基于DOCSIS标准的HFC数据加密算法的分析

基于DOCSIS标准的增强型基线保密性接口（BPI＋）采用56bit DES加密分组数据，采用二密钥三重DES加密通信量加密密钥。这种多重加密技术的应用为HFC网络的数据传输提供了相当于或更好于专线级的网络安全与加密性能。     

ICP-AES测定饮用水源中的Cu、Mn、Pb、Cd、Zn

用ICP－AES法同时测定饮用水源中的Cu、Mn、Pb、Cd、Zn等重金属元素，具有基体效应小、测量范围宽等优点。检出限为0．2－4．0μg/L，回收率为91．5％－103．9％，相对标准偏差为0．29％－1．5％，测定密码样与实际样品，结果令人满意。     

Digital CD数字调频激励器的原理和故障实例

本文介绍了Hams公司的Digital CD数字调频激励器的基本工作原理以及故障处理。     

一个安全有效的身份鉴别协议与对应的数字签名方案

本文利用二元一次不定方程和Schnorr身份鉴别协议，构造出一个新的身份鉴别协议，该协议在RSA问题和离散对数问题是难解的假设下是安全的，同时给出了所对应的数字签名方案。     

High-throughput concept for tailoring switchable mirrors

The optical properties, the switching kinetics and the lifetime of hydrogen switchable mirrors based on Mg-Ni alloys are determined with particular regard to the composition of the optically active metal-hydride layer in combination with the thickness of the catalytic capping layer. For this, a high-throughput experiment is introduced. The switching kinetics and the reversibility of switchable mirrors are strongly thickness dependent, though the details hinge on the fine structure of the clustered capping layer. Therefore, the kinetics is correlated with the surface structures of Pd on Mg_yNi_1−y as investigated by scanning tunneling microscopy. The results are explained by the so-called strong metal-support interaction (SMSI) state, characterized by a complete encapsulation of the capping layer clusters by oxidized species originating from the support. The SMSI-effect is less important with increasing Pd-layer thickness, and is suppressed by a good wetting of the Pd-clusters on the optically active film. This explains the critical thickness for the catalyzed hydrogen uptake observed in many switchable mirror systems. Moreover, the degradation of the kinetics during cycling is found to depend on the Pd-layer thickness and on the gas environment. Only films, covered with at least 15 nm Pd, show small degradation caused by the SMSI-effect. The SMSI-effect is partly reversible: after changing the gas environment from hydrogen to oxygen, the oxide on the Pd-clusters can be partly removed.     

256比特的混沌分组密码

由于密码分析研究的进展及DES自身的弱点,原64比特的DES将不能作为数据加密的标准算法而长期存在。在原来工作的基础上,本文提出了256比特的分组密码方案。密码算法由基于混沌映射的数字滤波器构造。     

Dependence of calculated electron effective attenuation lengths on transport mean free paths obtained from two atomic potentials

We report changes in electron effective attenuation lengths (EALs) resulting from use of transport mean free paths (TMFPs) obtained from the Dirac–Hartree–Fock (DHF) potential instead of the Thomas–Fermi–Dirac (TFD) potential in an algorithm used in the National Institute of Standards and Technology (NIST) Electron Effective‐Attenuation‐Length Database (SRD 82). TMFPs from the former potential are believed to be more reliable than those obtained from the latter potential. We investigated changes in the EALs for selected photoelectron and Auger‐electron lines in four elemental solids (Si, Cu, Ag, and W), for Si 2p photoelectrons of varying energy in SiO₂, and for photoelectrons excited by Al Kα X rays in four candidate gate‐dielectric materials (HfO₂, ZrO₂, HfSiO₄, and ZrSiO₄). For each material, we computed the change in the average EAL for a range of overlayer‐film thicknesses from zero to a maximum value corresponding to attenuation of the substrate signal to 10% of its original value. This EAL change was a maximum for electrons emitted normally from the surface and decreased monotonically with increasing emission angle. The maximum EAL change varied between ?4.4% and 2.6% for the three groups of materials. We found that the maximum EAL change correlated mainly with the TMFP change. We found that TMFP changes in other solids could generally lead to maximum EAL changes between ?2.6% and 1.9% for electron energies between 500 and 2000 eV. For lower energies, the maximum EAL changes could be larger for some solids. Our revised EALs for Si 2p photoelectrons in SiO₂ excited by Mg and Al Kα X rays agree within 0.5% with values reported by Seah and Spencer from a detailed analysis of SiO₂ film‐thickness measurements by XPS and other techniques. Copyright © 2006 John Wiley & Sons, Ltd.     

ARL—3520AES电感耦合等离子体发射光谱仪疑难故障的分析与排除

介绍了在瑞士ＡＲＬ公司生产的ＩＣＰ－３５２０ＡＥＳ型电感耦合等离子体原子发射光谱仪上存在的一种疑难故障的分析与排除过程，对同类型仪器的故障分析有借鉴作用。     

Summary of ISO/TC 201 Standard XI. ISO 17974:2002—Surface chemical analysis—High‐resolution Auger electron spectrometers—Calibration of energy scales for elemental and chemical‐state analysis

This International Standard specifies a method for calibrating the kinetic energy scales of Auger electron spectrometers for elemental and chemical‐state analysis at surfaces. It is only applicable to instruments that incorporate an ion gun for sputter cleaning. This International Standard further specifies a method to establish a calibration schedule, to test for the kinetic energy scale linearity at one intermediate energy, to confirm the uncertainty of the scale calibration at one low and one high kinetic energy value, to correct for small drifts of that scale and to define the expanded uncertainty of the calibration of the kinetic energy scale for a confidence level of 95%. This uncertainty includes contributions for behaviours observed in interlaboratory studies but does not cover all of the defects that could occur. This International Standard is not applicable to instruments with kinetic energy scale errors that are significantly non‐linear with energy, to instruments operated at relative resolutions poorer than 0.2% in the constant ΔE/E mode or poorer than 1.5 eV in the constant ΔE mode, to instruments requiring tolerance limits of ±0.05 eV or less or to instruments equipped with an electron gun that cannot be operated in the energy range 5–10 keV. This standard does not provide a full calibration check, which would confirm the energy measured at each addressable point on the energy scale and should be performed according to the manufacturer's recommended procedures. Crown Copyright © 2003. Published by John Wiley & Sons, Ltd.     

XPS and AES characterization of hydrolysed γ‐mercaptopropyltrimethoxysilane deposited on Al,Zn and Al–43.4Zn–1.6Si alloy‐coated steel

In this paper Al, Zn and Al–43.4Zn–1.6Si (AlZn) alloy‐coated steel have been treated with the organofunctional silane γ‐mercaptopropyltrimethoxysilane (γ‐MPS). The influence of different metal substrates on the structure and composition of the silane films was investigated with XPS and AES. The films were obtained by dipping the substrates in the silane solution followed by a blow‐dry procedure in nitrogen gas. The results show that the surface concentration of the deposited silane is independent of the metal substrate and that the thickness of the silane film is non‐uniform. The AES measurements indicate that the silane film covers the entire substrate surface and XPS analysis of the silane‐treated substrate surfaces at different take‐off angles indicates that the γ‐MPS molecule is randomly orientated. Also, the results show that the silane is well hydrolysed under the solution conditions used. Finally, in the zinc‐containing silane‐metal systems, i.e. the silane‐treated AlZn and Zn substrates, the results indicate that the γ‐MPS molecules can bond to the substrate surfaces via the thiol group of the molecule. Copyright © 2004 John Wiley & Sons, Ltd.