Voltage reference architectures for low-supply-voltage low-power applications

This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm² and 0.08 mm², respectively.     

一种新的解映射算法的推导和实现

本文在一种16QAM,64QAM,256QAM的解映射算法启发下,提出了新的适合32QAM和128QAM的解映射算法,并在此基础上,给出了适合DVB-C接收机的多QAM解映射结构.然后在FPGA中实现和仿真.最后通过比较说明,相对于传统的查找表解映射方法,提出的解映射算法可以明显减少资源使用率.     

宽带线性调频信号产主技术研究

本文介绍了采用数字基带产生结合倍频链扩展带宽的方法设计与实现了大带宽线性调频信号产生系统。详细分析研究了实现系统的三项关键技术，给出并分析了相应环节的输出信号。对系统进行了预失真补偿处理，成功实现了ＶＨＦ／ＵＨＦ波段、带宽达３００ＭＨｚ线性调频信号的产生。经脉冲压缩处理，主瓣旁瓣比（ＰＳ１Ｒ）在－３７ｄＢ以下。     

Radiative lifetimes in Ce I and Ce II

New radiative lifetime measurements based on time-resolved laser-induced fluorescence techniques are reported for 18 even-parity levels belonging to the 4f5d^26p and 4f ²5d ² configurations of Ce I and 6 even-parity levels belonging to the 5d^26s, 4f5d6p, and 4f6s6p configurations of Ce II. Free neutral and singly ionized cerium atoms were produced by laser ablation. The Ce I and Ce II levels range in energy from 26 545 to 29 102 cm^-1, and 42 573 to 48 152 cm^-1, respectively. Received 25 September 2002 Published online 4 March 2003     

一种漂移室定位子性能反常现象的研究

研究了一种漂移室定位子性能的反常现象,它关系到定位子的使用寿命．着重测量了暗电流和随机噪声与时间、高压及温度的关系.     

Theory of a novel voltage-sustaining layer for power devices

The theory of a novel voltage-sustaining layer for power devices, called a Composite Buffer layer (CB-layer for short) is proposed. The CB-layer can be implemented in several ways, one particular implementation is used here, which consists of alternating n- and p-type regions, that are parallel to the direction of the applied electric field. In the off-state, the fields induced by the depletion charges of both region types compensate each other to allowing the doping in both n-regions and p-regions to be very high without causing a reduction of the breakdown voltage. In the onstate the heavy doping ensures the voltage drop is very low and that the saturation current density high. A simple relationship between the specific on-resistance and R_on and the sustaining voltage V_B can be shown to be R_on=2.53 × 10⁻⁷bV_B^1.23 ωcm², where the breadth b (in μm) of each region is much smaller than the thickness W. The design method of the CB-layer is discussed in some detail. The simulation results are shown to be in perfect agreement with the theory. The structure has application to a wide variety of different power devices. An RMOST structure has been used to demonstrate the benefits of the technique in the paper, for which excellent performance is demonstrated.     

WZW–Poisson manifolds

We observe that a term of the WZW-type can be added to the Lagrangian of the Poisson σ-model in such a way that the algebra of the first class constraints remains closed. This leads to a natural generalization of the concept of Poisson geometry. The resulting “WZW–Poisson” manifold M is characterized by a bivector Π and by a closed three-form H such that 1/2[Π,Π]_Schouten=H,ΠΠΠ.     

CAD OF MILLIMETER WAVE OSCILLATORS WITH THE FDHB TECHNIQUE

In this paper the modelling, analysis and optimization of millimeter wave oscillatorsare investigated by using the a frequency-domain harmonic balance technique (FDHB), where theexternal-circuit impedances looking outside from the active device are calculated with a combinedtechnique of modes expansion, Galerkin, and collocation methods. The optimization results arein agreement with the experimental ones, which show the reliability of the presented model andoptimization.     

一种新型宽频带正交线极化馈源设计

本文介绍一种适用于散射通讯用的前馈抛物面宽频带正交器双线极化馈源设计,该馈源工作于0.8GHz频段。实践证明,该馈源在20％的工作带宽内基本上具有近似于旋转对称的波束,且系统VSWR<1.3。因此,对工作于较低频段的天线,该馈源是很好的选型。     

S频段大功率振荡用砷化镓场效应晶体管的微波性能

对WC76型S频段大功率振荡用砷化镓场效应晶体管的微波性能作了介绍。文中给出了测试振荡器的设计。测试结果表明,WC76型振荡管在s频段的微波性能良好,振荡频率在3GHz左右时,输出功率可达3.5w,直流—射频转换效率可达44％,而且在2～4GHz的整个S频段均能满意地工作。