Defocusing image to pattern contact holes using attenuated phase shift masks

The patterning of contact holes by selecting out-of-focus image plane (defocus) using attenuated phase shift masks (APSM) has been studied. Defocus is found to enhance the image modulation at low partial coherence for contact holes with negative local average of mask function. Semi-dense holes up to 130 nm in 8% APSM have been printed by 0.5 μm defocus at a partial coherence of 0.31 using KrF scanner with highest numerical aperture of 0.68. However, these holes were closed with in-focus imaging. Defocus is also found to be beneficial for patterning the pitches that have extensive side lobes with in-focus imaging.     

X射线光刻掩模背面刻蚀过程中的形变仿真

开发了理论模型以验证有限元方法用于X射线光刻掩模刻蚀过程数值仿真的正确性。利用相同的有限元技术，对X射线光刻掩模的背面开窗、Si片刻蚀过程进行数值仿真。结果表明，图形区域的最大平面内形变(IPD)出现在上、下边缘处，最大非平面形变(OPD)出现在左、右边缘处。此外对Si片单载荷步刻蚀和多载荷步刻蚀的仿真进行比较，结果表明图形区域最终的形变量与Si片刻蚀的过程无关。     

数字电视用中分辨率74cm纯平彩色显像管BC配列不良的分析与对策

通过对74cm中分辨率纯平彩色显像管BC配列局部严重群散不良的调查分析,确定荫罩受力塌陷是主要原因,通过改良设计、工艺优化及其它方面的综合对策,使以上技术难题得到满意的解决,整管不良率由4.78%下降到0.172%。     

光束发散度对紫外写入光纤光栅的影响

用傅里叶衍射光学分析了准分子激光束发散度对于光纤光栅制备的影响，发现光束发散角使光纤光栅的布拉格波长发生改变，相位版后干涉场沿光纤轴向和径向不均匀，对制备30dB高反射率光纤光栅造成困难。实验结果与理论分析基本一致，相对于理想平行光束情况，会聚光束使得光纤光栅布拉格波长出现在短波一边，发射光束使得光纤光栅布拉格波长出现在长波一边。     

Interfacial reactions in In-Sn/Ni couples and phase equilibria of the In-Sn-Ni system

The In-Sn-Ni alloys of various compositions were prepared and annealed at 160°C and 240°C. No ternary compounds were found; however, most of the binary compounds had extensive ternary solubility. There was a continuous solid solution between the Ni₃Sn phase and Ni₃In phase. The Sn-In/Ni couples, made of Sn-In alloys with various compositions, were reacted at 160°C and 240°C and formed only one compound for all the Sn-In alloys/Ni couples reacted up to 8 h. At 240°C, Ni₂₈In₇₂ phase formed in the couples made with pure indium, In-10at.%Sn and In-11at.%Sn alloys, while Ni₃Sn₄ phase formed in the couples made of alloys with compositions varied from pure Sn to In-12at.%Sn. At 160°C, except in the In/Ni couple, Ni₃Sn₄ formed by interfacial reaction.     

印制板液态感光阻焊油墨的工艺控制

本文介绍印制板液态感光阻焊油墨的工艺流程、工艺控制，并对生产中较常出现的几种质量问题进行讨论，进而提出解决措施。     

Effect of Cu concentration on the reactions between Sn-Ag-Cu solders and Ni

The reaction between the Sn-Ag-Cu solders and Ni at 250°C for 10 min and 25 h was studied. Nine different Sn-Ag-Cu solders, with the Ag concentration fixed at 3.9 wt.% and Cu concentrations varied between 0.0–3.0 wt.%, were used. When the reaction time was 10 min, the reactions strongly depended on the Cu concentration. At low-Cu concentrations (≦0.2 wt.%), only a continuous (Ni_1−xCu_x)₃Sn₄ layer formed at the interface. When the Cu concentration increased to 0.4 wt.%, a continuous (Ni_1−xCu_x)₃Sn₄ layer and a small amount of discontinuous (Cu_1−yNi_y)₆Sn₅ particles formed at the interface. When the Cu concentration increased to 0.5 wt.%, the amount of (Cu_1−yNi_y)₆Sn₅ increased and (Cu_1−yNi₆)₆Sn₅ became a continuous layer. Beneath this (Cu_1−yNi_y)₆Sn₅ layer was a very thin but continuous layer of (Ni_1−xCu_x)₃Sn₄. At higher Cu concentrations (0.6–3.0 wt.%), (Ni_1−xCu_x)₃Sn₄ disappeared, and only (Cu_1−yNi_y)₆Sn₅ was present. The reactions at 25 h also depended strongly on the Cu concentration, proving that the strong concentration dependence was not a transient phenomenon limited to a short reaction time. The findings of this study were rationalized using the Cu-Ni-Sn isotherm. This study shows that precise control over the Cu concentration in solders is needed to produce consistent results.     

大焦深成像系统仿真实验研究

如何增大非相干光学成像系统的焦深是应用光学研究领域的热点问题.本文对采用高次非球面光学掩模板与图像处理相结合增大成像光学系统焦深的新方法进行了深入分析,建立了大焦深成像系统仿真实验模型,并进行了大焦深成像系统仿真实验.实验结果证明了该方法在维持原相对孔径的同时使光学系统在较大的离焦范围内有好的成像质量.实际应用中还要综合考虑模板参量、信噪比等关键因素.     

Selective area epitaxy of CdTe

We have performed selective area epitaxy (SAE) of CdTe layers grown by molecular beam epitaxy using a shadow mask technique. This technique was chosen over other SAE techniques due to its simplicity and its compatibility with multiple SAE patterning steps. Features as small as 50 microns × 50 microns were obtained with sharp, abrupt side walls and flat mesa tops. Separations between mesas as small as 20 microns were also obtained. Shadowing effects due to the finite thickness of the mask were reduced by placing the CdTe source in a near normal incidence position. Intimate contact between the mask and the substrate was essential in order to achieve good pattern definition.     

荫罩黑化及DX气与煤气成分的探讨

本文介绍了彩色显像管荫罩黑化反应的机理,详细说明了DX气制气流程,以及DX气的成分对黑化膜品质的影响。计算分析了成分不同的煤气在制成DX气时的成分变化。同时还分析了黑化工艺和黑化设备对煤气成分波动的适应性,及在生产实践中改变DX气制气时的煤气空气对黑化膜质量的影响。