Surface morphologies of anthracene single crystals grown from vapor phase

The morphologies and lattice structures of anthracene single crystals grown from the vapor phase were investigated using optical microscopy, phase contrast microscopy, atomic force microscopy (AFM), and X-ray diffraction analysis. Common morphologies with hexagonal large planes were observed irrespective of crystal size. The observation of certain surface morphologies with a phase contrast microscopy revealed that the spiral steps originated from screw dislocations present on the (0 0 1) planes. Moreover, the center and edge of the (0 0 1) planes had large curvatures, similar to hills. Resultantly, quarter-monolayer (ML) steps were observed on the large and flat planes between both hills.     

Structure and defects at Y2BaCuO5 interfaces in melt-textured YBa2Cu3Ox superconductors

Y₂BaCuO₅ (211) inclusions are prominent microstructural features found in melt-textured YBa₂Cu₃O_x (123) superconductors. These particles are of interest because the 123/211 interfaces and the interface-associated defects have been proposed to be flux pinning centers. In addition, the 211 particles are believed to be heterogeneous nucleation centers of dislocation which can increase the critical current density of 123. Unfortunately, only limited studies have been performed on these particles to ascertain their roles in flux pinning. In this investigation, 211 particles, the interfacial structure and defects in undeformed and mechanically deformed melt-textured 123 have been studied by transmission electron microscopy. It was found that there appears to be a preferred orientation between large oblong 211 particles and the 123 matrix. In addition, while the 123/211 interfaces in undeformed 123 are sharp and relatively undistorted, the interfaces in deformed 123 samples are much thicker. Also, the distribution of strained regions and dislocations around oblong 211 particles in undeformed 123 is nonuniform; the interfaces of low surface curvature are relatively free of defects while the surfaces of high curvature are abundant in dislocations. In contrast, the 123/211 interfaces in deformed 123 samples contain high density of dislocations regardless of interface curvature.     

Synthetic diamond electrodes: Photoelectrochemical behavior of vacuum-annealed undoped polycrystalline diamond films

The photocurrent and photopotential for undoped polycrystalline diamond film electrodes prepared by chemical vapor deposition and annealed in vacuum at 1500–1640°C are measured. The metal-like samples (annealed at 1630°C) have a negligible photosensitivity. Judging from the positive sign of the photopotential and the cathodic direction of the photocurrent, the material under study formally behaves as a p-type semiconductor. The photoeffects are presumably caused by structure defects, in particular, the dislocations in diamond crystallites formed close to intercrystalline boundaries during the high-temperature annealing.Translated from Elektrokhimiya, Vol. 41, No. 3, 2005, pp. 343–349.Original Russian Text Copyright © 2005 by Pleskov, Krotova, Ralchenko, Khomich, Khmelnitskii.     

外延生长的Gd掺杂CeO2薄膜内位错的透射电子显微学表征

利用脉冲激光沉积（ pulsed laser depositon, PLD）方法在YSZ（ Y2 O3 stabilised zirconia）单晶衬底上外延生长了Gd掺杂的CeO2薄膜（gadolinium doped CeO2,GDC）。利用透射电子显微镜（TEM）对GDC／YSZ界面以及GDC薄膜内部的位错结构进行了表征。实验发现,界面处存在周期性分布的失配位错,界面失配主要通过失配位错释放。 GDC薄膜内部存在两种不同的位错,其中一种为纯刃型位错,另外一种为混合型位错。     

Grain size effects on microstructural stability and creep behaviour of nanotwinned Ni free-standing foils at room temperature

Creep tests were performed on the high stacking fault energy (SFE) nanotwinned (NT) Ni free-standing foils with nearly the same twin thickness at room temperature (RT) to investigate the effects of grain size and loading rate on their microstructural stability and creep behaviour. The grain growth mediated by the twinning/detwinning mechanism at low applied stresses (<800 MPa) and grain refinement via the detwinning mechanism at high applied stresses (>800 MPa) were uncovered in the present NT-Ni foils during RT creep, both of which are attributed to the interactions between dislocations and boundaries. It appears that a higher initial dislocation density leads to a faster primary creep strain rate and a slower steady-state creep strain rate. Unlike the non-twinned metals in which grain growth often enhances the creep strain rate, the twinning/detwinning-mediated grain growth process unexpectedly lowers the steady-state creep strain rate, whereas the detwinning-mediated grain refinement process accelerates the creep strain rate in the studied NT-Ni foils. A modified phase-mixture model combined with Arrhenius laws is put forward to predict the scaling behaviour between the creep strain rate and the applied stress, which also predicts the transition from grain growth-reduced to grain refinement-enhanced steady-state creep strain rate at a critical applied stress. Our findings not only provide deeper insights into the grain size effect on the mechanical behaviour of nanostructured metals with high SFE, but also benefit the microstructure sensitive design of NT metallic materials.     

Hardness and slip systems of orthorhombic hen egg-white lysozyme crystals

Hardness and slip systems by an indentation method were investigated on different habit planes of orthorhombic hen egg-white lysozyme (O-HEWL) crystals containing water. A dependence of the hardness on the water-evaporation time exhibits three stages as incubation, transition and saturated ones, as tetragonal (T)-HEWL crystals reported previously. The hardness values of (1 1 0), (0 1 0) and (0 1 1) habit planes of O-HEWL in the incubation stage or wet condition exhibits 6, 8 and 10 MPa, respectively. The hardness depends on indented planes but it is independent of the air-humidity and crystal volumes. These values correspond to the intrinsic hardness for O-HEWL crystals containing water. In the incubation stage, the slip traces are clearly observed around the indentation mark and the corresponding six kinds of slip systems are identified to be {0 1 1}<1 0 0>, {1 1 0}<1 1 0>, {0 1 1}<0 1 1>, {1 1 0}<0 0 1>, {1 0 0}<0 0 1> and {0 1 0}<0 0 1>.     

Low-Energy Dislocation Structure (LEDS) character of dislocation boundaries aligned with slip planes in rolled aluminium

For the specific slip geometry of two sets of coplanar systems (a total of four systems) in fcc metals, the range of dislocation networks in boundaries aligned with one of the two active slip planes is predicted from the Frank equation for boundaries free of long-range elastic stresses. Detailed comparison with experimental data for eight dislocation boundaries in cold-rolled aluminium grains of the 45° ND rotated Cube orientation is conducted. It is concluded that the boundaries are Low-Energy Dislocation Structures, which are in good agreement with the Frank equation while also lowering the energy by dislocation reactions. Cross slip plays a role in the boundary formation process.