The aim of this article is to synthesis tungsten oxide (WO3) nanoparticle along with Manganese (3 wt% and 10 wt%) by Microwave irradiation method. The physical properties of the synthesized Manganese doped Tungsten oxide materials were characterized by X-Ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR), Transmission Electron Microscope (TEM), UV-Diffuse Reflectance Spectroscopy, SEM-EDAX and Photoluminescence studies. The predominant peaks obtained in X-ray diffraction pattern reveal the crystalline nature of the nanoparticles and the structure belongs to Monoclinic for pure and Mn doped WO3. FTIR analysis shows the presence of Tungsten and oxygen in the synthesis material and verified with EDAX. TEM analysis shows both pristine and Mn doped WO3 nanopaticles. They are having spherical shaped morphology with average particle size from 35 to 40 nm. UV-DRS revealed that the bandgap energy for pure and Manganese doped WO3 are discussed in this article. The Scanning Electron Microscope analysis shows the plate like morphology for pure WO3 and the morphology were decreased by doping Manganese. The defects and oxygen deficiencies were analysed by photoluminescence spectroscopy. 相似文献
The surface morphology evolution of Ni/W alloys was studied, as a function of the alloy composition. Using the modified plating baths developed in our laboratory recently, electroplated Ni/W alloys with different W content, in the range of 7–67 atom percent (a/o), can be obtained. This was found to lead to different structures, ranging from polycrystalline fcc-Ni type structure to amorphous, followed by orthorhombic with increasing W content in the alloy. Powder XRD was studied to determine the crystal structures. Ex situ STM, AFM and SEM were used to study in detail the surface morphologies of the different alloys, and their evolution with increasing W content.
The important findings are that a mixture of two crystalline forms can give rise to an amorphous structure. Hillocks that are usually a characteristic of epitaxial growth can also exist in the amorphous alloys. Oriented scratches caused by stress can also be formed.
Up to 20 a/o of W is deposited in the alloys in crystalline form, with the fcc-Ni type structure. Between 20 and about 40 a/o an amorphous structure is observed, and above that an orthorhombic crystal structure is seen, which is characteristic of the NiW binary alloy. Careful choice of the composition of the plating bath allowed us to deposit an alloy containing 67 a/o W, which corresponds to the composition NiW2. 相似文献
For the lowest resistance, it is required to have the epitaxial silicon contact between the silicon plug and the substrate
and good step coverage at the high aspect-ratio contact holes, simultaneously. In this work, a double polysilicon (DPS) deposition
technique was proposed for the requirements. The first, thin silicon layer is deposited in a single-wafer process chamber
with an in-situ H2-RTP (rapid thermal process) treatment for the epitaxial contact, and the second silicon layer is formed in a batch-type furnace
for good step coverage. From chain resistance, Kelvin Rc, and current-voltage (I–V) measurement, the DPS process meets both low resistance and good uniformity, so that it suggests
a breakthrough in the small-sized, semiconductor device application. 相似文献
The behavior of zirconium atoms at the W(100) surface associated with oxygen adsorption at different sample temperatures has been studied by Auger electron spectroscopy (AES), ion scattering spectroscopy (ISS), and the relative change of the work function (Δф) measured by the onset of the secondary electron energy distribution. The results have revealed: (i) adsorption of zirconium onto the W(100) surface followed by the elevation of the sample temperature up to 1710 K in an oxygen partial pressure of 2.7 × 10−4 induces complete diffusion of zirconium atoms into the W(100) substrate; (ii) further exposure of oxygen induces co-existence of oxygen and tungsten on the surface at 1710 K, resulting in a work function of 4.37 eV; (iii) keeping the sample temperature at 1710 K, simple evacuation of the system has resulted in surface segregation of zirconium atoms to the surface to form a zirconium atomic layer on the top-most surface, reducing the work function to 2.7 eV. The results have revealed that this specific behavior of zirconium atoms at high temperature assures, with very good reproducibility, the highly stable performance and long service life of Zr---O/W(100)-emitters in practical use, even in a low vacuum of 10−6 Pa. 相似文献
Oxometal complexes of molybdenum and tungsten in high oxidation states from stable adducts with 1,3-dimethylimidazoline-2-ylidene (L) 1. The first ‘carbene’ complexes of molybdenum(VI) [MoO2Cl(L)3]Cl (3a) and tungsten(VI) WO2Cl2(L)2 (4b) are reported. 相似文献