IPTV系统中媒体数据接收控制的一种实现

IPTV已经成为未来电视及VOD技术发展的方向，系统介绍IPTV系统中数据流接收的一种实现过程，重点是RTP与一个类RTSP协议的配合，实现数据流的接收与控制。     

CRYSTALLIZATION AND MELTING OF NYLON 610

Differential scanning calorimetry was used to study the crystallization andmelting of nylon 610. For nylon 610 crystallized from the melt state (260℃), the overall rateof bulk crystallization can be described by a simple Avrami equation with Avrami exponentn ≈ 2, independent of crystallization temperature. With the experimentally obtainedT_m~0 (235℃ ～ 255℃) of nylon 610, the fold surface free energy σ_e was determined to be35 ～38 erg/cm~2. The effects of annealing temperature and time on the melting of quenchednylon 610 were also investigated. For nylon 610 quenched at room temperature there isonly one DSC endotherm peak DSC scans on annealed samples exhibited an endothermpeak at approximately 10℃ above the annealing temperature. The size and position of theendothermic peak is strongly related to annealing temperature and time. An additionalthird melting was observed when quenched nylon 610 was annealed at high temperaturefor a sufficiently long residence time. The existence of the third melting peak suggests thatmore than one kind of distribution of lamella thickness may occur when quenched nylon610 is annealed. The implications of these results in terms of crystal thickening mechanismwere discussed.     

The effect of copper content on the reactivity of Cu/Co6Al2 solids in the catalytic steam reforming of methane reaction

The steam reforming of methane over Cu/Co₆Al₂ mixed oxides with different copper contents was studied. The Co₆Al₂ support was prepared via the hydrotalcite route. It was thermally stabilized at 500 °C, impregnated with 5 wt.%, 15 wt.% or 25 wt.% copper using copper (II) nitrate Cu(NO₃)₂·3H₂O precursor and then calcined again at 500 °C under an air flow. The impregnation of copper enhanced significantly the reactivity of the solids in the considered reaction. The 5Cu/Co₆Al₂ solid was the most reactive one, with a methane conversion of 96% at 650 °C. The selectivities of H₂ and CO₂ were also better for the catalyst containing 5 wt.% copper compared to higher copper loadings. The decrease in the catalytic reactivity with increasing the copper content was attributed to the formation of agglomerated and less reactive CuO species, which were detected by XRD and TPR analyses.     

Time‐resolved investigation of Cu(In,Ga)Se2 growth and Ga gradient formation during fast selenisation of metallic precursors

Ga segregation at the backside of Cu(In,Ga)Se₂ solar cell absorbers is a commonly observed phenomenon for a large variety of sequential fabrication processes. Here, we investigate the correlation between Se incorporation, phase formation and Ga segregation during fast selenisation of Cu–In–Ga precursor films in elemental selenium vapour. Se incorporation and phase formation are analysed by real‐time synchrotron‐based X‐ray diffraction and fluorescence analysis. Correlations between phase formation and depth distributions are gained by interrupting the process at several points and by subsequent ex situ cross‐sectional electron microscopy and Raman spectroscopy. The presented results reveal that the main share of Se incorporation takes place within a few seconds during formation of In–Se at the top part of the film, accompanied by outdiffusion of In out of a ternary Cu–In–Ga phase. Surprisingly, CuInSe₂ starts to form at the surface on top of the In–Se layer, leading to an intermediate double graded Cu depth distribution. The remaining Ga‐rich metal phase at the back is finally selenised by indiffusion of Se. On the basis of a proposed growth model, we discuss possible strategies and limitations for the avoidance of Ga segregation during fast selenisation of metallic precursors. Solar cells made from samples selenised with a total annealing time of 6.5 min reached conversion efficiencies of up to 14.2 % (total area, without anti‐reflective coating). The evolution of the Cu(In,Ga)Se₂ diffraction signals reveals that the minimum process time for high‐quality Cu(In,Ga)Se₂ absorbers is limited by cation ordering rather than Se incorporation. Copyright © 2014 John Wiley & Sons, Ltd.     

ZnTe(ZnTe∶Cu)多晶薄膜的XPS研究

用共蒸发法在室温下制备了ZnTe及ZnTe∶Cu多晶薄膜,测量了电导率温度曲线,发现不掺杂的ZnTe薄膜的暗电导随温度的增加而线形增加,呈常规的半导体材料特征;掺Cu的ZnTe薄膜在温度较低时,lnσ随温度升高而缓慢增加,随后缓慢降低,达到一极小值,当温度继续升高时又陡然增加,呈现异常现象。用XPS研究了N₂气氛下退火前后表面状态,发现不掺Cu的ZnTe薄膜呈现富Te现象。掺Cu后Te氧化明显,以ZnTe形式存在的Te明显减少;ZnTe∶Cu薄膜中Zn的含量在退火前后变化明显,退火前,Zn主要以ZnTe形式存在,退火后Zn原子向表面扩散,使表面成分更加均匀,谱峰变宽;退火时,部分Cu原子进入晶格形成Cu_xTe相,引起载流子浓度变化,导致ZnTe∶Cu多晶薄膜的电导温度关系异常。     

基于Windows Mobile 5.0的SIP软电话的设计与实现

为实现在Windows Mobile 5.0上利用Internet技术实现语音通话,本文以SIP为基础采用visual studio2005编译器完成了基于Windows Mobile 5.0的SIP软电话功能.文章中介绍了SIP软电话以及Windows Mobile 5.0开发的基本方法,提出了一种基于Windows Mobile 5.0的SIP软电话的具体实现方案,包括开发环境搭建、软电话结构、软电话信令、语音采集、编解码等.     

亚微米自对准硅化物工艺开发

文章对亚微米自对准硅化物制造设备及工艺进行了详细的描述。文中以实际生产为目标, 以实验数据为依据,对影响自对准硅化物薄膜特性的各项工艺参数进行调试和论证,找出合适的RTP1 温度,并开发出适合自对准硅化物薄膜的工艺标准。     

MPTS转多路SPTS的IP输出实现

介绍了一种接收解码器,它是一种广泛应用于三网融合的信源接收设备,它可以将接收到的MPTS多节目传输流转换为多个SPTS单节目传输流,并且通过TS OVER IP的形式将各个节目分别输出到不同的IP主机或端口.详细介绍了整个系统各个模块的功能和实现过程.     

Ni(Pt)Si硅化物温度稳定性的研究

对比研究了夹层结构N i/P t/N i分别与掺杂p型多晶硅和n型单晶硅进行快速热退火形成的硅化物薄膜的电学特性。实验结果表明,在600~800°C范围内,掺P t的N iS i薄膜电阻率低且均匀,比具有低电阻率的镍硅化物的温度范围扩大了100~150°C。依据吉布斯自由能理论,对在N i(P t)S i薄膜中掺有2%和4%的P t样品进行了分析。结果表明,掺少量的P t可以推迟N iS i向N iS i2的转化温度,提高了镍硅化物的热稳定性。最后,制作了I-V特性良好的N i(P t)S i/S i肖特基势垒二极管,更进一步证明了掺少量的P t改善了N iS i肖特基二极管的稳定性。     

热退火对GaAs半导体晶片均匀性的影响

主要讨论热退火(850℃退火2小时)对GaAs半导体晶片的位错密度和电阻率的影响,阐述了位错密度的分布与电阻率分布之间的关系。通过特殊的实验方法得到的结果证明:适当的退火处理将改善GaAs晶片中缺陷密度、电阻率的大小及分布,从而得到均匀性较好的GaAs材料。