-FP is identical to that of the intrinsic transistor. In order to simplify the complexity of the model, a series combination of a resistor and a capacitor is employed to represent the source-FP. The analytical extraction procedure of the model parameters is presented based on the proposed equivalent circuit. The verification is carried out on a 4 × 250 μm GaN HEMT device with a gate-FP and a source-FP in a 0.45 μm technology. Compared with the classic model, the proposed novel small-signal model shows closer agreement with measured S-parameters in the range of 1.0 to 18.0 GHz. 相似文献
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Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate
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A novel Al Ga N/Ga N high electron mobility transistor(HEMT) with a source-connected T-shaped field-plate(ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate(ST-FP) is composed of a source-connected field-plate(S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP(S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications. 相似文献
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Simulation research on offset field-plate used as edge termination in 4H-SiC merged PiN-Schottky diodes
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A new structure of 4H--silicon carbide (SiC) merged
PiN-Schottky (MPS) diodes with offset field-plate (FP) as edge
termination is developed. To understand the influences of 4H--SiC
MPS diodes with offset FP on the characteristics, simulations have
been done by using ISE TCAD. Related factors of offset FP have been
studied as well to optimise the reverse characteristics of 4H--SiC
MPS diodes. The simulation results show that the device using offset
FP can create a higher blocking voltage under reverse bias as
compared with that using field guard rings. Besides, the offset FP
does not cause any extra steps in the manufacture of MPS diodes. 相似文献
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提出了一种采用肖特基漏极(SD)与场板相结合、实现硅基垂直MOSFET器件反向阻断应用的技术。基于该技术,采用二维仿真提出并研究了两种新型垂直MOSFET器件,即带有垂直场板(VFP)的SD-VFP-MOS器件和带有倾斜场板(SFP)的SD-SFP-MOS器件。相比采用肖特基漏极的MOSFET (SD-MOS)和采用超结和肖特基漏极的MOSFET(SD-SJ-MOS),所提出的SD-VFP-MOS,尤其是SD-SFP-MOS,反向击穿电压有显著提高,且几乎不影响导通特性。开展了器件的开态电流密度、关态电势分布、关态电流密度和电场分布分析,揭示了VFP和SFP提高器件反向阻断能力的内在机理。详细讨论了场板结构参数对器件反向击穿电压和场板效率的影响,研究结果对于SD-VFP-MOS和SD-SFP-MOS的设计具有重要意义。 相似文献
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由于AlGaN/GaN HEMT的几何结构以及很强的极化效应,柵漏区域的电场很大,以至于电子可以从柵隧穿到AlGaN表面.隧穿的电子在表面累积,导致柵下耗尽区的电子向漏端延伸,从而引起漏极电流的下降.文中采用应力测试方法,研究了未钝化、钝化以及场板三种结构的AlGaN/GaN HEMT 的电流崩塌程度.实验结果表明,钝化隔断了电子从柵隧穿到AlGaN表面的通道,场板结构能够有效降低柵边缘电场,均减少了电子从柵隧穿到表面陷阱的几率,从而使虚柵的作用减弱,有效地抑制了电流崩塌效应. 相似文献
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由于AlGaN/GaNHEMT的几何结构以及很强的极化效应,栅漏区域的电场很大,以至于电子可以从栅隧穿到AlGaN表面.隧穿的电子在表面累积,导致栅下耗尽区的电子向漏端延伸,从而引起漏极电流的下降.文中采用应力测试方法,研究了未钝化、钝化以及场板三种结构的AlGaN/GaNHEMT的电流崩塌程度.实验结果表明,钝化隔断了电子从栅隧穿到AlGaN表面的通道,场板结构能够有效降低栅边缘电场,均减少了电子从栅隧穿到表面陷阱的几率,从而使虚栅的作用减弱,有效地抑制了电流崩塌效应. 相似文献
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报道了采用双场板设计的GaAs PHEMT器件,该器件栅长为0.5μm,工作电压28V,在2GHz下饱和输出功率2.18W/mm,功率附加效率PAE=67%。 相似文献
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We present an AlInN/AlN/GaN MOS–HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al2O3 dielectric layer and a 0.3 μm field-plate (FP)-MOS--HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS--HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS--HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance--voltage (C--V) curve of the FP-MOS--HEMT demonstrates a high-quality interface of Al2O3/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μ m and a negligible double-pulse current collapse is achieved in the FP-MOS--HEMT. This is attributed to the adoption of an ultra-thin Al2O3 gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al2O3 FP-MOS--HEMT to deliver high currents and power densities in high power microwave technologies. 相似文献
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