Electrochemical growth and characterization of iron doped cadmium sulfide thin films

Cadmium Sulfide and Ferrous doped Cadmium Sulfide thin films have been prepared on different substrates using an electrodeposition technique. Linear sweep voltammetric analysis has been carried out to determine deposition potential of the prepared films. X-ray diffraction analysis showed that the prepared films possess polycrystalline nature with hexagonal structure. Surface morphology and film composition have been analyzed using Scanning electron microscopy and Energy dispersive analysis by X-rays. Optical absorption analysis showed that the prepared films are found to exhibit Band gap value in the range between 2.3, 2.8 eV for Cadmium Sulfide and Ferrous doped Cadmium Sulfide.     

Development of B‐doped Si multiple delta‐layer reference materials for SIMS profiling

B‐doped Si multiple delta‐layers (MDL) were developed as certified reference materials (CRM) for secondary ion mass spectrometry (SIMS) depth profiling analysis. Two CRMs with different delta‐layer spacing were grown by ion beam sputter deposition (IBSD). The nominal spacing of the MDL for shallow junction analysis is 10 nm and that for high energy SIMS is 50 nm. The total thickness of the film was certified by high resolution transmission electron microscopy (HR‐TEM). The B‐doped Si MDLs can be used to evaluate SIMS depth resolution and to calibrate the depth scale. A consistency check of the calibration of stylus profilometers for measurement of sputter depth is another possible application. The crater depths measured by a stylus profilometer showed a good linear relationship with the thickness measured from SIMS profiling using the calibrated film thickness for depth scale calibration. The sputtering rate of the amorphous Si thin film grown by sputter deposition was found to be the same as that of the crystalline Si substrate, which means that the sputtering rate measured with these CRMs can be applied to a real analysis of crystalline Si. Copyright © 2005 John Wiley & Sons, Ltd.     

轮廓仪检测的系统误差分析

从轮廓仪的工作原理出发，分析了影响轮廓仪检测精度的主要系统误差，并以二次旋转非球面为例计算了系统误差对面形检测精度的影响，得出Talysurf轮廓仪在测量时，系统误差对面形误差的影响随顶点曲率的绝对值、口径以及偏心率函数的增大而增大，随定位误差和不重合误差的增大而增大的结论。最后的实验结果证明了该结论的正确性。     

层析三维数字化仪二维端面图像预处理方法研究

文中提出了一种新型的递归中值滤波器,将滤波算法转化为一种优化处理,兼顾了滤波处理的光滑连续性及抑制噪声的累积特性,可有效地消除脉冲型干扰的影响,并对该算法进行了分析,为消除加快高斯噪声,提出了一种小波线性滤波器,它仅仅处理边缘信息,克服了边缘模糊效,波波的去噪逆向重构的处理方法,对边缘为阶跃型的层析图像非常实用。     

一种基于Matlab的非球面光学元件面形参数测试技术

提出了一种接触式轮廓仪测量非球面参数的新方法,该方法通过在传统的二维接触式轮廓仪基础上增加旋转,从而实现了三维测量。为了验证新方法的测量准确性与可行性,文中使用ZYGO干涉仪对旋转对称球面进行检测,与新方法的检测结果加以对比。最后,使用新方法对非球面光学元件的面形参数进行测试,分析结果表明新的测量方法具备较高的测试精度,满足测量要求。     

中小口径非球面元件加工技术的探讨

结合非球面轮廓检验和抛光工艺技术设备的研究 ,探讨了一种规范化的针对中小口径非球面元件的加工方法 ,并具体分析了实现非球面高效率批量化生产的技术途径 ,为中小非球面元件的广泛应用提供了有利的技术支持。     

层析三维数字化仪层析图像滤波器的设计及研究

提出一种新型的递归中值滤波器，抛掉了统计参数的制约，将滤波算法转化为一种优化处理。该方法兼顾了滤波处理的光滑连续性及抑制噪声的累积特性，可有效地消除脉冲型干扰的影响，同时也从理论的角度上对该算法进行了分析。为消除加性高斯噪声，提出了一种基于图像边缘方向的小波线性滤波器，它仅仅处理边缘信息。该算汉的极大优点是克服了边缘模糊效应，小波的去噪逆向重构的处理方法对边缘为跃型的层析图象非常实用。     

A Shack–Hartmann measuring head for the two‐dimensional characterization of X‐ray mirrors

The recent development of short‐wavelength optics (X/EUV, synchrotrons) requires improved metrology techniques in terms of accuracy and curvature dynamic range. In this article a stitching Shack–Hartmann head dedicated to be mounted on translation stages for the characterization of X‐ray mirrors is presented. The principle of the instrument is described and experimental results for an X‐ray toroidal mirror are presented. Submicroradian performances can be achieved and systematic comparison with a classical long‐trace profiler is presented. The accuracy and wide dynamic range of the Shack–Hartmann long‐trace‐profiler head allow two‐dimensional characterizations of surface figure and curvature with a submillimeter spatial resolution.     

Shack-Hartmann波前传感器非零位在轴检测离轴非球面反射镜

在离轴非球面反射镜研磨后期和粗抛光阶段,被测反射镜面形与理想面形存在着较大的偏差,表面反射率较低,采用干涉测量会因局部区域干涉条纹过密或条纹对比度过低,造成普通干涉仪无法进行全口径测量,而普通接触式轮廓仪测量精度此时已经不能满足加工要求。鉴于Shack-Hartmann波前传感器较大的动态范围和较高的测量精度,提出了采用Shack-Hartmann波前传感器非零位在轴检测离轴非球面面形,研究了该方法的检测原理并搭建了检测系统,分析了系统误差来源,并制作了用于在轴检测离轴非球面的参考波前,对两个不同加工精度的离轴非球面反射镜进行了测量,并与干涉仪的测量结果进行了对比。对比结果表明,Shack-Hartmann波前传感器的测量结果是正确可靠的,并且可以弥补轮廓仪测量和干涉仪测量的不足,从而证明了采用Shack-Hartmann波前传感器在轴检测离轴非球面的可行性和正确性。     

On the orientation independence of inverse pulsed laser deposition

Carbon nitride films have been deposited in the inverse pulsed laser deposition (IPLD) geometry by ablating a graphite target in nitrogen atmosphere while the spatial orientation of the target (and substrate) normal was varied. Two different orientations were tested, in one of which the axis of the plasma plume was made to point downwards, imposing the maximum gravitational barrier on the ablated species and make them move against the gravitational field while growing the film in order to verify the extent of a possible orientational effect. The thickness distribution of films obtained in different orientations was sampled along their axes of symmetry by stylus profilometry. The results indirectly proved that the kinetic energy of the species responsible for building the IPLD films surpassed the effect of gravitational field, even in the outer regions of the films, where the ablated species were believed to be thermalised. Evidences are also provided that utmost care should be taken to keep experimental conditions, like process pressure, spot size, etc., constant in order to get reproducible results.