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1.
We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel. 相似文献
2.
研究了红外频段非线性s偏振表面波在反铁磁晶体和电介质交界面上的频率特性,求出了非线性色散方程,揭示了非线性s偏振表面波存在一个临界频率,低于这个频率,非线性s偏振表面波的频率范围,发现功率不再是决定导波频率范围的唯一因素,两种材料的介电常数比在这里起了至关重要的作用。 相似文献
3.
Eva Lesanska 《Applications of Mathematics》2002,47(5):411-426
The problem is to determine nonsensitiveness regions for threshold ellipsoids within a regular mixed linear model. 相似文献
4.
GLOBAL ATTRACTOR OF A SPATIALLY DISCRETIZED REACTION-DIFFUSION SYSTEM WITH HAMILTONIAN STRUCTURE 总被引:1,自引:0,他引:1
1HamiltonianStructureinReaction-DifusionsystemConsiderasystemofreaction-difusionequationsut=uxx+f(u,v)vt=vxx+g(u,v){(1.1)wher... 相似文献
5.
This paper considers a problem of nonlinear programming in which the objective function is the ratio of two linear functions and the constraints define a bounded and connected feasible region. Using a coordinate transformation, this problem is transformed into a simpler one, whose geometric interpretation is of particular significance. The transformation leads to a characterization of some special vertices of the feasible region from both the theoretical and operational points of view. 相似文献
6.
7.
Lubomír Kubáček 《Mathematica Slovaca》2007,57(6):571-588
The multivariate model, where not only parameters of the mean value of the observation matrix, but also some other parameters
occur in constraints, is considered in the paper. Some basic inference is presented under the condition that the covariance
matrix is either unknown, or partially unknown, or known.
Supported by the grant of the Council of Czech Republic MSM 6 198 959 214. 相似文献
8.
Adam B. Levy 《Mathematical Programming》2007,110(3):615-639
Numerical methods for solving constrained optimization problems need to incorporate the constraints in a manner that satisfies
essentially competing interests; the incorporation needs to be simple enough that the solution method is tractable, yet complex
enough to ensure the validity of the ultimate solution. We introduce a framework for constraint incorporation that identifies
a minimal acceptable level of complexity and defines two basic types of constraint incorporation which (with combinations)
cover nearly all popular numerical methods for constrained optimization, including trust region methods, penalty methods,
barrier methods, penalty-multiplier methods, and sequential quadratic programming methods. The broad application of our framework
relies on addition and chain rules for constraint incorporation which we develop here. 相似文献
9.
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of the semiconductor disk laser, and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperatures. We can see that: with increasing pump power, the thermal effect of the gain material becomes seriously and causes the saturation of carrier lifetime, so the electron-hole pair created in the absorbtion lay... 相似文献
10.
对于具有周期单元的分层介质材料高反射区的波长范围,提供一种简明的估计分析方法.基于Floquet定理,分析了有限周期单元分层介质的光子带隙特性,给出分层介质的高反射区波长范围.讨论了分层介质高反射区和周期单元禁带之间的关系.计算表明,高反射区和周期单元禁带的中心波长彼此一致.并且,随着分层介质周期单元数的增多,高反射区的深度和带宽就越接近于周期单元禁带的深度和宽度.最后,讨论周期分层介质的光子带隙特性与入射角及其与极化的变化关系.
关键词:
分层介质
带隙特性
周期单元
高反射区 相似文献