Structural Aspects of P2-Type Na0.67Mn0.6Ni0.2Li0.2O2 (MNL) Stabilization by Lithium Defects as a Cathode Material for Sodium-Ion Batteries

A known strategy for improving the properties of layered oxide electrodes in sodium-ion batteries is the partial substitution of transition metals by Li. Herein, the role of Li as a defect and its impact on sodium storage in P2-Na_0.67Mn_0.6Ni_0.2Li_0.2O₂ is discussed. In tandem with electrochemical studies, the electronic and atomic structure are studied using solid-state NMR, operando XRD, and density functional theory (DFT). For the as-synthesized material, Li is located in comparable amounts within the sodium and the transition metal oxide (TMO) layers. Desodiation leads to a redistribution of Li ions within the crystal lattice. During charging, Li ions from the Na layer first migrate to the TMO layer before reversing their course at low Na contents. There is little change in the lattice parameters during charging/discharging, indicating stabilization of the P2 structure. This leads to a solid-solution type storage mechanism (sloping voltage profile) and hence excellent cycle life with a capacity of 110 mAh g^-1 after 100 cycles. In contrast, the Li-free compositions Na_0.67Mn_0.6Ni_0.4O₂ and Na_0.67Mn_0.8Ni_0.2O₂ show phase transitions and a stair-case voltage profile. The capacity is found to originate from mainly Ni³⁺/Ni⁴⁺ and O^2-/O^2-δ redox processes by DFT, although a small contribution from Mn⁴⁺/Mn⁵⁺ to the capacity cannot be excluded.     

Pectic Galactan Polysaccharide-Based Gene Delivery System for Targeting Neuroinflammation

Treating neuroinflammation-related injuries and disorders through manipulation of neuroinflammation functions is being heralded as a new therapeutic strategy. In this study, a novel pectic galactan (PG) polysaccharide based gene therapy approach is developed for targeting reactive gliosis in neuroinflammation. Galectin-3 (Gal-3) is a cell protein with a high affinity to β-galactoside sugars and is highly expressed in reactive gliosis. Since PG carries galactans, it can target reactive gliosis via specific carbohydrate interaction between galactan and Gal-3 on the cell membrane, and therefore can be utilized as a carrier for delivering genes to these cells. The carrier is synthesized by modifying quaternary ammonium groups on the PG. The resulting quaternized PG (QPG) is found to form complexes with plasmid DNA with a mean diameter of 100 nm and have the characteristics required for targeted gene therapy. The complexes efficiently condense large amounts of plasmid per particle and successfully bind to Gal-3. The in vivo study shows that the complexes are biocompatible and safe for administration and can selectively transfect reactive glial cells of an induced cortical lesion. The results confirm that this PG-based delivery system is a promising platform for targeting Gal-3 overexpressing neuroinflammation cells for treating neuroinflammation-related injuries and neurodegenerative diseases.     

Interlayer Engineering of Molybdenum Trioxide toward High‐Capacity and Stable Sodium Ion Half/Full Batteries

Orthorhombic molybdenum trioxide (MoO₃) is one of the most promising anode materials for sodium‐ion batteries because of its rich chemistry associated with multiple valence states and intriguing layered structure. However, MoO₃ still suffers from the low rate capability and poor cycle induced by pulverization during de/sodiation. An ingenious two‐step synthesis strategy to fine tune the layer structure of MoO₃ targeting stable and fast sodium ionic diffusion channels is reported here. By integrating partially reduction and organic molecule intercalation methodologies, the interlayer spacing of MoO₃ is remarkably enlarged to 10.40 Å and the layer structural integration are reinforced by dimercapto groups of bismuththiol molecules. Comprehensive characterizations and density functional theory calculations prove that the intercalated bismuththiol (DMcT) molecules substantially enhanced electronic conductivity and effectively shield the electrostatic interaction between Na⁺ and the MoO₃ host by conjugated double bond, resulting in improved Na⁺ insertion/extraction kinetics. Benefiting from these features, the newly devised layered MoO₃ electrode achieves excellent long‐term cycling stability and outstanding rate performance. These achievements are of vital significance for the preparation of sodium‐ion battery anode materials with high‐rate capability and long cycling life using intercalation chemistry.     

