掺镱双包层高功率光纤激光器输出特性研究

对线形腔掺镱双包层高功率光纤激光器的输出特性进行了研究 ,通过求解速率方程 ,得到了激光器泵浦阈值功率、输出光功率和斜率效率的表达式。分析了光纤长度、腔镜反射率和泵浦波长等因素对激光器阈值功率、输出光功率和斜率效率的影响 ,为高功率光纤激光器的优化设计提供了理论依据     

LDD方法在提高电路工作电压中的应用研究

研究了利用轻掺杂漏结构来制作高电源电压器件的工艺方法。分析了ＬＤＤ结构参数对器件击穿特性的影响，并结合实验结果对Ｎ＾－区的注入剂量，长度及引入的串联电阻进行了优化设计。     

NMOS器件两次沟道注入杂质分布和阈电压计算

分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂地系数，给出了表面浓度与工艺参数之间的模拟关系式，以峰值浓度为强反型条件计算了开启电压，文章还给出了开启电压、氧化条件、不同注入组合之间的关系式。     

深亚微米MOSFET衬底电流的模拟与分析

利用器件模拟手段对深亚微米ＭＯＳＦＥＴ的衬底电流进行了研究和分析，给出了有效的道长度，栅氧厚度，源漏结深，衬底掺杂浓度以及电源电压对深亚微米ＭＯＳＦＥＴ衬底电流的影响，发现电源电压对深亚微米ＭＯＳＦＥＴ的衬底电流有着强烈的影响，热载流子效应随电源电压的降低而迅速减小，当电源电压降低到一定程度时，热载流子效应不再成为影响深亚微米ＭＯＳ电路可靠性的主要问题。     

DS1620实现的X射线采集板温度自动控制

DR是目前非常先进的X射线成像技术，将其X射线采集板工作温度控制在最佳工作范围可采集更好的图像。本系统采用PC和单独控制双模块分别控制温度，利用半导体传感器DS1620进行四路温度采集，通过单片机和PC串口通信，用PC通过半导体制冷芯片来控制X射线采集板的工作温度，在通信故障时也可以通过单独控制模块来控制采集板的温度。     

Polariton gap solitary waves in semiconductor microcavities

We study nonlinear dynamics of optical pulse propagation in the spectral region inside the polariton gap. It is shown that the Kerr nonlinearity can lead to formation of solitary waves in this region of frequencies.     

Fabrication and characterization of a PbTe quantum dots multilayer structure

Multilayer PbTe quantum dots (QDs) and SiO₂ were grown by pulsed laser deposition (PLD) and Plasma enhanced chemical vapor deposition (PECVD) techniques. The crystalline structure, QD size and size dispersion were observed by high-resolution transmission electron microscopy (HRTEM) measurements. This technique allows one to grow PbTe QDs as small as 1.8 nm diameter and 0.6 nm size dispersion. The whole structure can be used in a Fabry–Perot cavity for an optical device operating at the mid-infrared region.     

Electrochemical C-V Characteristics and Photoluminescence of a-C∶N Films

Amorphous carbon (a-C) films and amorphous carbon films incorporating with the nitrogen (a-C∶N) were deposited on silicon substrates in a radio-frequency driven plasma enhanced chemical vapour deposition system, while the surface electrical properties of films were investigated by electrochemical capacitance-voltage measurements. It was examined the effect of the interface defects on the properties and deduced that the conducting type of a-C∶N films was n-type. Subsequently, a comparative studies of a-C and a-C∶N films were performed by photoluminescence spectra depending on the temperature. With the decrease of the temperature, the main band with peak energy of 2.48 eV in the a-C∶N films was more intense compared with the other three bands caused by amorphous C in the a-C films.     

High power CW solid-state multilaser system

A laser system containing four CW Nd:YAG double-rod lasers, transforming optics and a fibre with input-output optics has been designed and investigated. It is shown that reduction of the beam parameter product of the non-Gaussian beams in the image space of the lens has made it possible to collect the emission of four lasers to the same fibre. Independent laser operation has provided the output power control in the range of 10–900 W with a stable light spot size on the input end of the fibre.