Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.     

超宽带极窄脉冲设计与产生

超宽带(UWB)技术是以持续时间极短的脉冲作为传输载体进行数据通信的无线新技术。基于BJT雪崩特性,本文采用并行同时触发的工作方式,设计并产生了高重复速率的UWB脉冲电路发生器,极大地减少了时延,缩短了上升时间,提高了脉冲的幅度,并从等效电路法的观点分析计算了脉冲的特性参数,理论结果与实测结果具有较好的一致性。     

硅光电二极管激光损伤阈值随激光脉宽的变化

 对飞秒激光辐照下硅光电二极管损伤阈值进行了实验测量，对从1s到60fs不同脉宽激光辐照下硅光电二极管损伤阈值进行了讨论。实验数据表明，在1s到10ns脉宽范围内损伤所需能量密度近似而非严格地与脉宽的平方根成正比。信号分析表明硅光电二极管的损伤主要由热效应造成，而60fs激光辐照下的损伤阈值为0.1J/cm2，明显偏离普通温度分布预言的趋势。     

The Asymmetric Avalanche Process

An asymmetric stochastic process describing the avalanche dynamics on a ring is proposed. A general kinetic equation which incorporates the exclusion and avalanche processes is considered. The Bethe ansatz method is used to calculate the generating function for the total distance covered by all particles. It gives the average velocity of particles which exhibits a phase transition from an intermittent to continuous flow. We calculated also higher cumulants and the large deviation function for the particle flow. The latter has the universal form obtained earlier for the asymmetric exclusion process and conjectured to be common for all models of the Kardar–Parisi–Zhang universality class.     

主动式红外光电靶的研究

提出了采用红外光源的主动式光电靶的设计构想，用以消除传统天幕靶在对低速弹测量时，声音对测量的干扰，并设计了整个实验方案，在对静态实验结果进行分析的基础上，证明了该种方法的可行性。     

TiO2∶Mo体系的光子雪崩上转换

在 978nm激光二极管的激发下 ,Mo掺杂的TiO2 材料表现出很强的宽带上转换发光 ,该发光来源于 [MoO4]2 - 基团的激发态3T1 ,3T2 能级到基态1 A1 能级的电子跃迁 .通过研究发光强度与抽运功率的关系及上转换发光的上升时间曲线 ,发现TiO2 ∶Mo体系的上转换发光中存在着雪崩机制 ,应用转换函数理论分析了光子雪崩的产生条件和主要特征 ,理论结果和实验数据很好地符合     

Fused silica capillary tube isotachophoresis using a multichannel photodiode array detector

Isotachophoresis carried out in a 0.25 mm i.d. fused-silica capillary tube yielded high resolution, compared with that in a fluorinated ethylene-propylene polymer tube. The use of an ultraviolet-visible multichannel spectrophotometer with photodiode array as detector together with a cross flow cell (volume 0.01 μl) was investigated. The system was successfully applied to the analysis of cationic dyes such as neutral red, bismarck brown, and basic fuchsine.     

Applications of a miniaturized fluorimetric photodiode array detector for capillary liquid chromatography

A high sensitivity, multichannel fluorescence detector with small volume has been developed for capillary column liquid chromatography. Using an intensified linear photodiode array to monitor fluorescence emission, several important mixtures exhibiting native fluorescence have been examined following high efficiency separation on a capillary column. By correlating mass spectral, fluorescence spectral, and retention time data, information of potential utility in the structural elucidation of aromatic molecules contained in complex mixtures can be obtained. Examples include the separation and spectral examination of the polyaromatic compounds in samples of both biological and environmental interest.     

Fermentation characteristics and the dynamic trend of chemical components during fermentation of Massa Medicata Fermentata

As a representative of traditionally fermented Chinese medicine, Massa Medicata Fermentata (MMF) shows the functions of invigorating the spleen and stomach and promoting digestion, which plays an important role in the treatment of gastrointestinal diseases. The fermentation mechanism and the key factors that affect the quality of MMF have not been revealed yet, which has become an urgent issue that limits its clinical application. This article aims to systematically and comprehensively reveal the transformation of physical properties and the dynamic trend of chemical components including substrate components, volatile components, and lactic acid as anaerobic fermentation product during MMF fermentation. Along with obvious hyphae growth observed for MMF, the weight of MMF decreased, and the moisture and temperature increased. Through the quantified 14 components from substrate, ferulic acid increased from 45.53 ± 6.94 to 141.89 ± 78.40 μg/g, while glycosides and phenolic acids declined except caffeic acid. Also, within the 66 volatile components analyzed, alcohols and acids increased, while aldehydes and ketones decreased. Lactic acid was not detected in the fermentation substrate, but an apparent increase in lactic acid content was observed along with the increased fermentation days, resulting in 2.54 ± 0.15 mg/g on day 8. Based on the tested components, the fermentation process of MMF was discriminated into three distinct stages by principal component analysis, and an optimal fermentation time of four days was proposed. The results of this study will be of great significance to clarify the characteristics of fermentation and conduce to improving quality standards of MMF.     

雪崩光电探测器的击穿效应模型分析

基于CMOS工艺制备了空穴触发的Si基雪崩探测器(APD),基于不同工作温度下器件的击穿特性,建立空穴触发的雪崩器件的击穿效应模型。根据雪崩击穿模型和击穿电压测试结果,拟合曲线得到击穿电场与温度的关系参数(dE/dT),器件在250～320 K区间内,击穿电压与温度是正温度系数,器件发生雪崩击穿为主,dV/dT=23.3 mV/K,其值是由倍增区宽度以及载流子碰撞电离系数决定的。在50～140 K工作温度下,击穿电压是负温度系数,器件发生隧道击穿,dV/dT=-58.2 mV/K,其值主要受雪崩区电场的空间延伸和峰值电场两方面因素的影响。