全文获取类型
收费全文 | 333篇 |
免费 | 130篇 |
国内免费 | 67篇 |
专业分类
化学 | 68篇 |
晶体学 | 30篇 |
综合类 | 1篇 |
数学 | 2篇 |
物理学 | 239篇 |
无线电 | 190篇 |
出版年
2024年 | 1篇 |
2022年 | 3篇 |
2021年 | 8篇 |
2020年 | 10篇 |
2019年 | 3篇 |
2018年 | 4篇 |
2017年 | 9篇 |
2016年 | 7篇 |
2015年 | 13篇 |
2014年 | 21篇 |
2013年 | 15篇 |
2012年 | 9篇 |
2011年 | 13篇 |
2010年 | 19篇 |
2009年 | 33篇 |
2008年 | 20篇 |
2007年 | 18篇 |
2006年 | 24篇 |
2005年 | 19篇 |
2004年 | 56篇 |
2003年 | 29篇 |
2002年 | 31篇 |
2001年 | 14篇 |
2000年 | 22篇 |
1999年 | 9篇 |
1998年 | 14篇 |
1997年 | 19篇 |
1996年 | 14篇 |
1995年 | 15篇 |
1994年 | 20篇 |
1993年 | 22篇 |
1992年 | 3篇 |
1991年 | 5篇 |
1989年 | 3篇 |
1988年 | 1篇 |
1987年 | 1篇 |
1986年 | 2篇 |
1981年 | 1篇 |
排序方式: 共有530条查询结果,搜索用时 765 毫秒
1.
Resistivity-temperature characteristics of sol gel YBa2Cu3Oy samples synthesized in flowing oxygen atmosphere 下载免费PDF全文
The relationship of resistivity versus synthesizing temperature of sol gel YBa_2Cu_3O_y samples was studied when prepared under flowing oxygen conditions. A set of high-temperature ρ-T curves was obtained for the whole process. After the sample finished the test measuring, its resistivity was ρ_{300}=9.83×10^{-3 }Ω·cm at room temperature. The ρ-T curve also showed that the orthorhombic-tetragonal phase transformation of sol-gel YBa_2Cu_3O_y sample occurred at 581℃ for the sample in the rising temperature process, but at 613℃ in the cooling process, lower than that of the samples made by using the conventional powder metallurgy methods. 相似文献
2.
Si衬底上ZnSe外延膜的低压MOCVD生长 总被引:2,自引:2,他引:0
以硒化氢(H2Se)和二甲基锌为源材料,生长温度是300℃时,用低压金属有机化学气相沉积(LP-MOCVD)系统在Si(111)衬底上外延生长了ZnSe薄膜。通过X射线衍射(XRD)、扫描电子显微镜的能量色散(EDS)以及光致发光(PL)实验验证ZnSe外延膜的质量,在X射线衍射谱中只有一个强的ZnSe(111)面衍射峰,这说明外延膜是(111)取向的单晶薄膜,在能量色散谱中除了Si,Zn和Se原子外,没有观测到其他原子,说明ZnSe外延膜中杂质含量较少。ZnSe外延膜中Zn/Se原子比接近1,有较好的化学配比。在ZnSe外延膜的77K光致发光谱中没有观测到与深中心发射相关的发光峰,表明ZnSe外延膜的晶格缺陷密度较小。77K时的近带边发射峰447nm在室温时移至465nm附近。 相似文献
3.
4.
由于器件的快速退化,101.5小时似乎成了Znse基蓝绿色半导体激光器难于逾越的寿命极限。分析退化机制,发现在强电流注入的半导体激光器中,热退化具有重要影响。研究表明,用作载流子限制层的宽带Ⅱ-Ⅵ族四元合金(如ZnMgSSe)只能对ZnSe中的电子有效地限制,无法对空穴很好地限制;而对BeTe,却只能对空穴进行有效的限制,无法对电子很好地限制。这导致ZnSe(或BeTe)活性层空穴(或电子)漏电发热,引起退化。本文提出以ZnSe/BeTe超晶格为蓝绿发光层,并用包络函数理论具体计算了阱宽、垒宽对载流子能级的不同影响,考察了ZnSe、BeTe厚度比和超晶格周期对带隙、载流子限制能力的调节。为研制新型长寿命蓝绿色半导体激光器提供了一条新的途径。 相似文献
5.
