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DiaaEldin Khalil Muhammad Khellah Yehea Ismail Vivek De 《Microelectronics Journal》2009,40(11):1523-1530
In this paper, an accurate approach for estimating the dynamic stability of static random access memory (SRAM) is proposed. The conventional methods of SRAM stability estimation suffer from two major drawbacks: (1) using static failure criteria, such as SNM, which does not capture the transient and dynamic behavior of SRAM operation, and (2) using quasi-Monte-Carlo simulation, which approximates the failure distribution, resulting in large errors at the tails where the desired failure probabilities exist. These drawbacks are eliminated by employing accurate simulation-based dynamic failure criteria along with a new distribution-independent, Most-probable-failure-point search technique for accurate probability calculation. Compared to previously published techniques, the proposed dynamic stability technique offers orders of magnitude improvement in accuracy. Furthermore, the proposed dynamic stability technique enables the correct evaluation of stability in real operation conditions and for different dynamic circuit techniques, such as dynamic write back, where the conventional methods are not applicable. 相似文献
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DDF是一种高容量的NAND Flash。以DDF产品为例,研究和讨论了它的Read Disturb测试方法。受测试时间的限制,只能选择局部的存储区间进行DDF的Read Disturb测试。这样局部区间的测试结果是否能够代表整个芯片的性能,设计了一套实验,对这个课题进行了研究和讨论。依据非挥发性记忆体产品的特性,主要以阈值电压的分布为参考来评价DDF芯片性能的一致性和性能恶化趋势的一致度。最后的实验结果证明了这种测试方法的正确性和合理性。这种分析方法也可以用于其他非挥发性记忆体产品的其他可靠性测试项目的评估。 相似文献
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《Microelectronics Reliability》2014,54(12):2801-2812
This paper analyzes SRAM cell designs based on organic and inorganic thin film transistors (TFTs). The performance in terms of static noise margin (SNM), read stability and write ability for all-p organic (Pentacene–Pentacene), organic complementary (Pentacene–C60) and hybrid complementary (Pentacene–ZnO) configurations of SRAM cell is evaluated using benchmarked industry standard Atlas 2-D numerical device simulator. Moreover, the cell behaviour is analyzed at different cell and pull-up ratios. The electrical characteristics and performance parameters of individual TFT used in SRAM cell is verified with reported experimental results. Furthermore, the analytical result for SNM of all-p organic SRAM cell is validated with respect to the simulated result. Besides this, the cell and pull-up ratios of the hybrid and organic SRAM cells are optimized for achieving best performance of read and write operations and thereafter, the results are verified analytically also. The SNM of hybrid cell is almost two times higher than the all-p SRAM, whereas this improvement is just 18% in comparison to the organic memory cell. On the other hand, the organic complementary SRAM cell shows an improvement of 26% and 22% for the read stability in comparison to the all-p organic and hybrid SRAM cells, respectively. Contrastingly, this organic cell demonstrates a reduction of 16% in the SNM and an increment of 76% in write access time in comparison to the hybrid cell. To achieve an overall improved performance, the organic complementary SRAM cell is designed such that the access transistors are pentacene based p-type instead of often used n-type transistor. Favorably, this organic SRAM design shows reasonably lower write access time in comparison to the cell with n-type access OTFTs. Moreover, this cell shows adequate SNM and read stability that too at substantially lower width of p-type access OTFTs. 相似文献
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We consider a Shockley–Read–Hall recombination–drift–diffusion model coupled to Poisson’s equation and subject to boundary conditions, which imply conservation of the total charge. As main result, we derive an explicit functional inequality between relative entropy and entropy production rate, which implies exponential convergence to equilibrium with explicit constant and rate. We report that the key entropy–entropy production inequality ought rather not to be formulated on the states space of the parabolic–elliptic system, but on the reduced states space of the associated nonlocal drift–diffusion problem, where the Poisson equation is replaced by the corresponding Green function. 相似文献
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采用全外延工艺,研制了X波段里德型双漂移崩越二极管所需πpnγN ̄+多层外延材料,分析了各过渡区的形成机理及减小其宽度的方法,实现了陡峭的杂质浓度分布。 相似文献
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The mechanisms governing the activation of dislocation sources in aluminum at different strain rates
This article examines the time to activate Frank–Read sources in response to macroscopic strain rates ranging from 101 s−1 to 1010 s−1 in aluminium under athermal conditions. We develop analytical models of the bowing of a pinned dislocation segment as well as numerical simulations of three dimensional dislocation dynamics. We find that the strain rate has a direct influence on both the activation time and the source strength of Frank–Read sources at strain rates up to 106 s−1, and the source strength increases in almost direct proportion to the strain rate. This contributes to the increase in the yield stress of materials at these strain rates. Above 106 s−1, the speed of the bowing segments reaches values that exceed the domain of validity of the linear viscous drag law, and the drag law is modified to account for inertial effects on the motion of the dislocation. As a result the activation times of Frank–Read sources reach a finite limit at strain rates greater than 108 s−1, suggesting that Frank–Read sources are unable to operate before homogeneous nucleation relaxes elastic stresses at the higher strain rates of shock loading. Elastodynamic calculations are carried out to compare the contributions of Frank–Read sources and homogeneous nucleation of dislocations to plastic relaxation. We find that at strain rates of 5×107 s−1 homogeneous nucleation becomes the dominant generation mechanism. 相似文献
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Toru Asahi Yuko Egawa Atsushi Sugiyama Takanori Kiya Kazuhiro Ouchi 《Journal of magnetism and magnetic materials》2010,322(23):3784-3788
SmCo5 alloy is a promising candidate for ultra-high-density perpendicular magnetic recording (PMR) media because of its high uniaxial magnetocrystalline anisotropy Ku of more than 1.1×108 erg/cm3. Previously, we successfully achieved high Ku in a sputter-deposited SmCo5 thin film by introducing a Cu/Ti dual underlayer. However, in order to apply the SmCo5 films to practical PMR media, it is necessary to decrease medium noise. A granulated magnetic film comprising of small and magnetically decoupled grains is effective in reducing the medium noise. In this paper, we have proposed a new granular film that is fabricated by partial thermodiffusion of Cu between the Sm-Co continuous layer and the Cu underlayer, which is granulated using compositional segregation caused by the addition of Ta2O5. We have analyzed the magnetic properties, magnetic domain size, and magnetization reversal process of the proposed SmCo5 film. The magnetic domain size decreased and the magnetization reversal process changed from the magnetic-wall-motion mode to a coherent rotation mode to some extent on isolation of magnetic grains. The read/write characteristics of granulated SmCo5 double-layered media were also evaluated. The medium noise decreased and the signal-to-noise ratio increased for the granulated double-layered (PMR) medium. 相似文献
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In general, divergences and measures of information are defined for probability vectors. However, in some cases, divergences are ‘informally’ used to measure the discrepancy between vectors, which are not necessarily probability vectors. In this paper we examine whether divergences with nonprobability vectors in their arguments share the properties of probabilistic or information theoretic divergences. The results indicate that divergences with nonprobability vectors share, under some conditions, some of the properties of probabilistic or information theoretic divergences and therefore can be considered and used as information measures. We then use these divergences in the problem of actuarial graduation of mortality rates. Copyright © 2009 John Wiley & Sons, Ltd. 相似文献