ZnO基薄膜晶体管的研究

ZnO是一种宽带隙的光电半导体材料,能应用于很多领域,如可用在压敏变阻器、声表面波器件、气敏元件、紫外光探测等。ZnO也可以作为有源层应用于薄膜晶体管(TFT)中。ZnO基薄膜晶体管具有以下突出优势:对于可见光部分平均具有80%以上的透射率,迁移率可以高达36cm2/V·s,开/关电流比大于106,可在较低温度(甚至室温)下制备。基于这些优点,ZnOTFT具有取代有源矩阵液晶显示器中常规a-SiTFT的趋势。同时对ZnOTFT的研究也推动了透明电子学的发展。本文阐述了ZnOTFT优越的电学性能,指出了其目前尚存在的不足,并对其发展前景进行了展望。     

非晶硅基薄膜的等离子体刻蚀光发射谱检测

本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。     

TFT LCD的过压驱动技术探讨

过压驱动技术是提高液晶显示器响应速度的关键技术之一。文章分析了TN型TFT液晶显示的原理及影响响应时间的因素,探讨了过压驱动的原理和系统结构,对灰阶亮度上升和下降两种状态下的应用进行了说明。对液晶显示系统进行了实验分析以及响应时间的测量,结果表明通过过压驱动可以在很大程度上提高液晶显示器的响应时间,有效改善显示画面的动态模糊问题。在0℃的环境温度下,最大灰阶响应时间不超过80ms。     

A new imidazolylquinoline for organic thin film transistor

A new active electronic material, 2-(naphtho[3,4]imidazol-2-yl)quinoline (NIQ), 1, has been synthesized and fully characterized. This compound exhibits field-effect carrier mobility and behaves as a p-type semiconductor (μ_FET = 0.148 cm²/V s at V_DS = 10 V). NIQ and its related imidazolylquinoline compounds may have possible applications as active materials in organic thin film transistors.     

Improved bias stress stability of In–Ga–Zn–O thin film transistors by UV–ozone treatments of channel/dielectric interfaces

Possibility of improving the bias stress stability of amorphous In–Ga–Zn–O thin film transistors (a-IGZO TFTs) was explored by irradiating the channel/dielectric interface with ultraviolet (UV) light during the device fabrication process. The UV treatment of the channel/dielectric interface did not cause significant changes in the device performance itself. However, when the TFTs were tested under prolonged gate bias stress, the device with longest UV treatment showed the smallest time dependence of threshold voltage shift. This accompanied the smallest changes in the field effect mobility and subthreshold swing with extended bias stress. Such improvements in bias stress stability are attributed to the modification of the channel/dielectric interface due to the UV-generated ozone that in turn decreased the interface trap density and structurally modified the interface region on the dielectric side to prevent the redistribution of the trapped charges.     

Accounting for variability in the design of circuits with organic thin-film transistors

We experimentally verify that the methodology to account for local parameter variations and transistor mismatch known in Si CMOS technologies can be transposed to organic thin-film transistor technologies, and we present a design case that makes use of design for variability. Transistor parameter variation decreases with the square root of the transistor footprint. As a consequence, Monte Carlo simulations which take this effect into account can be executed to better predict the final circuit yield. The design case in this work is an 8-bit, organic RFID transponder chip. The yield prediction by simulations corresponds to the finally observed circuit yield.     

基于柔性PI基底的氧化物IGZO TFT器件工艺及特性研究

讨论了基于柔性PI基底上的底栅型TFT器件工艺,通过工艺优化解决了双层结构干刻速率不同造成的下切角形状。本文TFT器件是基于氧化物IGZO为有源层,栅绝缘层采用Si3N4/SiO2双层结构,采用两次补偿曝光、干刻方式消除干刻引入的下切角形状,有效解决了薄膜沉积引入的断线风险。实验结果表明,经过SEM断面观察,干刻后双层结构taper角度适合TFT器件后续沉膜条件,柔性基底上制作的TFT器件迁移率达到14.8cm2/(V·s),阈值电压Vth约0.5V,亚域值摆幅SS约0.5V/decade,TFT器件的开关比Ion/Ioff106。通过此方法制作出的器件性能良好,满足LCD、OLED或电子纸的驱动要求。     

硅基TFT有源矩阵液晶显示技术

介绍了薄膜晶体管（ＴＦＴ）,特别是ｐ－Ｓｉ（多晶硅）ＴＦＴ矩阵寻址液晶显示器的工作原理、结构、特点、制作工艺和电学特性,对器件参数的选择进行了分析     

LTPS TFT层间绝缘层过孔刻蚀的工艺优化

为了适应LTPS TFT LCD显示屏超高分辨率极细布线的趋势,降低LTPS TFT层间绝缘层过孔刻蚀带来的良率损失,提高产品品质,本文研究了LTPS TFT层间绝缘层过孔刻蚀的工艺优化。实验以干法刻蚀为主刻蚀,湿法刻蚀为辅刻蚀的方式,既结合干法刻蚀对侧壁剖面角及刻蚀线宽的精确控制能力,又利用了湿法刻蚀高刻蚀选择比的优良特性,改善了层间绝缘层刻蚀形貌,减少干法刻蚀对器件有源层的损伤,避免有源层被氧化,防止刻蚀副产物污染开孔表面。实验结果表明,干法辅助湿法刻蚀能基本解决刻蚀过程中过刻、残留的问题,使得层间绝缘层过孔不良良率损失减少73%以上,且TFT源漏电极接触电阻减小约90%,器件开态电流提升约15%。干法辅助湿法刻蚀是一种优化刻蚀工艺,提升产品性能的新方法。     

三端子有源矩阵液晶显示器

主要介绍了ＴＦＴ特别是ａ－ＳｉＴＦＴ矩阵寻址的液晶显示器的结构、制作工艺、工作原理、动态和驱动特性，并着重对其器件参数的选择进行了分析，为今后器件的设计提供了理论依据。同时也介绍了其它三端子方式ＡＭＬＣＤ的特点及所存在的问题。