采用溶胶-凝胶工艺与原位生长技术,制备了ZnSe/SiO2复合薄膜.X射线衍射分 析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1 ∶1.01—1∶1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌,结果表明复合薄 膜表面既存在尺寸约为400nm的ZnSe晶粒,也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测 量了薄膜椭偏角Ψ,Δ与波长λ的关系,采用Maxwell-Garnett有效介质理论对薄膜的光学 常数、厚度、气孔率、ZnS
关键词:
2复合薄膜')" href="#">ZnSe/SiO2复合薄膜
光学性质
椭偏光度法
荧光光谱 相似文献
6.
Structural and electrical properties of brush plated ZnTe films 总被引:1,自引:0,他引:1
Zinc telluride thin films were deposited by the brush plating technique at a potential of −0.90 V (SCE) on conducting glass and titanium substrates at different temperatures in the range 30–90 °C. The films were polycrystalline in nature with peaks corresponding to the cubic phase. Direct band gap of 2.30 eV was observed. XPS studiers indicated the formation of ZnTe. Depth profiling studies indicated a uniform distribution of Zn and Te throughout the entire thickness. EDAX measurements were made on the films and it was found that there was a slight excess of Te. The carrier concentration was found to vary from 1014–1015 cm−3 with increase of substrate temperature. The mobility was found to vary from 5 to 60 cm2 V−1 s−1. 相似文献
7.
Influence of relaxation effects on probabilities of the 2s2p35S2-2s22p2 3P1,2 intercombination transitions in NII 下载免费PDF全文
Transition probabilities of the 2s2p^3 {}^5S_2-2s^22p^2 {}^3P_{1,2} intercombination transitions in NII have been calculated by using a large-scale multiconfiguration Dirac-Fock method. In the calculation the most important effects of relativity, correlation, and relaxation are considered. From the calculated transition probabilities, the lifetime of the 2s2p^3 {}^5S_2 metastable state is derived. The result is in excellent agreement with the latest experimental result. In the meantime the influence of anomalously strong relaxation effects on probabilities of the 2s2p^3 {}^5S_2-2s^22p^2 {}^3P_{1,2} lines in NII have been found. 相似文献
8.
A fundamental research of structural defects induced upon post-growth processing of ZnSe/GaAs epilayers grown on (100) GaAs
was done by identifying defect-related reflections in the transmission electron diffraction (TED) patterns of ZnSe. Structural
artifacts, other than the as-grown defects, on this material system could be excluded according to our results. Four types
of abnormal reflections have been observed in addition to primary reflections. These extra reflections are sensitive to the
post-growth processing of ZnSe epilayers and may arise from various external effects, rather than epitaxy growth, such as
irradiation damage, surface oxidation, and surface contamination. By mapping these reflections at several major zone axes
using TED patterns, we found that the reciprocal lattice for a ZnSe crystal with structural defects consists of two distinct
types of extra reflections associated with irradiation damage. The first type of extra reflections is ±1/3{111} and the other
is ±1/2{111} corresponding to pure-edge and non-edge dislocation loops, respectively. For (100) oriented wafers, the ±1/3{111}
and ±1/2{111} reflections were observed only on two of the four possible 〈111〉 variants (i.e. [111]Zn and [111]Zn)and this phenomenon was attributed to the anisotropy of defect distribution. Extra reflections associated with surface oxidation
and contamination are also observed. The orientation relationships between a surface hexagonal ZnO and a cubic ZnSe film are
[0001]ZnO//[−111]ZnSe, and [01−11]ZnO//[011]ZnSe. The origin, characterization, and elimination of these induced reflections are discussed. With the knowledge about these
extra effects on structural defect formation, we have shown the real microstructure of ZnSe epilayers. 相似文献
9.
The employment of the Zn(Se,Te) pseudo-graded contacting scheme to p-type ZnSe-based alloys contributes directly to the recent
demonstration of room temperature continuous-wave operation of II– VI green-blue laser diodes. Contact ohmicity is maintained
down to cryogenic temperatures which enabled the investigation of electrical transport properties associated with the p-type
nitrogen-doped ZnSe, Zn(S,Se), and (Zn,Mg)(S,Se). The observation of both persistent photoconductivity and a metastable population
of holes which are in thermodynamic equilibrium with hydrogenic acceptors having reduced activation energy suggests the presence
of a DX-like behavior for holes in p-type (Zn,Mg)(S,Se). 相似文献
10.