Quantum Dots for Display Applications

This article offers a materials-chemistry perspective for colloidal quantum dots (QDs) in the field of display, including QD-enhanced liquid-crystal-display (QD-LCD) and QD-based light-emitting-diodes (QLEDs) display. The rapid successes of QDs for display in the past five years are not accidental but have a deep root in both maturity of their synthetic chemistry and their unique chemical, optical, and optoelectronic properties. This article intends to discuss the natural match of QD emitters for display and chemical means to eventually bring about their full potential.     

Boosting the performance of solution-processed quantum dots light-emitting diodes by a hybrid emissive layer via doping small molecule hole transport materials into quantum dots

Solution-processed colloidal quantum dot light-emitting diodes (QLED) have attracted many attentions with significant progress in recent years. However, QLED devices still face some challenges. The energy barrier between Cd-base quantum dots (QDs) and commonly used hole transport materials is larger than that between QDs and electron transport materials, which leads to the imbalance of carriers in the light emitting layer (EML) and the low performance of QLED devices. Herein, we report a simple strategy to improve the device performance by doping small molecule transport material 4,4′-cyclohexylidenebis[N,N-bis(p-tolyl)aniline] (TAPC) into red CdSe/ZnS QDs. The optimized red QLED devices with TAPC-doped emissive layer at a ratio of 3.2 wt% achieve 20.0 cd/A of maximum current efficiency, 16.6 lm/W of power efficiency and 15.7% of external quantum efficiency, which is 30%, 58% and 33% higher than the control device. The improved performance of devices can be ascribed to the increase of hole current density, decrease of leakage electrons and more balanced quantity of carriers in EML. This work put forward a viewpoint to improve the performance of QLED devices via doping high hole mobility materials into emission layer.     

量子点发光器件的制备与仿真分析

为研究量子点发光器件结构与性能的关系,制备了以CdSe/ZnS量子点作为发光层、poly-TPD作为空穴传输层,Alq3作为电子传输层的量子点发光二极管,对器件结构及性能参数进行了表征,结果显示器件具有开启电压低、色纯度高等特点.结合测试数据,对量子点发光二极管进行了器件结构建模,利用隧穿模型及空间电荷限制电流模型对实验结果进行了分析,研究了器件中载流子的注入与传输机理.器件测试与仿真结果表明:各功能层厚度会影响载流子在量子点层的注入平衡,同时器件中载流子的注入与传输存在一转变电压,当外加电压低于转变电压时,器件中载流子的注入主要符合隧穿模型;当外加电压高于转变电压时,器件中载流子的注入主要符合空间电荷限制电流模型.研究结果验证了器件结构建模的合理性,可以利用仿真的方法进行器件结构优化并确定相关参数,这对器件性能的提高具有指导意义.     

Electrical and optical properties of light emitting devices with quantum dots dispersed in PVK matrix

ABSTRACT

In this study, we fabricated QD-LEDs with QD emitters dispersed in poly(9-vinylcarbazole) (PVK) matrix. The emission layer was prepared by spin-coating of the PVK solution dispersed with red QD nanoparticles. The concentration of QDs was varied to be 0.5, 2.0, 5.0, and 10.0 mg/ml in PVK solution of 25 mg/ml. As the QD concentration increases, the current efficiency of QD-LED gradually increases and the emission from PVK matrix decreases. In addition, we investigated energy transfer system with QD and organic dopant material using same structure in emissive layer. We obtained a maximum current efficiency of 4.1 cd/A and an external quantum efficiency of 3.0% were achieved at a QD concentration of 5.0 mg/ml in QD-LEDs.     

Recent Progresses in Solution-Processed Tandem Organic and Quantum Dots Light-Emitting Diodes

Solution processes have promising advantages of low manufacturing cost and large-scale production, potentially applied for the fabrication of organic and quantum dot light-emitting diodes (OLEDs and QLEDs). To meet the expected lifespan of OLEDs/QLEDs in practical display and lighting applications, tandem architecture by connecting multiple light-emitting units (LEUs) through a feasible intermediate connection layer (ICL) is preferred. However, the combination of tandem architecture with solution processes is still limited by the choices of obtainable ICLs due to the unsettled challenges, such as orthogonal solubility, surface wettability, interfacial corrosion, and charge injection. This review focuses on the recent progresses of solution-processed tandem OLEDs and tandem QLEDs, covers the design and fabrication of various ICLs by solution process, and provides suggestions on the future challenges of corresponding materials and devices, which are anticipated to stimulate the exploitation of the emerging light technologies.     

