Electric parameters of photosystem II particles — electric light scattering study

Electric light scattering and microelectrophoresis were applied to investigate the electric moments (permanent dipole moment and electric polarizability and electrophoretic mobility of envelope-free chloroplasts and photosystem II (PS II particles. The effect of the removal of the extrinsic polypeptides (18, 24 and 33 kDa) on the electric moments was also studied. A significant difference was observed between the orientation behaviour of chloroplasts and PS II preparations. The data indicate that the permanent and induced dipole moments contribute to the orientation of the PS II particles, whereas chloroplasts possess induced dipole moment only.

NaCl and Tris treatments of PS II preparations influence both the transverse permanent dipole moment and the electric polarizability of PS II particles. The increase in the electrophoretic mobility of PS II particles on removal of the extrinsic proteins corresponds to an increase in the electric polarizability value, demonstrating its interfacial nature.     

MIMO信号检测中软信息计算的简化方法

编码的多入多出（MIMO）迭代接收技术,是一种高频谱利用率、高性能的接收技术。本文对这种迭代接收机进行了分析。为便于硬件实现,利用QAM调制的特性,对MIMO信号检测中的软信息计算提出了简化方法。仿真结果表明,简化方法对系统性能影响很小。     

测量光纤外腔Fabry-Perot干涉仪的白光干涉术

提出了一种基于白光干涉术测量低锐度光纤外腔Fabry Perot干涉仪（EFPI）的方法用宽带光源注入F P腔,在接收端用一高锐度的可调谐光纤F P滤波器对EFPI的反射光谱进行扫描,获得了周期性变化的光谱输出为了测量出EFPI的腔长,对光谱信号进行傅里叶变换,得到光谱的周期,由此求出EFPI的绝对腔长证明了用低锐度EFPI的测量准确度由腔长决定F P腔越长,测量准确度越高在腔长分别是200 μm,400 μm和600 μm时,测量的腔长与实际腔长相同.     

基于光纤智能夹层传感结构的应力测量研究

制作了一种模块化的光纤传感夹层,对夹层内的光纤传感器的应力特性进行了实验研究。分析了应变对传感系数的影响,对埋入到光纤智能夹层中的两种光纤传感器的输出特性进行了比较。实验结果表明:光纤Bragg光栅传感器的波长漂移与应变之间具有理想的线性关系,但应变灵敏度由1.2pm/με降至1.15pm/με;由于制作工艺的局限,对于非本征F-P光纤传感器,当应变达到350με后,应变与载荷具有较好的线性响应。与非本征F-P光纤传感器相比,光纤Bragg光栅传感器是光纤智能夹层首选的应变传感器。将埋入了Bragg光栅传感器的智能夹层粘贴于某型飞机的翼-身连接构件内部进行监测,实验结果为光纤智能夹层应用于复合材料结构的应变监测提供了参考。     

EFPI腔内损耗对干涉条纹可见度的影响

利用多光束干涉原理和几何光学方法,分析了非本征F-P干涉仪(EFPI)腔内损耗对干涉仪的影响,详细推导了EFPI腔长与反射光干涉条纹可见度之间的关系,确定了在可测条纹可见度的要求下EFPI腔长的范围.     

混沌激光对非本征光导型探测器的混沌干扰机制研究

 在唯象理论和二能级模型下，根据级联非线性系统原理，通过求解载流子输运动力学方程的Lyapunov指数，对混沌激光辐照下非本征光电导的混沌干扰机制进行了研究。结果表明：混沌激光能导致非本征光电导本身的混沌现象。     

Almost contact Riemannian three-manifolds with Reeb flow symmetry

In this paper we give a complete classification of simply connected homogeneous almost α-Kenmotsu three-manifolds M whose Ricci operator is invariant along the Reeb flow. We get this classification by using the Gaussian and the extrinsic curvature associated with the canonical foliation of M.     

Almost Extrinsically Homogeneous Submanifolds of Euclidean Space

Consider a closed manifold M immersed in R^m. Suppose that the trivial bundle M × R^m = T M ⊗ ν M is equipped with an almost metric connection ~ ∇ which almost preserves the decomposition of M × R^m into the tangent and the normal bundle. Assume moreover that the difference Γ = ∂~∇ with the usual derivative ∂ in R^m is almost ~∇-parallel. Then M admits an extrinsically homogeneous immersion into R^m. Mathematics Subject Classifications (2000): 53C20, 53C24, 53C30, 53C42, 53C40.     

Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy

Based on our previous work,the influence of annealing conditions on impurity species in in-situ arsenic (As)-doped Hg 1 x Cd x Te (x ≈ 0.3) grown by molecular beam epitaxy has been systematically investigated by modulated photoluminescence spectra.The results show that (i) the doped-As acting as undesirable shallow/deep levels in as-grown can be optimized under proper annealing conditions and the physical mechanism of the disadvantage of high activation temperature,commonly assumed to be more favourable for As activation,has been discussed as compared with the reports in the As-implanted HgCdTe epilayers (x ≈ 0.39),(ii) the density of V Hg has an evident effect on the determination of bandgap (or composition) of epilayers and the excessive introduction of V Hg will lead to a short-wavelength shift of epilayers,and (iii) the V Hg prefers forming the V Hg-As Hg complex when the inactivated-As (As Hg or related) coexists in a certain density,which makes it difficult to annihilate V Hg in As-doped epilayers.As a result,the bandedge electronic structures of epilayers under different conditions have been drawn as a brief guideline for preparing extrinsic p-type epilayers or related devices.     

Electronic transport in LCMO/BTO composites

A series of (1 ? x)La_0.67Ca_0.33MnO₃/(x)BaTiO₃ composites has been synthesized by the solid state route. Microstructural and transport studies on these samples show a complete immiscibility between metallic ferromagnet, La_0.67Ca_0.33MnO₃ (LCMO) and insulating ferroelectric, BaTiO₃ (BTO). Temperature dependent electrical transport studies show evidence of both intrinsic and extrinsic colossal magnetoresistance (CMR) effects. Inclusion of BTO in LCMO phase results in high resistive samples with a metal-insulator transition at temperature T_{p 1} originating from intrinsic effect and another dominant metal-insulator transition at temperature T_{p 2} caused because of extrinsic effect. T_{p 2} decreases up to a certain percentage of BTO content above which this trend of variation is reversed.