1.55μm Si基光电探测器的研究进展

从材料的生长、器件结构的选择等方面对1．55μm锗光电探测器的研究进展进行了综述，对Ge量子点共振腔增强型光电探测器的应用前景进行了探讨与展望。     

A study of direct- and pulse-current chromium electroplating on rotating cylinder electrode (RCE)

Direct- and pulse-current (DC and PC) chromium electroplating on Cr-Mo steel were performed in a sulfate-catalyzed chromic acid solution at 50 °C using a rotating cylinder electrode (RCE). The electroplating cathodic current densities were at 30, 40, 50 and 60 A dm⁻², respectively. The relationship between electroplating current efficiency and the rotating speed of the RCE was studied. The cross-sectional microstructure of Cr-deposit was examined by transmission electron microscope (TEM). Results showed that DC-plating exhibited higher current efficiency than the PC-plating under the same conditions of electroplating current density and the rotating speed. We found the critical rotating speed of RCE used in the chromium electroplating, above this rotating speed the chromium deposition is prohibited. At the same plating current density, the critical rotating speed for DC-plating was higher than that for PC-plating. The higher plating current density is, the larger difference in critical rotating speeds appears between DC- and PC-electroplating. Equiaxed grains, in a nanoscale size with lower dislocation density, nucleate on the cathodic surface in both DC- and PC-electroplating. Adjacent to the equiaxed grains, textured grains were found in other portion of chromium deposit. Fine columnar grains were observed in the DC-electroplated deposit. On the other hand, very long slender grains with high degree of preferred orientation were detected in PC-electroplated deposit.     

长波长、高灵敏度的InP／InGaAs谐振腔光电探测器

本文报道了一种能够实现高速、高灵敏度的InP基谐振腔增强型（RCE）光电探测器。它采用衬底入光方式，解决了在InP衬底上外延生长的InP/InGaAs介质膜分布布拉格反射镜（DBR）反射率低的问题，该探测器的吸收层厚度为0.2μm，在波长1.583μm处获得了80%的峰值量子效率，同时为了降低探测器的固有电容，利用质子注入技术使得器件的部分电极绝缘，实验结果表明质子注入不影响RCE光电探测器的量子效率。     

Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors

A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99.9%.A Si.based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22.6% at the peak wavelength of 1.54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.     

硅基1.55μm共振腔增强型探测器

报道了一种利用硅乳胶作为键合介质的新型键合技术.高反射率的SiO2/Si反射镜预先用PECVD系统生长在硅片上,然后键合到InGaAs有源区上,键合温度为350℃,无需特殊表面处理,反射镜的反射率可以高达99.9%以上,制作工艺简单,价格便宜.并获得硅基峰值响应波长为1.54μm,量子效率达22.6%的窄带响应,峰值半高宽为27nm.本方法有望用于工业生产.     

SiGe共振腔增强型探测器的制备

利用SOI材料的埋层二氧化硅的自停止特性,成功制作了具有高反射底镜的共振腔增强型SiGe探测器.底镜沉积于EPW腐蚀液腐蚀形成的背孔内,在1.2～1.5μm范围内,反射率高达99%.探测器的共振峰在1.344μm,光响应为1.2mA/W.与普通结构的探测器相比,文中所报道的探测器光响应有8倍的增强.     

A GI/Geo/1 queue with negative and positive customers

The arrival of a negative customer to a queueing system causes one positive customer to be removed if any is present. Continuous-time queues with negative and positive customers have been thoroughly investigated over the last two decades. On the other hand, a discrete-time Geo/Geo/1 queue with negative and positive customers appeared only recently in the literature. We extend this Geo/Geo/1 queue to a corresponding GI/Geo/1 queue. We present both the stationary queue length distribution and the sojourn time distribution.     

SiGe共振腔增强型探测器的制备

利用SOI材料的埋层二氧化硅的自停止特性,成功制作了具有高反射底镜的共振腔增强型SiGe探测器.底镜沉积于EPW腐蚀液腐蚀形成的背孔内,在1.2～1.5μm范围内,反射率高达99%.探测器的共振峰在1.344μm,光响应为1.2mA/W.与普通结构的探测器相比,文中所报道的探测器光响应有8倍的增强.     

新型解复用接收器件：理论分析与实验研究

本文对一镜斜置三镜腔光电探测器进行理论分析及实验验证。一镜斜置三镜腔结构是一种新型高性能的光电探测器结构,斜境使滤波波腔与吸收腔之间解耦,因此这种结构的探测器可以同时获得高的量子效率、高的响应效率和窄的光谱响应线宽。本文在理论分析的基础上,利用分立光学器件对斜镜的解耦作用进行了实验验证。     

基于MEMS技术的光通信器件及其市场前景

介绍了基于MEMS技术的光通信器件主要制造商及其产品情况,并概要分析了MEMS光器件的市场前景和发展方向。