关于硬件木马电路检测技术分析及发展趋势探讨

本文结合HTH电路的复杂性等特征分析与实际应用现状,研究了HTH电路的具体检测技术方法并对当前热点技术进行对比分析,探讨了HTH电路检测方法的技术发展趋势。     

基于随机光栅的可调谐随机光纤激光器

提出一种基于随机光栅与高反射布拉格光栅(FBG)相结合的可调谐随机光纤激光器。利用980nm泵浦光源泵浦一段7m长的掺铒光纤(EDF)进行增益放大,由随机光栅提供随机反馈。随机光栅长7cm,具有约10000个折射率修改点,这些点由飞秒激光逐点写入,并沿光纤方向随机分布,两点相邻间隔小于10μm。同时,利用中心波长为1548nm的高反射FBG来组成半开放腔结构,实现了随机激光的输出。实验测得的泵浦阈值功率仅为18mW,斜率效率高达13.2%,并通过改变FBG的中心波长,实现了输出激光波长的可调谐,调谐范围为4.45nm(1548.04~1552.49nm)。得益于半开放式激光腔的设计和EDF的高增益,整个系统具有阈值低、效率高、结构简单等优点。     

On the capacity of the state‐dependent interference relay channel

This paper considers the state‐dependent interference relay channel (SIRC) in which one of the two users may operate as a secondary user and the relay has a noncausal access to the signals from both users. For discrete memoryless SIRC, we first establish the achievable rate region by carefully merging Han‐Kobayashi rate splitting encoding technique, superposition encoding, and Gelfand‐Pinsker encoding technique. Then, based on the achievable rate region that we derive, the capacity of the SIRC is established in many different scenarios including (a) the weak interference regime, (b) the strong interference regime, and (c) the very strong interference regime. This means that our capacity results contain all available known results in the literature. Next, the achievable rate region and the associated capacity results are also evaluated in the case of additive Gaussian noise. Additionally, many numerical examples are investigated to show the value of our theoretical derivations.     

The single-polarization filter composed of gold-coated photonic crystal fiber

A single-polarization filter comprising a gold-coated photonic crystal fiber based on surface plasmon resonance is designed and investigated. The pattern matching and coupled polarization characteristics analyzed by the full-vector finite element method (FEM) and losses at 1,540 nm are achieved to 1,016.01739 dB/cm (x-pol core mode) and 33.81917 dB/cm (y-pol core mode). The crosstalk (CT) value of the 1,540 nm band is ?853.12653 dB for fiber length $L=1,000\mathrm{\mu }\text{m}$ and the bandwidth is 850 nm. The working wavelength of the filter ranges from 1,280 nm to 1,540 nm by varying the diameter of outer air holes ($d_1$), the diameter of inner air holes ($d_4$), the metal film thickness (t), as well as the liquid refractive index (n).     

Research on the identification performance of UHF RFID system considering the correlation of cascaded channel

The identification rate of UHF RFID system was restricted by multipath propagation effects.The system identification performance was studied considering the correlation coefficient between forward and reverse channels.Based on the generalized Rician fading channel model,the analytical expression of identification rate was derived under independent,full correlation and correlation cases.Compared with the existing analysis,the proposed uniform calculation formula of identification rate was for any correlation coefficient and kinds of channel conditions.The numerical computation and Monte-carlo simulations show that the influences of different correlation coefficients,channel conditions,sensitivity and distance on the identification rate.     

继电保护中多路模拟量采集系统的设计

介绍了一种基于高性能浮点DSP芯片TMS320C32、CPLD芯片XC95288和A/D采样芯片AD976组成的多路采集系统的工作原理以及设计方法。通过对第一路施加特殊的电压量,在CCS开发环境下读取采样缓冲区的值,并利用Matlab对采样数据进行了全波傅氏变换。此外,该系统已在继电保护中得到广泛应用,实践表明,该系统能较好地解决多路模拟量的采集,并确保了采样数据的安全可靠性。     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

Small‐Sized High‐Power PIN Diode Switch with Defected Ground Structure for Wireless Broadband Internet

This letter presents a small‐sized, high‐power single‐pole double‐throw (SPDT) switch with defected ground structure (DGS) for wireless broadband Internet application. To reduce the circuit size by using a slow‐wave characteristic, the DGS is used for the quarter‐wave (°/4) transmission line of the switch. To secure a high degree of isolation, the switch with DGS is composed of shunt‐connected PIN diodes. It shows an insertion loss of 0.8 dB, an isolation of 50 dB or more, and power capability of at least 50 W at 2.3 GHz. The switch shows very similar performance to the conventional shunt‐type switch, but the circuit size is reduced by about 50% simply with the use of DGS patterns.     

光纤布拉格光栅的无源温度补偿

分析了通过施加应变补偿光纤布拉格光栅(FBG)中心波长随温度漂移的原理，给出了一种新型的无源温度补偿的方法和相应的实验结果。该方法采用了两种不同热膨胀系数的金属，对光栅先施加预应变。在0-60℃范围内，中心波长仅偏移了0．02nm。