Synthesis based structural and optical behavior of anatase TiO2 nanoparticles

The effect of synthesis method on optical and photoconducting properties of titanium dioxide (TiO₂) nanoparticles has been investigated. Sol–gel and co-precipitation methods have been employed to prepare pure anatase phased TiO₂ nanoparticles calcinated at different temperatures below 500 °C. The optimized value of average crystallite size is within the range of 19−21 nm for a common calcination temperature of 400 °C for both the methods. The redshift in optical band gap of 0.9 eV has been observed for the sample synthesized by co-precipitation method with respect to the sol–gel method. The photoluminescence spectrum exhibits broad visible emission in both routes of synthesis while photoconductivity shows fast growth and decay of photocurrent in TiO₂ prepared by co-precipitation method as compared to TiO₂ prepared by the sol–gel method under visible illumination. Crystal structure based Rietveld refinement of X-ray diffraction data, scanning electron microscopy as well as photoluminescence and photoconductivity measurements were performed to characterize nanocrystalline anatase TiO₂.     

Photoluminescence and electric spectroscopy of dislocation-induced electronic levels in semi-insulated CdTe and CdZnTe

We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared photoluminescence (PL), contact less photoconductivity and resistivity. Plastic deformation increased the concentrations of grown-in defects, namely, those of an important midgap level E_C−0.74 eV in CdTe and Cd_1−xZn_xTe (x<0.1), the materials of choice in today’s X-ray and gamma ray detector technology. We confirmed the direct correlation between Y-emission and the dislocation density in both compounds. The Y-band intensified near an indenter deformation or near a scribing line, but was barely visible in low-dislocation areas (etch pit density <2×10⁵ cm⁻²). Our results correlate with recent findings that dislocation-induced defects and their clusters degrade charge collection in radiation detectors. Photoluminescence of midgap levels can serve as a tool to identify areas of degraded performance in semi insulated CdTe and CdZnTe crystals for radiation detectors.     

Interband photoconductivity of Ge/Si structures with self-organized quantum rings

At low temperatures a lateral photoconductivity (PC) of Ge/Si (1 0 0) self-organized quantum rings (QRs) structures as a function of interband light intensity has been investigated for different values of lateral voltage and temperature. In contrast to self-organized Ge/Si quantum dots (QDs) structures (grown at the same conditions) where the stepped PC was registered, for QRs structures essential smoothing of PC steps was observed. Such behavior is determined by decreasing of strain potential around QRs in conductive Si matrix due to a transfer of Ge atoms from the center of QDs to its periphery accompanied by Ge/Si intermixing.     

Study of photoconductivity and photoluminescence of organic/porous silicon complexes

In this paper, time-varying photoconductivity (PC) and the photoluminescence (PL) of different complexes were studied. Due to thick polymer layer hindering light penetrating into porous silicon (PS) layer, intrinsic PS luminescence in polymer/PS system disappeared. The physical origin of PL may be related to the recombination mechanisms involving surface defect states such as silicon oxide, siloxene. Due to carrier transfer controlled by different energy barrier, different devices prepared from different doped Si wafer showed opposite current-voltage characteristic.     

Effect of sol concentration on the properties of ZnO thin films prepared by sol-gel technique

ZnO thin films are deposited on the glass substrates by sol-gel drain coating technique by varying the concentration of the sol. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis were used to investigate the effect of sol concentration on the crystallinity and surface morphology of the films. The results show that with increase in sol concentration, the value of full width at half maximum (FWHM) of (0 0 2) peak decreases while the strain first increases and then decreases. The sol with higher concentration results in the increase in the grain size. The studies on the optical properties show that the band gap value increases from 3.27 to 3.3 eV when the sol concentration changes from 0.03 to 0.1 M. The photoconductivity studies reveal that the film for 0.05 M sol shows the maximum photoresponse for ultraviolet (UV) wavelength (<400 nm) which is co-related with the deep-level defects. The growth and decay of the photocurrent is found to be slowest for the same film.     

