Deposition,opto-electronic and structural characterization of polymorphous silicon thin films to be applied in a solar cell structure

In this study we analyze the optoelectronic properties and structural characterization of hydrogenated polymorphous silicon thin films as a function of the deposition parameters. The films were grown by plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of argon (Ar), hydrogen (H₂) and dichlorosilane (SiH₂Cl₂). High-resolution transmission electron microscopy images and Raman measurements confirmed the existence of very different internal structures (crystalline fractions from 12% to 54%) depending on the growth parameters. Variations of as much as one order of magnitude were observed in both the photoconductivity and effective absorption coefficient between the samples deposited with different dichlorosilane/hydrogen flow rate ratios. The optical and transport properties of these films depend strongly on their structural characteristics, in particular the average size and densities of silicon nanocrystals embedded in the amorphous silicon matrix. From these results we propose an intrinsic polymorphous silicon bandgap grading thin film to be applied in a p–i–n junction solar cell structure. The different parts of the solar cell structure were proposed based on the experimental optoelectronic properties of the pm-Si:H thin films studied in this work.     

Annealing temperature dependent structural and optical properties of electrodeposited CdSe thin films

Cadmium selenide films were synthesized using simple electrodeposition method on indium tin oxide coated glass substrates. The synthesized films were post annealed at 200 °C, 300 °C and 400 °C. X-ray diffraction of the films showed the hexagonal structure with crystallite size <3 nm for as deposited films and 3–25 nm for annealed films. The surface morphology of films using field emission scanning electron microscopy showed granular surface. The high resolution transmission electron microscopy of a crystallite of the film revealed lattice fringes which measured lattice spacing of 3.13 Å corresponding to (002) plane, indicating the lattice contraction effect, due to small size of CdSe nanocrystallite. The calculation of optical band gap using UV–visible absorption spectrum showed strong red-shift with increase in crystallite size, indicating to the charge confinement in CdSe nanocrystallite.     

Strain effects on multiferroic BiFeO3 films

The field of multiferroics has experienced a rapid progress resulting in the discovery of many new physical phenomena. BiFeO₃ (BFO) compound, which is one of the few room-temperature single-phase multiferroics, has contributed subsequently to this progress. As a result, significant review articles have been devoted specifically to this famous system. This chapter is dedicated to the strain effects on the structure stability and property changes of BFO thin films. It is a short and non-exhaustive topical overview that may be seen as an invitation for interested readers to go beyond. There is a very active and prolific research in this field and we apologize to the authors whose relevant work is not cited here. After a short introduction, we will thus review the effect of strain on BFO films by describing the consequences on the structure and the phase transitions as well as on polar, magnetic and magnetoelectric properties.     

Electrochemical growth and characterization of iron doped cadmium sulfide thin films

Cadmium Sulfide and Ferrous doped Cadmium Sulfide thin films have been prepared on different substrates using an electrodeposition technique. Linear sweep voltammetric analysis has been carried out to determine deposition potential of the prepared films. X-ray diffraction analysis showed that the prepared films possess polycrystalline nature with hexagonal structure. Surface morphology and film composition have been analyzed using Scanning electron microscopy and Energy dispersive analysis by X-rays. Optical absorption analysis showed that the prepared films are found to exhibit Band gap value in the range between 2.3, 2.8 eV for Cadmium Sulfide and Ferrous doped Cadmium Sulfide.     

掺镱双包层高功率光纤激光器输出特性研究

对线形腔掺镱双包层高功率光纤激光器的输出特性进行了研究 ,通过求解速率方程 ,得到了激光器泵浦阈值功率、输出光功率和斜率效率的表达式。分析了光纤长度、腔镜反射率和泵浦波长等因素对激光器阈值功率、输出光功率和斜率效率的影响 ,为高功率光纤激光器的优化设计提供了理论依据     

城域网中光纤光缆的探讨

城域网的建设是今后光纤网络建设的一个热点，根据城域网的特点和系统技术要求选择光纤光缆是网络设计的重要组成部分。本根据城域网的特点和需求，对市场上现有的光纤光缆做了详细的分析和探讨，提出了城域网规划中光纤光缆选择的原则和具体的建议。     

两种基于弯曲损耗的光纤测试仪器原理及应用

光纤通信技术的飞速发展带动了光纤测试仪器的发展。主要对两种利用弯曲损耗对光纤进行检测的仪器——光纤识别仪、光纤对线器的原理、结构及其在光纤通信工程中的应用进行了阐述，两种仪器可以在不中断光纤通信的情况下对光纤进行检测，极大地降低了对光纤通信系统的影响，对光纤通信系统具有重要意义。     

Effect of Sb implantation on copper silicides formation and morphology after annealing of Cu/Si structures

In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900 Å thicknesses are thermally evaporated on Si(1 1 1) substrates, part of them had previously been implanted with antimony ions of 5×10¹⁴ or 5×10¹⁵ at. cm⁻² doses. The samples are heat-treated in vacuum at temperatures in the range 200–700 °C for various times. The results show the growth and formation of Cu₃Si and Cu₄Si silicides under crystallites shape dispatched on the sample surface, independently of the implantation dose. On the other hand, it is established that the copper layer is less and less consumed as the antimony dose increases, resulting in the accumulation of Sb⁺ ions at silicide/Si interface and in the silicide layer close to surface. The exposure of samples to air at room temperature shows the stability of Cu₄Si phase whereas the Cu₃Si silicide disappears to the benefit of the silicon dioxide formation. The observed phenomena are discussed.     

小波变换分离太阳射电频谱图中的纤维结构

太阳射电爆发纤维精细结构是太阳射电爆发活动中一类重要的观测现象,利用二维小波变换对纤维精细结构动态频谱图进行处理,分离频谱图中的纤维结构。首先对原始频谱图实行多层小波变换,由低频分量重构原始图像,就可得到爆发的背景信息,令原始频谱图减去背景并经过阈值处理后,便可将原始频谱图中的纤维结构很好地分离出来。     

光纤通信在市内接入网的应用

先说明市内接入网的单位用户和住家用户两大类使用通信和电视、交互型和分配型业务的要求不相同，相应地对光纤传输的应用须作不同的考虑，文中认为；光纤从市内交换局直连办公大楼是合乎现实需要的，而对于居民住家，宜选用光纤连至路边或光纤与同轴结合和适当利用无源光网络等方案，俟将来时机成熟才实行光纤连至每一家，文末有概括总结，说明接入网不同于长途网，接入网的光纤系统可以使用常规单模光纤，工作于波长1．3μm，而光放大器和波分多路系统不是普遍需要，但光电子集成在光端机中是必要的。