On additives, morphological evolution and dielectric breakdown in low density polyethylene

A series of low density polyethylene systems has been studied with respect to structural evolution and short-term dielectric breakdown behaviour. All materials were based upon a single polymer, that is commonly used in high voltage applications, but with different additives. In all three of these systems, multiple melting transitions were observed, as a result of molecular fractionation effects during crystallization. In the virgin polymer, a space-filling banded spherulitic morphology was found to develop at low temperatures (102 °C and below) whereas, at higher temperatures, only a few isolated axialites were observed. Inclusion of the antioxidant resulted in greatly increased nucleation densities, such that, at low temperatures, no evidence of spherulitic organisation remained. At higher temperatures, sheaf-like lamellar aggregates developed, which were much smaller and much more numerous than in the case of the virgin polymer. Further addition of dicumyl peroxide (DCP) resulted in the rapid formation of a crosslinked network at 200 °C. Some crosslinking also occurred at 150 °C, but over a much longer timescale. Where extensive crosslinking occurred prior to crystallization, the resulting gel inhibited structural development, such that only a few small, isolated sheaves were able to form at 102 °C. In view of the principal application area of this material, the breakdown strength of each of the above systems was then measured and the whole data set was analysed statistically. When structural factors were considered alongside the statistics, no clear trends emerged to indicate that either the compositional or morphological variations were reflected in the short-term electrical failure processes.     

Role of Bulk Vaporization in the Dynamics of Laser-Induced Erosion Plumes of Metals

In different regimes of exposure of metals to pulsed laser radiation, we show the role played by the liquid-drop phase formed from the target material in a laser-induced erosion plume due to bulk vaporization, in the dynamics of this plume. For some metals, the ranges of power densities of the acting laser radiation, at which the condensed-phase particles influence the passage of laser radiation to the target surface, have been determined experimentally. The mechanism of realization of a low-threshold breakdown has been revealed.     

利用电阻场板提高SOI-LIGBT的性能

通过在SOI-LIGBT中引入电阻场板和一个p-MOSFET结构,IGBT的性能得以大幅提高.p-MOSFET的栅信号由电阻场板分压得到.在IGBT关断过程中,p-MOSFET将被开启,作为阳极短路结构起作用,从而使漂移区的过剩载流子迅速消失,IGBT快速关断.而且由于电场受到电阻场板的影响,使得过剩载流子能沿着一个更宽的通道流过漂移区,几乎消去了普通SOI-LIGBT由于衬偏造成的关断的第二阶段.这两个因素使得新结构的关断时间大大减少.在IGBT的开启状态,由于p-MOSFET不导通,因此器件的开启特性几乎与普通器件一致.模拟结果表明,新结构至少能增加25%的耐压,减少65%的关断时间.     

0.18μm CMOS工艺栅极氧化膜可靠性的衬底和工艺依存性

用斜坡电压法(Voltage Ramp, V-ramp)评价了0.18μm双栅极 CMOS工艺栅极氧化膜击穿电量(Charge to Breakdown, Q_bd)和击穿电压(Voltage to Breakdown, V_bd). 研究结果表明，低压器件(1.8V)的栅极氧化膜(薄氧)p型衬底MOS电容和N型衬底电容的击穿电量值相差较小，而高压器件(3.3V)栅极氧化膜(厚氧)p衬底MOS电容和n衬底MOS电容的击穿电量值相差较大，击穿电压测试值也发现与击穿电量 关键词： 薄氧 可靠性 击穿电压 击穿电量     

激光诱导激波在氮气中的传播

实验观察了强激光脉冲击穿氮气诱发激波及其传播过程，用爆炸波模型讨论了激波的产生和传播，给出了激波传播的基本规律，对实验结果作出了满意的解释。     

Laser-induced breakdown of soda-lime glass microspheres using Nd:YAG laser

The Nd:YAG laser-induced breakdown of 20 μm glass microspheres was investigated using time-resolved optical shadow and Schlieren images. Time-resolved imaging showed the location of the initial breakdown and the shockwave motion over its first 400 μm of expansion. Measured shockwave velocities were in the range of 1–10 km/s and showed a linear dependency on laser fluence within 30 ns.     

Hydrogen analysis in solid samples by utilizing He metastable atoms induced by TEA CO2 laser plasma in He gas at 1 atm

A TEA CO₂ laser (350 mJ–1.5 J, 10.6 μm, 200 ns, 10 Hz) was focused onto a metal sub-target under He as host gas at 1 atmospheric pressure with a small amount of impurity gas, such as water and ethanol vapors. It was found that the TEA CO₂ laser with the help of the metal sub-target is favorable for generating a strong, large volume helium gas breakdown plasma at 1 atmospheric pressure, in which the helium metastable-excited state was then produced overwhelmingly. While the metal sub-target itself was never ablated. The helium metastable-excited state produced after the strong helium gas breakdown plasma was considered to play an important role in exciting the atoms. This was confirmed by the specific characteristics of the detected H emission, namely the strong intensity with low background, narrow spectral width, and the long lifetime. This technique can be used for gas and solid samples analysis. For nonmetal solid analysis, a metal mesh was introduced in front of the nonmetal sample surface to help initiation of the helium gas breakdown plasma. For metal sample, analysis can be carried out by combining the TEA CO₂ laser and an Nd–YAG laser where the Nd–YAG laser is used to ablate the metal sample. The ablated atoms from the metal sample are then sent into the region of helium gas breakdown plasma induced by the TEA CO₂ laser to be excited through the helium metastable-excited state. This technique can be extended to the analysis of other elements, not limited only to hydrogen, such as halogens.     

雪崩光电探测器的击穿效应模型分析

基于CMOS工艺制备了空穴触发的Si基雪崩探测器(APD),基于不同工作温度下器件的击穿特性,建立空穴触发的雪崩器件的击穿效应模型。根据雪崩击穿模型和击穿电压测试结果,拟合曲线得到击穿电场与温度的关系参数(dE/dT),器件在250～320 K区间内,击穿电压与温度是正温度系数,器件发生雪崩击穿为主,dV/dT=23.3 mV/K,其值是由倍增区宽度以及载流子碰撞电离系数决定的。在50～140 K工作温度下,击穿电压是负温度系数,器件发生隧道击穿,dV/dT=-58.2 mV/K,其值主要受雪崩区电场的空间延伸和峰值电场两方面因素的影响。     

Diffusion in Lorentz lattice gas automata with backscattering

The probability of first return to the initial intervalx and the diffusion tensorD _x are calculated exactly for a ballistic Lorentz gas on a Bethe lattice or Cayley tree. It consists of a moving particle and a fixed array of scatterers, located at the nodes, and the lengths of the intervals between scatterers are determined by a geometric distribution. The same values forx andD _x apply also to a regular space lattice with a fraction of sites occupied by a scatterer in the limit of a small concentration of scatterers. If backscattering occurs, the results are very different from the Boltzmann approximation. The theory is applied to different types of lattices and different types of scatterers having rotational or mirror symmetries.