理论研究电流注入对垂直腔面发射激光器多横模行为的影响

从包含时空变量的速率方程出发,针对弱折射率导引垂直腔面发射激光器(VCSELs),利用空间积分法分析了典型电注入参数对VCSELs多横模行为的影响,在不降低模型准确性的前提下提高了仿真效率。仿真结果表明,注入盘孔径和注入环越小、注入强度越低以及电流扩散越弱时,VCSELs更易实现单横模工作;反之,VCSELs高阶横模开始出现并呈现较强的模式竞争,引发了载流子空间烧孔效应,并导致基模强度降低。进一步得出,在环形注入方式下,高阶模式更容易出现且彼此间的竞争较盘形注入时强。     

垂直腔面发射半导体微腔激光器

评述了垂直腔面发射半导体激光器研究的最新进展,就其结构特点、应变量子阱结构、超晶格镜面和微腔效应作了简要的论述,探讨了进一步降低半导体激光器阈值的途径,介绍了新型的氧化约束型垂直腔面发射半导体激光器,并对微腔激光器中自发辐射增强效应和三维封闭腔的特性给出了描述,同时展望了该器件的应用及发展前景。     

多量子阱垂直腔面发射半导体激光器的速率方程分析

依据多量子阱垂直腔面发射半导体激光器（ＶＣＳＥＬＳ）的结构特点,并考虑到腔量子电动力学中自发辐射增强效应,建立了多量子阱ＶＣＳＥＬＳ的速率方程,并给出了其方程的严格解析解,在此基础之上,讨论了ＶＣＳＥＬＳ的稳态特性,并与普通开腔和三维封闭腔中的结果进行了比较,给出了Ｖ     

High-performance 850 nm vertical-cavity surface-emitting laser in Gigabit Ethernet network

High-performance oxide vertical-cavity surface-emitting (VCSEL) laser is fabricated, and its usefulness is demonstrated as a suitable transmitting light source at 850 nm operating wavelength for Gigabit Ethernet application. Utilization of barrier reduction layers reveals low-threshold current requirement for operation at high modulation bandwidth. The electrical and optical characteristics, measured from the fabricated VCSEL, are simulated for Gigabit Ethernet transmission. Data rates of 1.25 Gbps with a bit error rate of 10⁻¹¹ are achieved by the use of a specific multimode network simulator.     

Locking bandwidth and birefringence effects for polarized optical injection in vertical-cavity surface-emitting lasers

The aim of this paper is to investigate the effects of external optical injection taking account of polarization and electron spin properties in vertical-cavity surface-emitting lasers (VCSELs). Using external polarized injection we seek the locked phases and amplitudes of specific polarized fields in terms of injection level and frequency detuning, taking account of two kinds of distinguishable carrier density (spin-up and spin-down). For the conventional form of optical injection without taking account of spin-polarized fields there are three fundamental equations describing the carrier density, field amplitude and phase. However, by using the spin flip model (SFM), the combined effect of polarized fields along two perpendicular crystal axes and electron spin properties results in six equations. We analyse the conditions for stable locking and also the influence of birefringence effects on the stability map of detuning versus optical injection for both cases of injection polarized parallel and perpendicular to the lasing mode of the solitary VCSEL. For given values of pumping and spin relaxation rate there is a minimum birefringence rate for orthogonal injection. Above this value three regions of elliptical polarization are found in the stability map, namely “quasi-stability” (QS), “coupled limit cycle” (CLC) and “coupled chaos” (CC). The three regions of linear polarization, namely chaos, limit cycle and stability, are reduced in area compared to the case of parallel injection. For orthogonal injection it is found that increased birefringence or reduced spin relaxation rate causes the stable locking region to begin at higher injected power and frequency detuning.     

外光反馈下VCSELs噪声灵敏性的理论研究

从速率方程出发，仿真得到VCSELs在不同腔体结构、自发辐射因子和线宽限制因子情况下，相对强度噪声随外光反馈水平的变化规律。结果表明：减小电流孔径或线宽增强因子可以降低VCSELs对外光反馈的灵敏性，改变自发辐射因子对此影响不大。而传统边发射激光器不属于微腔结构，对外光反馈的抑制能力较弱。     

垂直腔面发射激光器新型结构的特性比较

通过对一种微分量子效率可以大于1的新型多有源区隧道再生应变量子阱垂直腔面发射半导体激光器(VCSELs)结构,以及由此设计出的阈值电流更小、输出功率更大的器件与普通结构在反射率及注入电流都相同的条件下输出功率大小的比较及阈值电流密度大小的比较,从而在理论上证实了这种VCSELs新型结构的优势。     

VCSELs与EELs多模弛豫振荡的研究

根据多模速率方程,利用MATLAB提供的SIMULINK软件包对垂直腔面发射激光器(VCSELs)和边发射激光器(EELs)多模弛豫振荡进行了研究。结果表明,与单模情况相比,多模时EELs弛豫振荡频率增大、弛豫和延迟时间缩短,而VCSELs动态特性变化不大。与此同时,在得出VCSELs的单模工作、高速调制以及提高偏置电流或自发辐射因子可改善两类器件动态特性等结论外还看到,VCSELs边模抑制比(SMSR)随偏置电流变化率高于EELs;自发辐射因子增大时,边模强度同比例增大、主模强度减小,利用微腔效应有效控制自发辐射因子可以优化VCSELs的单模特性。     

Analysis Expression of Rate Equation for Vertical Cavity Lasers

An analysis solution of rate equation is derived for vertical cavity surface-emitting lasers.Based on the enhanced spontaneous emission caused by VCSELs and influence of nonradiative recombination, the relation between output properties and structural parametersof multi-quantum wells(MQWs) is obtanined.It was found that the characteristic curve of a “thresholdless“ laser is strongly nonradiative depopulation-dependent.When the nonradiative depopulation is no zero,the light-current characteristic is not linearly even for an ideal closed microcavity.The light output is increased by the enhanced well number and by the reduced width.In particular, a lower threshold current density for MQWs structure in the short cavity is realized by us, meanwhile the sharpness of the variation depends on spontaneous emission factor.     

Photoreflectance study at the micrometer scale

Photoreflectance (PR) spectroscopy has proven to be a very efficient non-destructive tool to get information on various semiconducting epitaxial structures as it is very sensitive to every direct optical transitions in semiconducting quantum structures and allows as well to optically measure internal electric fields in space charge layers, through Franz-Keldysh oscillation (FKO) analysis. We have developed an experimental setup to get micro-PR spectra on epitaxial structures or devices on a few micrometer size spots. Due to very low signal intensity, experimental conditions have to be very carefully controlled: the signal/noise ratio strongly depends on the pump-probe power ratio.We give experimental micro-PR results recorded on antimonide-based heterojunction bipolar transistors (HBTs), which give the local electric field at the emitter-base junction under different biasing conditions. A second part of the paper is devoted to micro-PR analysis performed on tuneable vertical cavity surface emitting layers (VCSELs) with InP/air Bragg mirrors. In such VCSELs, both the cavity Fabry-Perot peak and the active region quantum well ground state are giving transitions in the micro-PR spectrum. This is very useful in the case of a tuneable structure. Feasibility of micro-PR analysis at the device scale is demonstrated.