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1.
Effect of additive length and chemistry on the morphology of blends of conjugated thiophenes and fullerene derivative acceptor molecules
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Small molecule additives have been shown to increase the device efficiency of conjugated polymer (donor) and fullerene derivative (acceptor) based organic solar cells by modifying the morphology of the device active layer. In this paper we conduct a systematic study of how additives affect the donor‐acceptor morphology using molecular dynamics simulations of blends of thiophene‐based oligomers, mimicking poly(3‐dodecylthiophene) (P3DDT) or poly(2,2′:5′,2”‐3,3”‐didocyl‐terthiophene) (PTTT), and fullerene derivatives with additives of varying length and chemical functionalization, mimicking experimentally used additives like methyl ester additives, diiodooctane, and alkanedithiols. We find that functionalization of additives with end groups that are attracted to acceptor molecules are necessary to induce increased donor‐acceptor macrophase separation. In blends where acceptors intercalate between oligomer alkyl side chains, functionalized additives decrease acceptor intercalation. Functionalized additives with shorter alkyl segments increase acceptor macrophase separation more than additives with same chemical functionalization but longer alkyl segments. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015 , 53, 1046–1057 相似文献
2.
在分析了双极型晶体管和场效应晶体管各自的特点和不足后,介绍了一种既具有双极型晶体管较大电流容量和功率输出,又具有场效应晶体管高输入阻抗的电子器件——双极MOS场效应晶体管(BJMOSFET),同时指出体硅BJMOSFET的阳极扩散区与衬底之间存在较大的漏电流,可产生较大的寄生效应。提出了一种新型固体电子器件——基于SOI的BJMOSFET,分析了其工作原理j与体硅BJMOSFET比较,由于SOI技术完整的介质隔离避免了体硅器件中存在的大部分寄生效应,使基于SOI的BJMOSFET在体效应、热载流子效应、寄生电容、短沟道效应和闩锁效应等方面具有更优良的特性。 相似文献
3.
Yuri M. Boiko Anders Bach Jørgen Lyngaae-Jørgensen 《Journal of Polymer Science.Polymer Physics》2004,42(10):1861-1867
Films of amorphous polystyrene (PS) with a weight-average molecular weight (Mw) of 225 × 103 g/mol were bonded in a T-peel test geometry, and the fracture energy (G) of a PS/PS interface was measured at the ambient temperature as a function of the healing time (th) and healing temperature (Th). G was found to develop with (th)1/2 at Th = Tg-bulk − 33 °C (where Tg-bulk is the glass-transition temperature of the bulk sample), and log G was found to develop with 1/Th at Tg-bulk − 43 °C ≤ Th ≤ Tg-bulk − 23 °C. The smallest measured value of G = 1.4 J/m2 was at least one order of magnitude larger than the work of adhesion required to reversibly separate the PS surfaces. These three observations indicated that the development of G at the PS/PS interface in the temperature range investigated (<Tg-bulk) was controlled by the diffusion of chain segments feasible above the glass-transition temperature of the interfacial layer, in agreement with our previous findings for fracture stress development at several polymer/polymer interfaces well below Tg-bulk. Close values of G = 8–9 J/m2 were measured for the symmetric interfaces of polydisperse PS [Mw = 225 × 103, weight-average molecular weight/number-average molecular weight (Mw/Mn) = 3] and monodisperse PS (Mw = 200 × 103, Mw/Mn = 1.04) after healing at Th = Tg-bulk − 33 °C for 24 h. This implies that the self-bonding of high-molecular-weight PS at such relatively low temperatures is not governed by polydispersity. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 1861–1867, 2004 相似文献
4.