Synthesis, characterization and enhanced photoconductivity from a mesoporous titania on dye doping

New wormhole-like mesoporous TiO₂ material has been synthesized through a convenient sol-gel method in the presence of a Schiff base secondary amine hexadecyl-2-pyrrole-methylamine (HPMA) containing chelating donor sites as template or structure directing agent (SDA). SDA molecules can be easily removed from the composite to generate mesoporosity and upon removal of the SDA molecule, this mesoporous TiO₂ material showed very high surface area (480 ± 10 m²/g) with an average pore diameter of 2.57 ± 0.05 nm. When Rose Bengal dye is entrapped inside the nanopores of this material, it showed a drastic enhancement (ca. 40-folds) in the photoconductivity vis-à-vis mesoporous TiO₂ alone under white light illumination.     

Preparation and properties of SnS film grown by two-stage process

SnS films have been prepared by a novel two-stage process. It involved sputtering of Sn film on glass substrate and sulfurization of the thin metallic tin precursor layers in a vacuum furnace. The X-ray diffraction results showed that the SnS layers had orthorhombic structure and (0 4 0) preferential growth is more and more obvious with the increase of sulfurization time. The SnS film obtained by this work shows high optical absorption efficiency, and the film has a direct optical band gap of about 1.3 eV. The films show p-type conductivity and the resistivity of SnS film decreased obviously under illumination.     

Annealing effects on physical properties of doped CdTe thin films for photovoltaic applications

Polycrystalline Cadmium Telluride (CdTe) thin films were prepared on glass substrates by thermal evaporation at the chamber ambient temperature and then annealed for an hour in vacuum ~1×10⁻⁵ mbar at 400 °C. These annealed thin films were doped with copper (Cu) via ion exchange by immersing these films in Cu (NO₃)₂ solution (1 g/1000 ml) for 20 min. Further these films were again annealed at different temperatures for better diffusion of dopant species. The physical properties of an as doped sample and samples annealed at different temperatures after doping were determined by using energy dispersive x-ray analysis (EDX), x-ray diffraction (XRD), Raman spectroscopy, transmission spectra analysis, photoconductivity response and hot probe for conductivity type. The optical band gap of these thermally evaporated Cu doped CdTe thin films was determined from the transmission spectra and was found to be in the range 1.42–1.75 eV. The direct energy band gap was found annealing temperatures dependent. The absorption coefficient was >10⁴ cm⁻¹ for incident photons having energy greater than the band gap energy. Optical density was observed also dependent on postdoping annealing temperature. All samples were found having p-type conductivity. These films are strong potential candidates for photovoltaic applications like solar cells.     

Structural and optoelectronic properties of antimony tin sulphide thin films deposited by thermal evaporation techniques

Thin films of SnSb₂S₄ have been prepared on glass substrate by using thermal evaporation techniques. The films were annealed in argon gas at low pressure in sealed glass ampoules at 85 °C, 150 °C, 275 °C and 325 °C. XRD of the films reveal that the low temperature annealed films are poly crystalline while the as deposited films and high annealed films are in amorphous states. There is no adequate variation in the photoconductivity response of the amorphous and crystalline phases. The transmittance of the films is low and having no transmittance below 740 nm. The band gap calculated by ellipsometry technique is in the range of 1.82–3.1 eV. The films have n-type conductivity but the film annealed at 325 °C show p-type conductivity.     

双偶氮染料光致增色性质及光电导性研究

自Rau[1]首次报道偶氮染料具有光电导性质以来，偶氮染料一直被作为有应用价值的光电导材料而受到人们的重视[2]．特别是近年来发现，偶氮染料具有优良的光存储性能，引起了人们的极大兴趣[3]．但由于一般的偶氮染料吸收波长较短，难与目前普遍使用的激光器波长响应相匹配，从而限制了其使用．因此，如何从分子设计的角度使偶氮染料的吸收向长波方向移动，是目前国际上研究的热点[4，5]．Law等[5]合成了一些二氨基芴酮与萘酚偶合的双偶氮染料，研究了扩大萘酚萘环共轭体系时其吸收的变化情况．本文合成了几个新的双偶氮染料，研究了茶酚酸…