具有激光二极管结构的1.3μm侧面发光二极管（Ⅰ）：理论分析

讨论了用某些参数不合格的激光二有管管芯制作侧面发光二极管的可能性，并给出了超辐射发光二极管和侧面发光二极管的定量判定依据。     

SiO高效减反射膜的蒸镀和监控

报道了使用 IL400膜厚速率控制仪监控 SiO 减反射膜的蒸镀,通过对1.3μm 激光器前端面蒸镀 SiO 减反射膜而制成了超辐射发光二极管。     

GaAlAs超发光二极管

本文报导在GaAlAs双异质结激光器腔面上,蒸镀ZrO2减反射涂层,制成了GaAlAs超发光二极管,室温连续输出最大功率为9.1mW,光谱带宽为155A.     

1.3μm超辐射发光二极管

本文报告了电子束蒸镀 Si_3N_4减反射膜的结果,并制成了1.3μm 超辐射发光二极管。室温连续输出功率1.2mW,光谱半功率宽度9nm。     

超辐射发光二极管(SLD)

概述了实现超辐射发光二极管的主要手段以及制备的器件性能和特点,并讨论了其发展趋势。     

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building blocks of EPIC and ICT. Alternatively, these optical sources are potential candidates for other multi-disciplinary field applications.     

窗口吸收区结构超辐射发光二极管的优化设计与特性研究

本文从理论上对1.3μm InGaAsP/InP窗口吸收区结构超辐射发光二极管进行了优化设计.并在考虑增益饱和和热效应的条件下,用耦合速率方程模拟计算了该结构超辐射发光二极管的功率输出特性.分析研究了窗口区长、泵浦区长、有源层厚度和输出腔面反射率对其输出特性的影响.研究结果表明,由于窗口吸收区的有效散射和吸收,很好地抑制了F-P受激振荡,可用于实现高性能超辐射发光二极管.     

超辐射发光二极管数值仿真模型

采用谱分割方法和分段模型对1.5 μm 波段的超辐射发光二极管(SLD)进行了仿真.为减小分段模型的分段数目和计算时间,对文献中常采用的计算每小段平均光功率(平均光子数密度)的3种主要方法进行了对比分析,结果表明:积分平均的方法具有显著的优势.与商用器件的测试结果相比,数值计算的输出光谱和电流-输出功率曲线基本相符.对高功率SLD的数值仿真表明:在有源区长度大于1mm后,输出功率的增长出现明显的饱和现象,纵向空间烧孔(LSHB)效应限制了增加有源区长度对输出功率增长的贡献.此外,对高功率SLD,使用忽略LSHB效应的单段模型计算输出功率可产生数倍的误差,因此,采用分段模型计入LSHB效应是必要的.     

1.3μmInGaAsP/InP涂层结构超辐射发光二极管输出特性的理论和实验

本文用考虑了增益饱和和热效应的耦合速率方程,对减反射涂层结构1.3μmInGaAsP/InP超辐射发光二极管的输出特性进行了计算,给出了腔长、有源层厚度和后腔面反射率对其输出光功率的影响以及光谱半宽随腔长和注入电流的变化。计算结果与我们制备的该结构超辐射发光二极管测试结果有较好的符合。     

High performance superluminescent diodes at 1.3μm wavelength

The design,fabrication and performance of 1.3цm superluminescent diodes are reported.A InP window structure and a passive absorber waveguide in different plane are applied to suppress lasing oscillation.A buried crescent structure similar to a laser diode is introduced to achieve high output power.The output power of about 700цW is coupled into a single-mode fiber at 150mA and 25℃.Spectrum width is more than 30nm.The devices operate in superluminescent state in the range from0℃to 60℃.