Study of metal assisted anisotropic chemical etching of silicon for high aspect ratio in crystalline silicon solar cells

Textured surface is commonly used to enhance the efficiency of silicon solar cells by reducing the overall reflectance and improving the light scattering. In this study, a comparison between isotropic and anisotropic etching methods was investigated. The deep funnel shaped structures with high aspect ratio are proposed for better light trapping with low reflectance in crystalline silicon solar cells. The anisotropic metal assisted chemical etching (MACE) was used to form the funnel shaped structures with various aspect ratios. The funnel shaped structures showed an average reflectance of 14.75% while it was 15.77% for the pillar shaped structures. The average reflectance was further reduced to 9.49% using deep funnel shaped structures with an aspect ratio of 1:1.18. The deep funnel shaped structures with high aspect ratios can be employed for high performance of crystalline silicon solar cells.     

Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

Evolution of Local Structural Ordering and Chemical Distribution upon Delithiation of a Rock Salt–Structured Li1.3Ta0.3Mn0.4O2 Cathode

Lithium‐rich disordered rock‐salt oxides have attracted great interest owing to their promising performance as Li‐ion battery cathodes. While experimental and theoretical efforts are critical in advancing this class of materials, a fundamental understanding of key property changes upon Li extraction is largely missing. In the present study, single‐crystal synthesis of a new disordered rock‐salt cathode material, Li_1.3Ta_0.3Mn_0.4O₂ (LTMO), and its use as a model compound to investigate Li concentration–driven evolution of local cationic ordering, charge compensation, and chemical distribution are reported. Through the combined use of 2D and 3D X‐ray nanotomography, it is shown that Li removal accompanied by oxygen oxidation is correlated with the development of morphological defects such as particle cracking. Chemical heterogeneity, quantified by subparticle level distribution of Mn valence state, is minimal during Mn redox, which drastically increases upon the formation of cracks during oxygen redox. Density functional theory and bond valence sum mismatch calculations reveal the presence of local short‐range ordering in the pristine oxide, which gradually disappears along with the extraction of Li. The study suggests that with cycling the transformation into true cation–disordered state can be expected, which likely impacts the voltage profile and obtainable energy density of the oxide cathodes.     

A Multiscale-Porous Anion Exchange Membrane for Convenient and Scalable Electrokinetic Concentration of Cationic Species

A device able to electrokinetically concentrate cationic samples has many potential medical and industrial applications, but until now has remained undeveloped due to the lack of a commercial anion-permselective material leading to a prohibitively complex fabrication procedure. Herein, a novel multiscale-porous anion exchange membrane (MP-AEM) that enables the convenient and scalable electrokinetic concentration of cationic species is proposed. A mechanically enhanced multiscale-porous structure with a solid framework is realized by adopting polyester resin as an additive to overcome the intrinsic limitations of the AEM material. The scalable MP-AEM-embedded electrokinetic concentrator is devised based on the peculiar properties of the MP-AEM that for allow both ion and fluid transport. With the MP-AEM, the concentrator is fabricated in a highly streamlined manner consisting only of a simple insertion and assembly. The concentration performance of the MP-AEM-embedded electrokinetic concentrator is demonstrated with a positively charged fluorescent dye and a fluorescein-labeled protein, and the results show enrichment factors of 250 and 500, respectively. The MP-AEM makes cationic electrokinetic concentration more accessible and scalable, thereby enabling further progress in a wide range of fields.     

半导体传感器在生物分析科学中的应用(英文)

回顾了半导体生化传感器 (ISFET 和 LA PS)在医学监测、免疫检测、免疫分析、D N A 杂交以及细胞培养等方面应用的进展。为使半导体器件适用于生化检测,对其中所采用的检测手段和取得的研究结果进行了分析。展望了通过与微流体网络相结合,基于半导体传感器的实验室芯片化的可行性。     

等离子体刻蚀工艺控制模型分析

讨论了主因素分析法以及神经网络法在等离子体刻蚀工艺中的应用.结果表明主元素分析法可以实现对数据的压缩,而神经网络算法则显示出比传统的统计过程控制算法更好的准确性.     

一种高性能的新结构IGBT

提出了一种低功率损耗的新结构IGBT.该新结构的创新点在于其复合耐压层结构,该耐压层包括深扩散形成的n型缓冲层和硼注入形成的透明背发射区两部分.虽然在正常工作条件下,该新结构IGBT工作于穿通状态,但器件仍具有非穿通IGBT(NPT-IGBT)的优良特性.该新结构IGBT具有比NPT-IGBT更薄的芯片厚度,从而可以获得更好的通态压降和关断功耗之间的折衷.实验结果表明:与NPT-IGBT相比较,新结构IGBT的功率损耗降低了40%.