量子点背光液晶显示技术的亥姆霍兹-科尔劳施效应

亥姆霍兹-科尔劳施效应（简称H-K效应）指的是人眼对色光的感知亮度随着色纯度的增加而提升的现象。量子点背光技术可显著提升液晶显示的色域和视觉感知亮度,已经在众多显示产品中开始应用。本论文通过观看者亮度感知实验,对比了YAG荧光粉白光LED背光电视（YAG电视）和量子点背光电视（量子点电视）的H-K效应差异,根据Kaiser模型与Nayatani模型分析纯色实验的测试结果,并通过彩色实验探究了显示器的色域对感知亮度与主观偏好的影响。实验结果表明：量子点电视具有更为显著的H-K效应,视觉感知亮度明显高于传统YAG电视;在同样的感知亮度下,量子点电视的纯色R、G的物理亮度仅为YAG电视的75%、86%;鲜艳彩色画面的物理亮度为YAG电视的74%～88%;在相同感知亮度下,高色域的量子点电视更受欢迎,并且喜好趋势将随着亮度的增加而增加。上述结果对于健康显示的发展具有重要指导意义。     

平板显示技术比较及研究进展

平板显示因具有体积小、重量轻、功耗低、画质好等优点,已被广泛应用于电子仪表显示、车载显示、数码相机、智能手机、个人电脑、电视产品等领域之中。本文介绍了薄膜晶体管液晶显示(Thin Film Transistor-Liquid Crystal Display,TFTLCD)、有机发光二极管Organic Light Emitting Diode(OLED)显示、量子点发光二极管Quantum Dot Light Emitting Diode(QLED)显示及微发光二极管(Micro-LED)显示这几种平板显示技术的结构及原理。从结构、材料、性能、应用几方面对这几种平板显示技术进行了比较。最后给出了这几种平板显示技术的最新研究进展。LCD显示经过多年发展,技术成熟,成本低廉,仍然在显示市场占据主流地位。OLED显示技术摆脱了传统LCD的背光源,开创了自发光显示的未来发展方向。在相当一段时期内,LCD和OLED仍将会共存于市场中,相互竞争和补充。QLED显示和Micro-LED显示这两种显示技术,在理论上较OLED显示具有更好的颜色表现、更长的工作寿命等优势,具有非常广阔的发展前景,将为未来显示行业提供更多更好的选择。     

Flexible QLED and OPV based on transparent polyimide substrate with rigid alicyclic asymmetric isomer

A series of isomeric alicyclic-functionalized polyimide with chemical imidization and thermal imidization (CPI-x and TPI-x) were prepared from a rigid alicyclic-functionalized isomerism diamine, 5(6)-amino-1-(4-aminophenyl)-1,3,3-trimethylindane (DAPI). The influences of incorporation of the isomeric rigid alicyclic structure onto the backbone of the polymers were systematically investigated in terms of optical, thermal, mechanical, dielectric and surface properties, respectively. Due to the moderate chemical imidization condition, CPI-x series retain higher glass transition temperature (Tg) in the range of 329–429 °C than the Tg of TPI-x (from 321.9 °C to 370.7 °C). Therefore, the CPI-1 film based 5-DAPI was chosen as the flexible substrate. MoO₃ was chosen as the interface layer to improve the compatibility between PI substrate and the metal electrode. Then a ultra-thin layer of MoO₃ (3 nm)/Au(2 nm)/Ag(4 nm) was utilized to be the transparent electrode. After annealing at 220 °C for 0.5 h, zinc oxide (ZnO) was deposited onto the electrode to maintain the superior electron mobility and improve the transparency of the electrode. Consequently, the flexible quantum dots light emitting diode (QLED) obtained a high luminance of 5230 (cd/m²) and EQE of 5.2%, meanwhile, a device performance of 4.36% was achieved in organic photovoltaic (OPV) devices.     

载流子平衡方法提高量子点发光二极管效率的研究

尝试采用三种方式来平衡载流子的浓度,以提高量子点发光二极管(QLED)的外量子效率等性能:在正装结构(ITO/HIL/HTL/QD/ETL/EIL/金属阴极)的QLED的发光层和电子传输层中间插入超薄聚甲基丙烯酸甲脂(PMMA)电子阻挡层;在空穴注入和传输层方面,通过使用更加优化的HIL等来提高空穴注入和传输几率;在QD发光层方面,用短链配体来置换量子点的长链配体以增加载流子向量子点发光层中的传输效率等。在进行量子点配体交换的同时带来了量子点在正交溶剂中的可溶性优势,有利于QLED器件的全溶液法制备。     

Solution-processed quantum dot light-emitting diodes based on NiO nanocrystals hole injection layer

Nickel oxide (NiO), as a kind of p-type transition metal oxide (TMO) has shown promising applications in photoelectric devices. In our work, the NiO nanocrystals (NCs) are fabricated by a simple solvothermal method using tert-butyl alcohol and nickel acetylacetonate as precursors at 200 °C for different reaction times. The diameters and valence band edge of the prepared NiO NCs are increased with the increase reaction time from 12 h, 24 h–36 h. The band gaps of the NiO NCs were decreased with the increase time. Selected area electron diffraction (SAED) shows that the NiO NCs is polycrystalline structure. X-ray diffraction (XRD) indicates that the NiO NCs is cubic crystal form. X-ray photoelectron spectroscopy (XPS) shows that the as-prepared NiO NCs have a core of NiO and some form of Ni₂O₃ and NiOOH states on its surface. Further, the obtained NiO NCs is applied on quantum dot light-emitting diode (QLED) as hole injection layer (HILs), showing excellent hole injection properties. Particularly, the NiO NCs for 24 h obtains the best results due to its high band gap and pure cubic crystal phase. Highly bright orange-red QLED with peak luminance up to ∼25580 cd m⁻², and current efficiency (CE) of 5.38 cd A⁻¹ are achieved successfully based on the high performance NiO HIL, further, the device obtained relative long operational lifetime of 11491 h, which has been improved by more than 6- fold as compared to 1839 h for the device based on PEDOT.