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排序方式: 共有1608条查询结果,搜索用时 15 毫秒
1.
For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (Ron,sp) of 2 mΩ cm2, which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively. 相似文献
2.
激光熔覆Ni基SiC合金涂层组织与性能的研究 总被引:5,自引:0,他引:5
利用5kWCO2连续波激光器在16Mn钢基材表面对含20%(体积比)SiC陶瓷粉末的镍基自熔性合金粉末进行激光熔覆得到Ni基SiC合金涂层(NiSiC)。研究了合金涂层的组织形貌及相结构,并用单纯的镍基合金涂层(Ni60)进行了显微硬度及滑动磨损性能的对比试验。结果表明,NiSiC合金涂层由γ枝晶及其间的共晶组织组成,主要组成相为γ-Ni,γ-(Ni,Fe)固溶体和(Cr,Fe)7C3,Cr23C6及(Cr,Si)3Ni3Si等化合物。添加SiC的镍基合金涂层NiSiC比单纯的镍基合金涂层Ni60具有较高的硬度和耐磨性。 相似文献
3.
V. Anjos M.J.V. Bell E.F. da Silva Jr. R.W.A. Franco I.A. Esquef 《Microelectronics Journal》2005,36(11):977-980
In this paper we report the use of photothermal techniques such as Thermal lens (TL) spectrometry, Photoacoustic and heat capacity, ρcp, to determine the thermo-optical parameters, such as thermal conductivity (K), thermal diffusivity (D), specific heat (cp) and the optical path dependence with temperature (ds/dT), of an undoped polycrystalline 3C-SiC. To our knowledge, this is the first time that Thermal lens technique is used for wide band-gap systems. Results obtained for the polycrystalline sample with TL technique indicates that ds/dT is negative at room temperature. Moreover, the obtained values of thermal diffusivity and thermal conductivity are in good agreement with that found in the literature, indicating that the phototermal techniques can be used to obtain the referred parameters in circumstances where other techniques cannot be used, for example, in harsh environments. 相似文献
4.
R. D. Dupuis J. C. Bean J. M. Brown A. T. Macrander R. C. Miller L. C. Hopkins 《Journal of Electronic Materials》1987,16(1):69-77
We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical
vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge
and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied,
the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal
X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission
electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial
layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth
of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of
a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped
AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates. 相似文献
5.
本文对用C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度的方法进行了理论和实验分析. pn结的存在所造成的埋沟MOS结构C-V曲线的畸变为沟道载流子浓度的提取带来一些问题. SiC/SiO2界面上界面态的存在也会使提取出的数值与实际数值产生偏差. 本文首先从理论上分别分析了沟道深度和界面态对沟道载流子浓度提取结果的影响,然后对两种沟道深度的埋沟MOS结构C-V曲线进行了测试,提取出了沟道掺杂浓度. 在测试中,采用不同的扫描速率,分析了界面态对提取结果的影响. 理论分析结果和实验测
关键词:
C-V法
SiC
隐埋沟道MOSFET
沟道载流子浓度 相似文献
6.
7.
8.
The growth of GaInAsP lattice matched to GaAs using tertiary-butylphosphine and ethyldimethylindium to replace the more conventional
phosphine and trimethylindium is described. The quaternary compound lattice matched to GaAs has received far less attention
than related compositions that lattice match InP. Using the new sources, most of the growth problems experienced by previous
workers have been avoided. Uniform compositions have been grown reproducibly without evidence of gas-phase, adduct-forming
reactions. Bothn- andp-type films have been grown. Heteroepitaxy of high quality GalnAsP layers on Ge has also been achieved, and microstructural
results are presented. 相似文献
9.
本文应用表面分析技术研究HL-1装置中SiC涂层的等离子体辐照性能。结果表明,SiC材料应用于孔栏和壁涂层有利于减少杂质和提高等离子体品质。 相似文献
10.
A Beyer E MüllerH Sigg S StutzC David K EnsslinD Grützmacher 《Microelectronics Journal》2002,33(7):525-529
Germanium islands were embedded in strained silicon quantum wells in order to provide an improved electron confinement in vicinity of the islands. Growth was performed on relaxed SiGe layers. Patterned substrates were used, favouring lattice relaxation as well permitting the fabrication of small Ge islands at deposition temperatures above 500 °C. Photoluminescence analysis reveals a strongly reduced dislocation related signal. The low temperature spectra are dominated by intense signals from the germanium islands. The origin of these signals were investigated by removing the islands by etching, analysing reference samples without a silicon quantum well, varying the germanium deposition and the growth temperature. 相似文献