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1.
铝互连线的电迁移问题历来是微电子产业的研究热点,其面临的电迁移可靠性挑战也是芯片制造业最持久和最重要的挑战之一.从20世纪90年代开始,超深亚微米(特征尺寸≤0.18 μm)铝互连技术面临了更加复杂的电迁移可靠性问题.从电迁移理论出发,分析概括了铝互连电迁移问题的研究方法,总结了上世纪至今关于铝互连电迁移问题的主要经验;最后结合已知的结论和目前芯片制造业现状,分析了当前超深亚微米铝互连线电迁移可靠性挑战的原因和表现形式,提出了解决这些问题的总方向.
关键词:
电迁移
铝互连
微结构 相似文献
2.
As IC devices scale down to the submicron level, the resistance-capacitance (RC) time delays are the limitation to circuit
speed. A solution is to use low dielectric constant materials and low resistivity materials. In this work, the influence of
underlying barrier Ta on the electromigration (EM) of Cu on hydrogen silsesquioxane (HSQ) and SiO2 substrates was investigated. The presence of a Ta barrier not only improves the adhesion between Cu and dielectrics, but
also enhances the crystallinity of Cu film and improves the Cu electromigration resistance. The activation energy obtained
suggests a grain boundary migration mechanism and the current exponent calculated indicates the Joule heating effect. 相似文献
3.
Mass transport due to electromigration can be estimated if the diffusion coefficientD and the electromigration effective charge numberZ* are known. Neutron activated tracer scanning method determine the radioactivity at different positions. An automatic scanning
system for determining the radioactive concentration profiles developed using a microprocessor is described in this paper.
Using the radioactive concentration profiles the electromigration shift is determined. From this shift the electromigration
effective charge numberZ* is calculated. The system developed was tested for tin thin films. 相似文献
4.
Lämmerhofer M 《Journal of chromatography. A》2005,1068(1):31-57
A review on the advantages, peculiarities, and the potential of enantioselective capillary electrochromatography (CEC) in nonaqueous media is presented. Some fundamentals on CEC with particular focus on enantioselective CEC are discussed. The strategies, concepts, preferentially utilized chiral selectors and column technologies that have been utilized to succeed in highly efficient enantiomer separations by nonaqueous CEC are described thoroughly. 相似文献
5.
6.
Arthur J. Learn 《Journal of Electronic Materials》1974,3(2):531-552
An investigation of electromigration-induced failure in aluminum alloy films, with the major emphasis on aluminum-copper-silicon,
was conducted. Flash evaporation was utilized for alloy deposition and yielded aluminum-copper films having electromigration
resistance comparable to that of such films prepared by other techniques. Results for aluminum-copper-silicon and aluminum-copper
were similar indicating the passive role of silicon in the presence of copper. Additions of four weight percent copper resulted
in near-optimum electromigration resistance. In addition, hot-substrate deposition was beneficial in attaining greater lifetime.
For films deposited on unheated substrates, or having lower copper contents, heat treatment seriously degraded electromigration
resistance. Heat treatment effects were considered to be a consequence of copper redistribution. Lifetime decrease at large
copper contents and possible saturation at large thicknesses were interpreted in terms of clustering of CuAl2 precipitates. The superior reliability of copper-alloyed metallization when compared with aluminum or aluminum-silicon was
clearly demonstrated. Lifetime improvement could be accounted for by the increased activation energy for the failure process
in the aluminum-copper alloys. 相似文献
7.
The 1 /fα noise was measured on a variety of Al-based thin metal films with widely varying microstructure using an ac bridge technique.
The magnitude of the current noise in response to a small, non-destructive ac signal was found to vary several orders of magnitude
between 0.01 and 10 Hz and was correlated to the microstructural differ-ences of the films. These differences have a strong
affect on film lifetimes as measured in an accelerated electromigration test. Variation in microstructure was accomplished
by different deposition temperatures and annealing parameters, and verified using TEM micrographs. Following fabrication,
the current noise magnitude was measured and found to be sensitive to film width and grain size. The use of this technique
to discriminate differences in film microstructure is discussed along with the correlations between ex-cess noise and the
quality of the thin film as a metallic interconnection. 相似文献
8.
电迁移致SnAgCu微焊点强度退化及尺寸效应研究 总被引:2,自引:1,他引:1
在100℃温度下,对直径为300μm、高度为100,200和300μm的Sn-3.0Ag-0.5Cu钎料微焊点施加密度为1×104A/cm2的直流电流。通电48h后,利用DMA对电迁移作用后微焊点拉伸强度的变化进行了研究。结果表明,电迁移作用导致微焊点拉伸强度明显退化,且退化程度随微焊点高度的减小而减弱。其中,高度为300μm的微焊点的平均拉伸强度由初始态的44.4MPa降至27.8MPa,下降了37.4%。电迁移还导致微焊点的断裂由延性变为延性与脆性相结合的模式。 相似文献
9.
As the minimum feature size of interconnect lines decreases below 0.5 urn, the need to control the line microstructure becomes
increasingly important. The alloy content, deposition process, fabrication method, and thermal history all determine the microstructure
of an interconnect, which, in turn, affects its performance and reliability. The motivation for this work was to characterize
the microstructure of various sputtered Al-Pd alloys (Al-0.3wt.%Pd, Al-2Cu-0.3Pd, and Al-0.3Nb-0.3Pd) vs sputtered Al-Cu control
samples (Al-0.5Cu and Al-2Cu) and to assess the role of grain size, mechanical stress, and crystallographic texture on the
electromigration behavior of submicrometer wide lines. The grain size, mechanical stress, and texture of blanket films were
measured as a function of annealing. The as-deposited film stress was tensile and followed a similar stress history on heating
for all of the films; on cooling, however, significant differences were observed between the Al-Pd and Al-Cu films in the
shape of their stress-temperature-curves. A strong (111) crystallographic texture was typically found for Al-Cu films deposited
on SiO2. A stronger (111) texture resulted when Al-Cu was deposited on 25 nm titanium. Al-0.3Pd films, however, exhibited either
a weak (111) or (220) texture when deposited on SiO2, which reverted to a strong (111) texture when deposited on 25 nm titanium. The electromigration lifetimes of passivated,
≈0.7 μm wide lines at 250°C and 2.5 × 106 A/cm2 for both single and multi-level samples (separated with W studs) are reported. The electromigration behavior of Al-0.3Pd
was found to be less dependent on film microstructure than on the annealing atmosphere used, i.e. forming gas (90% N2-10%H2) annealed Al-0.3Pd films were superior to all of the alloys investigated, while annealing in only N2 resulted in poor lifetimes. 相似文献
10.
将晶核析出的Avrami 方程应用于描述超大规模集成电路中金属Al薄膜互连电迁移过程中电阻的演变. 根据电子散射理论,晶界电阻主要起源于晶界处空位或者空洞对电子的散射. 为了描述这些离子的特征,引入了自由体积的概念,将晶界处电子散射这个复杂的过程简化用自由体积的有效散射截面来描述,从而建立了自由体积与电阻变化的定量关系,统一描述了电迁移过程中不同阶段的电阻变化. 数值模拟结果表明,在第一个空洞成核时刻电阻会发生急剧变化,这一结果已被实验所证实.
关键词:
电迁移
Al互连
电阻变化 相似文献