R. Grac M. Pugnet J.H. Collet B. Lambert C. De Matos H. L'Haridon A. Le Corre J.O. White 《Superlattices and Microstructures》1997,22(4):505-509
We report new results on the diffraction properties of photoinduced gratings in InGaAs/InGaAsP MQW structures. The original feature of this device is that the QWs are enclosed in an asymmetric Fabry–Perot microcavity in order to increase the diffraction efficiency. We observe oscillations in the diffraction efficiency due to resonant effects in the microcavity. The experimental spectra are compared with theory. Diffraction efficiency at 1.55 μm attains a maximum value of 2.7% at a write beam fluence of 260 μ J cm−2, and then decreases at higher fluences. We explain this phenomenon by an absorption saturation at high excitation. 相似文献
5.
We consider systems of GI/M/1 type with bulk arrivals, bulk service and exponential server vacations. The generating functions of the steady-state probabilities
of the embedded Markov chain are found in terms of Riemann boundary value problems, a necessary and sufficient condition of
ergodicity is proved. Explicit formulas are obtained for the case where the generating function of the arrival group size
is rational. Resonance between the vacation rate and the system is studied. Complete formulas are given for the cases of single
and geometric arrivals.
This revised version was published online in June 2006 with corrections to the Cover Date. 相似文献
6.
D. Xu T. Enoki T. Suemitsu Y. Umeda H. Yokoyama Y. Ishii 《Journal of Electronic Materials》1998,27(7):L51-L53
We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures,
which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved
performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different
surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively,
the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry
of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to
conduct “recess engineering” for InAlAs/InGaAs MODFETs. 相似文献
7.
B. Sadashive Gowda G.S.V.L. Narasimham M.V. Krishna Murthy 《International Journal of Heat and Fluid Flow》1997,18(6):613-624
In this paper, a mathematical model for forced-air precooling of spherical food products in bulk is developed. The foods are arranged in horizontal layers stacked one above the other to form a rectangular parallelepiped with a vertical gap in between the product layers. The foods are cooled by chilled air blown along the height of the package. The governing equations for the conduction heat transfer in the foods, simultaneous heat and mass transfer at the food-air interface and in the air stream are solved numerically using finite-difference methods. A comprehensive numerical study is performed by varying the process parameters over a wide range. Typical results showing the variation of moist air properties along the height of the package and the effect of each parameter on the process time are presented. The ranges of parameters for advantageous operation of the precooling system are identified. Correlations are obtained for the process time based on the product center and mass-averaged temperatures in terms of process parameters. 相似文献
8.
9.
Electronic properties of model quantum-dot structures in zero and finite magnetic fields 总被引:1,自引:0,他引:1
H. Saarikoski E. Räsänen S. Siljamäki A. Harju M.J. Puska R.M. Nieminen 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,26(2):241-252
We have computed electronic structures and total energies of circularly confined two-dimensional quantum dots and their lateral
dimers in zero and finite uniform external magnetic fields using different theoretical schemes: the spin-density-functional
theory (SDFT), the current-and-spin-density-functional theory (CSDFT), and the variational quantum Monte Carlo (VMC) method.
The SDFT and CSDFT calculations employ a recently-developed, symmetry-unrestricted real-space algorithm allowing solutions
which break the spin symmetry. Results obtained for a six-electron dot in the weak confinement limit and in zero magnetic
field as well as in a moderate confinement and in finite magnetic fields enable us to draw conclusions about the reliability
of the more approximative SDFT and CSDFT schemes in comparison with the VMC method. The same is true for results obtained
for the two-electron quantum dot dimer as a function of inter-dot distance. The structure and role of the symmetry-breaking
solutions appearing in the SDFT and CSDFT calculations for the above systems are discussed.
Received 16 October 2001 and Received in final form 17 January 2002 相似文献
10.
利用变温Hall测量研究了重掺杂InGaAs/InAlAs单量子阱中二维电子气,发现在量子阱中由于存在电子对称态和反对称态导致纵向电阻出现拍频现象。通过分析拍频节点位置,得到电子对称态和反对称态之间的能级间距为4meV。此外,通过迁移率谱方法和多载流子拟合过程研究了不同迁移率电子的浓度和迁移率随温度的变化关系。 相似文献