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1.
Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour. 相似文献
2.
Degradation of pyrene in soil in a net-to-net pulsed discharge plasma (PDP) system was reviewed. Effect of main chemical parameters, including air flow rate, pyrene concentration, initial pH and soil moisture content on pyrene degradation was examined. The obtained results show that 87.9% of pyrene could be removed under the condition of 60 min reaction; increasing of air flow rate within 1 L min−1 was favorable for degradation; pyrene removal was decreased with the increase of initial pyrene concentration; oxidation of pyrene was more evident in acidic soil; enhancement of soil moisture content has no benefit on pyrene degradation. 相似文献
3.
Plasma-assisted flow control is of high industrial interest, but practical applications at full scale require a large surface of interaction. Nanosecond pulsed Dielectric Barrier Discharge (DBD) have demonstrated promising results of flow control, but their interacting region is limited to only a few cm2. In this paper, the conditions to extend a surface nanosecond DBD are documented. It is shown that a sliding discharge regime can fully fill an inter-electrode distance of 40 mm. This discharge regime promotes the formation of two hemispheric pressure waves originating from both air-exposed electrodes while an horizontal region of pressure gradient is also observed. 相似文献
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5.
高功率脉冲水中放电的应用及其发展 总被引:7,自引:0,他引:7
首先介绍了高功率脉冲水下放电的机理,然后综合论述了其应用和研究的状况,从较为成熟的脉冲水处理技术到医疗领域的ESWL应用技术,以及在脉冲电场食品杀菌和水下目标探测方面的最新发展和研究,最后指出了高功率脉冲电技术应用前景以及进行更系统和深入研究的必要性。 相似文献
6.
Shufeng Zuo 《Applied Surface Science》2006,253(5):2508-2514
Al-pillared clays supported rare earths (RE/Al-PILC) are prepared and used as supports of palladium catalysts for deep oxidation of low concentrations of benzene (130-160 ppm). The supports and catalysts are characterized by X-ray powder diffraction (XRD), FT-IR, BET, transmission electron microscopy (TEM) and temperature-programmed reduction (H2-TPR). The results show that Al-pillaring results in a strong increase in the basal spacing (d0 0 1) from about 1.2 to 1.8 nm, and an increase in the BET surface area from 63.6 (±3.2) to 238.8 (±11.9) m2/g. Activity tests of deep oxidation of low concentration benzene show catalysts supported on Al-PILC and RE/Al-PILC are obviously more active than that on raw clay. Pd/6% Ce/Al-PILC, in particular, can catalyze the complete oxidation of low concentration benzene at a temperature as low as about 290 °C. 相似文献
7.
A convective flow CO laser composed of polytetrafluoroethylene discharge tubes, nickel–chromium steel components, a cupric heat exchanger and other components is described. Operating in liquid nitrogen condition, output power of 60 W has been obtained from a non-selective cavity. 相似文献
8.
通过对镍氢电池性能的研究,给出了一个应用ISA总线技术构建的、基于DELPHI编程平台的镍氢电池管理系统的设计方案,重点介绍了该系统的软件技术和实现方法。 相似文献
9.
研究了不同衬底-阴极距离、直流电压和H2流量对a-CH薄膜沉积速率的影响。结果表明:衬底-阴极距离必须大于0.5cm,随着该距离的增加,薄膜的沉积速率减少;直流电压达550V时沉积速率最大;随着H2含量的增加,CH4含量相对减少,沉积速率随之降低。用AFM观察了以该方法制得的448.4nm CH薄膜的表面形貌,表面粗糙度约为10nm。最后测出了不同条件下CH薄膜的UV-VIS谱,由此可以计算得到薄膜的禁带宽度及折射率。 相似文献
10.
光刻胶灰化工艺与深亚微米线条的制作 总被引:5,自引:1,他引:4
随着器件尺寸的缩小,细线条的制作成为很关键的工艺,普通光学光刻已接近其分辨率的极限,而电子束光刻和X射线光刻技术复杂、费用昂贵。本文对光刻胶灰化工艺进行了分析和研究,并应用此工艺进行了深亚微米线条的制作,在普通光学光刻机上制作出宽度小于0.25μm细线条。我们已将此工艺成功地应用在深亚微米MOSFET的制作中。 相似文献