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1.
C. Lavoie F. M. d Heurle C. Detavernier C. Cabral Jr. 《Microelectronic Engineering》2003,70(2-4):144-157
In this paper, we review some of the advantages and disadvantages of nickel silicide as a material for the electrical contacts to the source, drain and gate of current and future CMOS devices. We first present some of the limitations imposed on the current cobalt silicide process because of the constant scaling, of the introduction of new substrate geometries (i.e. thin silicon on insulator) and of the modifications to the substrate material (i.e. SiGe). We then discuss the advantages of NiSi and for each of the CoSi2 limitations, we point out why Ni is believed to be superior from the point of view of material properties, miscibility of phases and formation mechanisms. Discussion follows on the expected limitations of NiSi and some of the possible solutions to palliate these limitations. 相似文献
2.
Mo2Ni3Si/NiSi metal silicide composite coatings with a fine microstructure consisting of Mo2Ni3Si primary dendrites and the interdendritic Mo2Ni3Si/NiSi eutectics were fabricated on austenitic stainless steel AISI 321 by laser cladding process. Small amplitude reciprocating sliding wear resistance of the coatings is evaluated as functions of normal load and slip amplitude and the wear mechanisms were discussed based on worn surface morphology observations. Results showed that the Mo2Ni3Si/NiSi coatings have excellent small amplitude reciprocating sliding wear resistance. 相似文献
3.
In this work, the optical and structural properties of high k materials such as tantalum oxide and titanium oxide were studied by spectroscopic ellipsometry, where a Tauc-Lorentz dispersion model based in one (amorphous films) or two oscillators (microcrystalline films) was used. The samples were deposited at room temperature by radio frequency magnetron sputtering and then annealed at temperatures from 100 to 500 °C. Concerning the tantalum oxide films, the increase of the annealing temperature, up to 500 °C does not change the amorphous nature of the films, increasing, however, their density. The same does not happen with the titanium oxide films that are microcrystalline, even when deposited at room temperature. Data concerning the use of a four-layer model based on one and two Tauc-Lorentz dispersions is also discussed, emphasizing its use for the detection of an amorphous incubation layer, normally present on microcrystalline films grown by sputtering. 相似文献
4.
5.
The interaction between thin films of hydrogenated amorphous silicon and sputter-deposited chromium has been studied. Following
deposition of the chromium films at room temperature, the films were annealed over a range of times and temperatures below
350°C. It was found that an amorphous silicide was formed only a few nanometers thick with the square of thickness proportional
to the annealing time. The activation energy for the process was 0.55±0.05 eV. The formation process of the silicide was very
reproducible with the value of density derived from the thickness and Cr surface density being close to the value for crystalline
CrSi2 for all films formed at temperatures ≤300°C. The specific resistivity of the amorphous CrSi2 was ≈600 μΩ·cm and independent of annealing temperature. 相似文献
6.
S. P. Ashburn M. C. Öztürk J. J. Wortman G. Harris J. Honeycutt D. M. Maher 《Journal of Electronic Materials》1992,21(1):81-86
Titanium and cobalt germanides have been formed on Si (100) substrates using rapid thermal processing. Germanium was deposited
by rapid thermal chemical vapor deposition prior to metal evaporation. Solid phase reactions were then performed using rapid
thermal annealing in either Ar or N2 ambients. Germanide formation has been found to occur in a manner similar to the formation of corresponding silicides. The
sheet resistance was found to be dependent on annealing ambient (Ar or N2) for titanium germanide formation, but not for cobalt germanide formation. The resistivities of titanium and cobalt germanides
were found to be 20 μΩ-cm and 35.3μΩ-cm, corresponding to TiGe2 and Co2Ge, respectively. During solid phase reactions of Ti with Ge, we have found that the Ti6Ge5 phase forms prior to TiGe2. The TiGe2 phase was found to form approximately at 800° C. Cobalt germanide formation was found to occur at relatively low temperatures
(425° C); however, the stability of the material is poor at elevated temperatures. 相似文献
7.
本文描述用离子束透过钽金属膜进行混合和快速热处理方法来形成钽的硅化物.用溅射方法在P型硅衬底上淀积一层金属钽,然后用砷离子束透过钽金属模进行混合,采用快速热处理后形成了平整的硅化钽薄层.使用厚度为500埃的钽金属膜,得到钽的硅化物薄层电阻为5.5Ω/□.研究了砷离子能量、剂量及钽膜厚度对钽的硅化物薄层电阻的影响.用透射电镜和台阶仪对所形成的硅化钽进行了分析和厚度测量. 相似文献
8.
K. M. A. Salam Hidekazu Konishi Masahiro Mizuno Hisashi Fukuda Shigeru Nomura 《Applied Surface Science》2002,190(1-4):88-95
Polycrystalline (1−x)Ta2O5−xTiO2 thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO2 layer was formed at the (1−x)Ta2O5−xTiO2/Si interface. Thin films with 0.92Ta2O5–0.08TiO2 composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×1011 cm−2 eV−1, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm2 was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10−9 A/cm2 up to an applied electric field of 6 MV/cm. 相似文献
9.
本文评述了单晶CoSi_2和NiSi_2的结构特点、各种制备方法、器件应用和发展前景。采用分子束外延(MBE)和“内延”法(Mesotaxy)制备的单晶硅化物质量,电学性能和热稳定性较好。由于首次得到理想的突变的金属——半导体接触,使对金属——半导体接触的理论分析成为可能。硅/单晶硅化物/硅结构在实际应用中非常重要,如单晶硅化物作集电极埋层,能降低集电极串联电阻,克服重掺杂埋层的横扩和自掺杂问题,提高了电路工作速度,减小了器件面积。埋层硅化物也可作为微波传输线的地线,是实现高频集成电路互连的好方法。而采用该结构制备的高速器件——金属基区晶体管(MBT)和穿透基区晶体管(PBT),具有很好的应用前景。 相似文献
10.