全文获取类型
收费全文 | 829篇 |
免费 | 237篇 |
国内免费 | 186篇 |
专业分类
化学 | 76篇 |
晶体学 | 12篇 |
数学 | 26篇 |
物理学 | 405篇 |
无线电 | 733篇 |
出版年
2024年 | 4篇 |
2023年 | 32篇 |
2022年 | 30篇 |
2021年 | 26篇 |
2020年 | 29篇 |
2019年 | 27篇 |
2018年 | 39篇 |
2017年 | 49篇 |
2016年 | 39篇 |
2015年 | 59篇 |
2014年 | 57篇 |
2013年 | 67篇 |
2012年 | 54篇 |
2011年 | 84篇 |
2010年 | 65篇 |
2009年 | 41篇 |
2008年 | 79篇 |
2007年 | 45篇 |
2006年 | 68篇 |
2005年 | 39篇 |
2004年 | 34篇 |
2003年 | 25篇 |
2002年 | 34篇 |
2001年 | 28篇 |
2000年 | 19篇 |
1999年 | 13篇 |
1998年 | 25篇 |
1997年 | 15篇 |
1996年 | 23篇 |
1995年 | 7篇 |
1994年 | 11篇 |
1993年 | 9篇 |
1992年 | 10篇 |
1991年 | 6篇 |
1990年 | 8篇 |
1989年 | 10篇 |
1988年 | 9篇 |
1987年 | 3篇 |
1985年 | 3篇 |
1984年 | 4篇 |
1983年 | 2篇 |
1982年 | 3篇 |
1981年 | 3篇 |
1980年 | 5篇 |
1979年 | 1篇 |
1978年 | 1篇 |
1977年 | 2篇 |
1976年 | 3篇 |
1974年 | 1篇 |
1973年 | 1篇 |
排序方式: 共有1252条查询结果,搜索用时 33 毫秒
1.
Poly (linoleic acid)-g-poly(methyl methacrylate) (PLiMMA) graft copolymer was synthesized and characterized. PLiMMA graft copolymer was synthesized from polymeric linoleic acid peroxide (PLina) possessing peroxide groups in the main chain by free radical polymerization of methyl methacrylate. Later, PLiMMA was characterized by proton nuclear magnetic resonance (1H NMR), gel permeation chromatography (GPC), thermal gravimetric analysis (TGA) and differential scanning calorimetry (DSC) techniques. Furthermore, Au/PLiMMA/n-Si diode was fabricated for the purpose of investigating PLiMMA׳s conformity in diodes. The main electrical characteristics of this diode were investigated using experimental current–voltage (I–V) measurements in dark and at room temperature. Obtained results, such as sufficiently high rectifying ratio of 4.5×104, indicate that PLiMMA is a promising organic material for electronic device applications. 相似文献
2.
A self-assembly patterning method for generation of epitaxial CoSi2 nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n+-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO2 and 300 nm Si3N4. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi2 layer and a subsequent out-diffusion process to form the n+-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated. 相似文献
3.
4.
The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the
n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed
and its concentration was affected by the Sb4/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb
grown at 550°C under a Sb4/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized
surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized
impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity
was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb
layers were studied by comparing their photoluminescence spectra at 4.5K. 相似文献
5.
The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems. 相似文献
6.
The article concerns heterojunction resonant cavity-enhanced (RCE) Schottky photodiodes with GaAs in the absorption layer. The quantum efficiency and linear pulse response have thoroughly been analysed. For the first time, the response of a heterojunction photodiode has been modelled by the phenomenological model for a two-valley semiconductor. The results obtained have shown that the satellite valleys, as well as the parasitic time constant, significantly influence the response and, accordingly, have to be taken into account when analysing and optimizing RCE photodetectors. 相似文献
7.
Olga Bori Timo J. Tolmunen Erik Kollberg Margaret A. Frerking 《International Journal of Infrared and Millimeter Waves》1992,13(6):799-814
The S-parameters of several different quantum well double barrier diodes have been measured. A technique has been developed for measuring whisker contacted diodes with and HP 8510B automatic network analyzer. Special coaxial mounts using K-connectors were designed to enable measurements up to 20 GHz. The voltage-dependent conductance and capacitance were derived from the measured reflection coefficient of each device. The C/V characteristics were observed to exhibit an anomalous increase at voltages corresponding the the negative differential resistance region (NDR). These are the first reported S-parameter measurements in the negative differential resistance region of quantum well double barrier diodes. A theory is presented that explains, in part, the observed results. 相似文献
8.
Yasuo Koide T. Kawakami Masanori Murakami N. Teraguchi Y. Tomomura A. Suzuki 《Journal of Electronic Materials》1998,27(6):772-775
Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe
grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage
(J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C−2-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety
of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level
lower than 0.4 eV and/or increase of doping concentrations to a level higher than 1020 cm−3 are essential to obtain an ohmic contact with contact resistivity of around 10−3 Ω·cm2. 相似文献
9.
将具有完全晶格匹配势垒增强层的MSM-PD简化为一维模型,并通过理论分析,得出了它的暗电流特性,进一步得到器件暗电流与势垒增强层的关系。 相似文献
10.
We have proposed a mechanism of nonideality, i.e., the temperature dependence of the ideality factor, in nearly ideal Au/n-Si Schottky barriers. Because of the nature of metal-induced gap states, positively ionized defects close to the interface are considered to cause local lowering of the Schottky barrier height (SBH) due to downward bending of the energy band. These positively charged defects become neutralized in equilibrium with the Fermi level due to the band bending, when they are very close to the interface. However, because the SBH lowering disappears by the neutralization of donor, the energy level of donor with a usual energy level scheme rises above the Fermi level after the neutralization. This contradiction to the equilibrium neutralization is resolved by Si self-interstitial with a large negative-U property, which is generated by the fabrication process. The energy level of the donor estimated from the SBH lowering is in good agreement with that of theoretical calculation of Si self-interstitial. Thus, the defect is concluded to be the Si self-interstitial, which is distributed to more than 10 Å depth from the interface. 相似文献